VISHAY IRFP 460 N-Channel Power Mosfet. Instruction Manual

: October 27, 2023
: VISHAY

Table of Contents

VISHAY IRFP 460 N-Channel Power Mosfet
Power MOSFET
FEATURES
DESCRIPTION
TO-247AC (High Voltage)
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRFP 460 N-Channel Power Mosfet

VISHAY -460 -Channel-Power-Mosfet-PRODUCT

Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar to but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247
Lead (Pb)-free| IRFP460PbF
SiHFP460-E3
SnPb| IRFP460
SiHFP460
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 20|

A

TC = 100 °C| 13
Pulsed Drain Currenta| IDM| 80
Linear Derating Factor| | 2.2| W/°C
Single Pulse Avalanche Energyb| EAS| 960| mJ
Repetitive Avalanche Currenta| IAR| 20| A
Repetitive Avalanche Energya| EAR| 28| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 280| W
Peak Diode Recovery dV/dtc| dV/dt| 3.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| for 10 s| | 300d
Mounting Torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from the case.
Pb containing terminations are not RoHS compliant, exemptions may apply

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 40|

°C/W

Case-to-Sink, Flat, Greased Surface| RthCS| 0.24| –
Maximum Junction-to-Case (Drain)| RthJC| –| 0.45
SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 µA| 500| –| –| V
VDS Temperature Coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.63| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 µA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero Gate Voltage Drain Current

|

IDSS

| VDS = 500 V, VGS = 0 V| –| –| 25|

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 12 Ab| –| –| 0.27| Ù
Forward Transconductance| gfs| VDS = 50 V, ID = 12 Ab| 13| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 4200| –|

pF

Output Capacitance| Coss| –| 870| –
Reverse Transfer Capacitance| Crss| –| 350| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 20 A, VDS = 400 V

see fig. 6 and 13b

| –| –| 210|

nC

Gate-Source Charge| Qgs| –| –| 29
Gate-Drain Charge| Qgd| –| –| 110
Turn-On Delay Time| td(on)|

VDD = 250 V, ID = 20 A ,

RG = 4.3 Ù, RD = 13 Ù, see fig. 10b

| –| 18| –|

ns

Rise Time| tr| –| 59| –
Turn-Off Delay Time| td(off)| –| 110| –
Fall Time| tf| –| 58| –
Internal Drain Inductance| LD| Between lead, D

6 mm (0.25″) from

package and center of G

die contact

S

| –| 5.0| –|

nH

Internal Source Inductance| LS| –| 13| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol

D

showing the

integral reverse G

p – n junction diode

S

| –| –| 20|

A

Pulsed Diode Forward Currenta| ISM| –| –| 80
Body Diode Voltage| VSD| TJ = 25 °C, IS = 20 A, VGS = 0 Vb| –| –| 1.8| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 20A, dI/dt = 100 A/µsb| –| 570| 860| ns
Body Diode Reverse Recovery Charge| Qrr| –| 5.7| 8.6| µC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Peak Diode Recovery DV/DT Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91237.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|

Notes

Package reference: JEDEC® TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at the maximum material condition

VERSION 2: FACILITY CODE = Y

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
The contour of slot optional
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

Disclaimer

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