VISHAY IRF630 Power Mosfet User Guide

VISHAY IRF630 Power Mosfet

Power MOSFET

PRODUCT SUMMARY

VDS (V)| 200
RDS(on) (Ù)| VGS = 10 V| 0.40
Qg max. (nC)| 43
Qgs (nC)| 7.0
Qgd (nC)| 23
Configuration| Single

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF630PbF
Lead (Pb)-free and halogen-free| IRF630PbF-BE3

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 9.0| A
TC = 100 °C| 5.7
Pulsed drain current a| IDM| 36
Linear derating factor| | 0.59| W/°C
Single pulse avalanche energy b| EAS| 250| mJ
Repetitive avalanche current a| IAR| 9.0| A
Repetitive avalanche energy a| EAR| 7.4| mJ
Maximum power dissipation| TC = 25 °C| PD| 74| W
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 Ω, IAS = 9.0 A (see fig. 12)
c. ISD ≤ 9.0 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.7

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 200| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.24| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 200 V, VGS = 0 V| –| –| 25| μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 5.4 A b| –| –| 0.40| Ù
Forward transconductance| gfs| VDS = 50 V, ID = 5.4 A| 3.8| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5| –| 800| –| pF
Output capacitance| Coss| –| 240| –
Reverse transfer capacitance| Crss| –| 76| –
Total gate charge| Qg| VGS = 10 V| ID = 5.9 A, VDS = 160 V, see fig. 6 and 13 b| –| –| 43| nC
Gate-source charge| Qgs| –| –| 7.0
Gate-drain charge| Qgd| –| –| 23
Turn-on delay time| td(on)| VDD = 100 V, ID = 5.9 A, Rg = 12 Ù, RD = 16 Ù, see fig. 10 b| –| 9.4| –| ns
Rise time| tr| –| 28| –
Turn-off delay time| td(off)| –| 39| –
Fall time| tf| –| 20| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 3.3| Ù
Internal drain inductance| LD| Between lead, D 6 mm (0.25″) from package and center of G die contact
| –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D showing the integral reverse G p – n junction diode
| –| –| 9.0| A
Pulsed diode forward current a| ISM| –| –| 36
Body diode voltage| VSD| TJ = 25 °C, IS = 9.0 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/ms| –| 170| 340| ns
Body diode reverse recovery charge| Qrr| –| 1.1| 2.2| nC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

• Fig. 1 – Typical Output Characteristics, TC = 25 °C
  
  

• Fig. 2 – Typical Output Characteristics, TC = 150 °C
  

• Fig. 3 – Typical Transfer Characteristics
  
  

• Fig. 4 – Normalized On-Resistance vs. Temperature
  

• Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
  

• Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
  

• Fig. 7 – Typical Source-Drain Diode Forward Voltage
  

• Fig. 8 – Maximum Safe Operating Area
  

• Fig. 9 – Maximum Drain Current vs. Case Temperature
  

• Fig. 10a – Switching Time Test Circuit
  

• Fig. 10b – Switching Time Waveforms
  

• Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
  

• Fig. 12a – Unclamped Inductive Test Circuit Fig.
  
  

• 12b – Unclamped Inductive Waveforms
  

• Fig. 12c – Maximum Avalanche Energy vs. Drain Current
  

• Fig. 13a – Basic Gate Charge Waveform
  
  

• Fig. 13b – Gate Charge Test Circuit
  

• Peak Diode Recovery dV/dt Test Circuit
  
  ① Driver gate drive
  Fig. 14 – For N-Channel
  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91031.

CUSTOMERS SUPPORT

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF630 MOSFETs | Vishay

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