VISHAY IRFP21N60L Power MOSFET User Guide

VISHAY IRFP21N60L Power MOSFET

Power MOSFET

PRODUCT SUMMARY

VDS (V)| 600
RDS(on) (W)| VGS = 10 V| 0.27
Qg (max.) (nC)| 150
Qgs (nC)| 46
Qgd (nC)| 64
Configuration| Single

FEATURES

• Superfast body diode eliminates the need for external diodes in ZVS applications
• Lower gate charge results in a simple drive  requirement
• Enhanced dV/dt capabilities offer improved ruggedness
• A higher gate voltage threshold offers improved noise immunity
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

APPLICATIONS

• Zero voltage switching SMPS
• Telecom and server power supplies
• Uninterruptible power supply
• Motor control applications

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFP21N60LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage|  |  | VDS| 600| V
Gate-source voltage|  |  | VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 21|

A

TC = 100 °C| 13
Pulsed drain current a|  |  | IDM| 84
Linear derating factor|  |  |  | 2.6| W/°C
Single pulse avalanche energy b|  |  | EAS| 420| mJ
Repetitive Avalanche Currenta|  |  | IAR| 21| A
Repetitive Avalanche Energya|  |  | EAR| 33| mJ
Maximum power dissipation| TC = 25 °C| PD| 330| W
Peak diode recovery dV/dt c|  |  | dV/dt| 16| V/ns
Operating junction and storage temperature range|  |  | TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| for 10 s|  | 300d
Mounting torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Starting TJ = 25 °C, L = 1.9 mH, Rg = 25 Ω, IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a)
• ISD ≤ 21 A, dI/dt ≤ 530 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from the case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.38
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 420| –| mV/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 50| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 2.0| mA
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 13 A b| –| 0.27| 0.32| W
Forward transconductance| gfs| VDS = 50 V, ID = 13 A| 11| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 4000| –|

pF

Output capacitance| Coss| –| 340| –
Reverse transfer capacitance| Crss| –| 29| –
Output capacitance| Coss eff.| VGS = 0 V,

VDS = 0 V to 480 V c

| –| 170| –
Coss eff. (ER)| –| 130| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 21 A, VDS = 480 V

see fig. 7 and 15 b

| –| –| 150|

nC

Gate-source charge| Qgs| –| –| 46
Gate-drain charge| Qgd| –| –| 64
Gate resistance| Rg| f = 1 MHz, open drain| –| 0.63| –| W
Turn-on delay time| td(on)|

VDD = 300 V, ID = 21 A, Rg = 1.3 W, VGS = 10 V,

see fig. 11a and 11b b

| –| 20| –|

ns

Rise time| tr| –| 58| –
Turn-off delay time| td(off)| –| 33| –
Fall time| tf| –| 10| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse                     G

p – n junction diode

S

| –| –| 21|

A

Pulsed diode forward current a| ISM| –| –| 84
Body diode voltage| VSD| TJ = 25 °C, IS = 21 A, VGS = 0 V b| –| –| 1.5| V

Body diode reverse recovery time

| trr| TJ = 25 °C, IF = 21 A| –| 160| 240|

ns

TJ = 125 °C, dI/dt = 100 A/μs b| –| 400| 610

Body diode reverse recovery time

| Qrr| TJ = 25 °C, IF = 21 A, VGS = 0 V b| –| 480| 730|

nC

TJ = 125 °C, dI/dt = 100 A/μs b| –| 1540| 2310
Reverse recovery time| IRRM| TJ = 25 °C| –| 5.3| 7.9| A
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
• Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics

Fig. 2 – Typical Output Characteristics

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Output Capacitance Stored Energy vs. VDS

Fig. 7 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 – Typical Source-Drain Diode Forward Voltage

Fig. 9 – Maximum Safe Operating Area

Fig. 10 – Maximum Drain Current vs. Case Temperature

Fig. 11a – Switching Time Test Circuit

Fig. 11b – Switching Time Waveforms

Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 13 – Threshold Voltage vs. Temperature

Fig. 14a – Maximum Avalanche Energy vs. Drain Current

Fig. 14b – Unclamped Inductive Test Circuit

Fig. 14c – Unclamped Inductive Waveforms

Fig. 15a – Gate Charge Test Circuit

Fig. 15b – Basic Gate Charge Waveform

Fig. 16 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91206.

TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mould flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total over b2 and b4 dimension at the maximum material condition

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side.
4. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
8. Outline conforms to JEDEC outline TO-247 except for dimension c

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies or incompleteness contained in any datasheet or any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential or incidental damages, and (iii) any implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.

All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 01-Jan-2024 1 Document Number: 91000
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFP21N60L MOSFETs | Vishay

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