VISHAY IRFB13N50A Discrete Semiconductor User Guide
- May 15, 2024
- VISHAY
Table of Contents
VISHAY IRFB13N50A Discrete Semiconductor
Product Information
Specifications
- Brand: Vishay Siliconix
- Model: IRFB13N50A
- Type: Power MOSFET
- Package: TO-220AB
- Channel Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 500 V
- RDS(on): 81 ohms (VGS = 10 V)
- Maximum Gate Charge (Qg max.): 20 nC
- Total Gate Charge (Qg): 36 nC
- Configuration: Single
Features
- RoHS-compliant
- Lead (Pb)-free package available
Thermal Resistance Ratings
- Maximum junction-to-ambient: 62 °C/W
- Case-to-sink, flat, greased surface: 0.50 °C/W
- Maximum junction-to-case (drain): 0.50 °C/W
Parameter Details
For detailed parameter specifications, please refer to the user manual.
Product Usage Instructions
Installation
- Ensure proper grounding before installation.
- Mount the MOSFET securely using a 6-32 or M3 screw with the recommended torque.
Usage
- Apply the appropriate gate-source voltage within the specified range.
- Connect the drain and source terminals correctly based on your circuit requirements.
Maintenance
Regularly check for any signs of overheating or damage during operation.
FAQ
Q: Is the IRFB13N50A lead-free?
A: Yes, the IRFB13N50A is available in a lead (Pb)-free package variant.
Q: What is the maximum drain-source voltage supported by the IRFB13N50A?
A: The IRFB13N50A supports a maximum drain-source voltage of 500V.
Q: Can the IRFB13N50A be used in high-power applications?
A: Yes, the IRFB13N50A is suitable for high-power applications with its
low RDS(on) and high drain current capabilities.
PRODUCT OVERVIEW
FEATURES
- Lower gate charge Qg results in simpler drive requirements
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
This datasheet provides information about parts that are RoHS-compliant and/or
parts that are non-RoHS-compliant. For example, parts with lead (Pb)
terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supplies
- High-speed power switching
Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 500 |
|---|---|
| RDS(on) (W) | VGS = 10 V |
| Qg max. (nC) | 81 |
| Qgs (nC) | 20 |
| Qgd (nC) | 36 |
| Configuration | Single |
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRFB13N50APbF |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-source voltage | VDS | 500 | V |
| Gate-source voltage | VGS | ± 30 | |
| Continuous drain current | VGS at 10 V | TC = 25 °C | ID |
A
TC = 100 °C| 9.1
Pulsed drain current a| IDM| 56
Linear derating factor| | 2.0| W/°C
Single pulse avalanche energy b| EAS| 560| mJ
Repetitive avalanche current a| IAR| 14| A
Repetitive avalanche energy a| EAR| 25| mJ
Maximum power dissipation| TC = 25 °C| PD| 250| W
Peak diode recovery dV/dt c| dV/dt| 9.2| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a)
- ISD ≤ 14 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 0.50
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.55|
–| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 8.4 A b| –| –|
0.450| W
Forward transconductance| gfs| VDS = 50 V, ID = 8.4 A| 8.1| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 1910| –|
pF
Output capacitance| Coss| –| 290| –
Reverse transfer capacitance| Crss| –| 11| –
Output capacitance| Coss|
VGS = 0 V
| VDS = 1.0 V, f = 1.0 MHz| –| 2730| –
VDS = 400 V, f = 1.0 MHz| –| 82| –
Effective output capacitance| Coss eff.| VDS = 0 V to 400 V c| –| 160| –
Total gate charge| Qg|
VGS = 10 V
|
ID = 14 A, VDS = 400 V,
see fig. 6 and 13 b
| –| –| 81|
nC
Gate-source charge| Qgs| –| –| 20
Gate-drain charge| Qgd| –| –| 36
Turn-on delay time| td(on)|
VDD = 250 V, ID = 14 A, Rg = 7.5 W,
see fig. 10 b
| –| 15| –|
ns
Rise time| tr| –| 39| –
Turn-off delay time| td(off)| –| 39| –
Fall time| tf| –| 31| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.5| –| 2.1| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
D
showing the
integral reverse 
p – n junction diode S
| –| –| 14|
A
Pulsed diode forward current a| ISM| –| –| 56
Body diode voltage| VSD| TJ = 25 °C, IS = 14 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr|
TJ = 25 °C, IF = 14 A,
TJ = 125 °C, dI/dt = 100 A/μs b
| –| 370| 550| ns
Body diode reverse recovery charge| Qrr| –| 4.4| 6.5| μC
Body diode reverse recovery current| IRRM| –| 21| 31| A
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %
- Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91095.
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