VISHAY IRFB13N50A Discrete Semiconductor User Guide

VISHAY IRFB13N50A Discrete Semiconductor

Product Information

Specifications

• Brand: Vishay Siliconix
• Model: IRFB13N50A
• Type: Power MOSFET
• Package: TO-220AB
• Channel Type: N-Channel MOSFET
• Drain-Source Voltage (VDS): 500 V
• RDS(on): 81 ohms (VGS = 10 V)
• Maximum Gate Charge (Qg max.): 20 nC
• Total Gate Charge (Qg): 36 nC
• Configuration: Single

Features

• RoHS-compliant
• Lead (Pb)-free package available

Thermal Resistance Ratings

• Maximum junction-to-ambient: 62 °C/W
• Case-to-sink, flat, greased surface: 0.50 °C/W
• Maximum junction-to-case (drain): 0.50 °C/W

Parameter Details
For detailed parameter specifications, please refer to the user manual.

Product Usage Instructions

Installation

1. Ensure proper grounding before installation.
2. Mount the MOSFET securely using a 6-32 or M3 screw with the recommended torque.

Usage

1. Apply the appropriate gate-source voltage within the specified range.
2. Connect the drain and source terminals correctly based on your circuit requirements.

Maintenance
Regularly check for any signs of overheating or damage during operation.

FAQ

Q: Is the IRFB13N50A lead-free?
A: Yes, the IRFB13N50A is available in a lead (Pb)-free package variant.

Q: What is the maximum drain-source voltage supported by the IRFB13N50A?
A: The IRFB13N50A supports a maximum drain-source voltage of 500V.

Q: Can the IRFB13N50A be used in high-power applications?
A: Yes, the IRFB13N50A is suitable for high-power applications with its low RDS(on) and high drain current capabilities.

PRODUCT OVERVIEW

FEATURES

• Lower gate charge Qg results in simpler drive requirements
• Improved gate, avalanche, and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)
• Uninterruptible power supplies
• High-speed power switching

Power MOSFET

PRODUCT SUMMARY

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

A

TC = 100 °C| 9.1
Pulsed drain current a| IDM| 56
Linear derating factor|  | 2.0| W/°C
Single pulse avalanche energy b| EAS| 560| mJ
Repetitive avalanche current a| IAR| 14| A
Repetitive avalanche energy a| EAR| 25| mJ
Maximum power dissipation| TC = 25 °C| PD| 250| W
Peak diode recovery dV/dt c| dV/dt| 9.2| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 300
Mounting torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Starting TJ = 25 °C, L = 5.7 mH, Rg = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a)
• ISD ≤ 14 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 0.50

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.55| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 8.4 A b| –| –| 0.450| W
Forward transconductance| gfs| VDS = 50 V, ID = 8.4 A| 8.1| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1910| –|

pF

Output capacitance| Coss| –| 290| –
Reverse transfer capacitance| Crss| –| 11| –
Output capacitance| Coss|

VGS = 0 V

| VDS = 1.0 V, f = 1.0 MHz| –| 2730| –
VDS = 400 V, f = 1.0 MHz| –| 82| –
Effective output capacitance| Coss eff.| VDS = 0 V to 400 V c| –| 160| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 14 A, VDS = 400 V,

see fig. 6 and 13 b

| –| –| 81|

nC

Gate-source charge| Qgs| –| –| 20
Gate-drain charge| Qgd| –| –| 36
Turn-on delay time| td(on)|

VDD = 250 V, ID = 14 A, Rg = 7.5 W,

see fig. 10 b

| –| 15| –|

ns

Rise time| tr| –| 39| –
Turn-off delay time| td(off)| –| 39| –
Fall time| tf| –| 31| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.5| –| 2.1| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D

showing the

integral reverse                   

p – n junction diode                                                      S

| –| –| 14|

A

Pulsed diode forward current a| ISM| –| –| 56
Body diode voltage| VSD| TJ = 25 °C, IS = 14 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr|

TJ = 25 °C, IF = 14 A,

TJ = 125 °C, dI/dt = 100 A/μs b

| –| 370| 550| ns
Body diode reverse recovery charge| Qrr| –| 4.4| 6.5| μC
Body diode reverse recovery current| IRRM| –| 21| 31| A
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91095.

Disclaimer

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFB13N50A MOSFETs | Vishay

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