VISHAY IRF630 Power Mosfet User Guide

: May 15, 2024
: VISHAY

Table of Contents

Power MOSFET
FEATURES
DESCRIPTION
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
SPECIFICATIONS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
CUSTOMERS SUPPORT
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRF630 Power Mosfet

VISHAY IRF630 Power Mosfet

Power MOSFET

Power Mosfet

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF630PbF
Lead (Pb)-free and halogen-free| IRF630PbF-BE3

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 9.0| A
TC = 100 °C| 5.7
Pulsed drain current a| IDM| 36
Linear derating factor| | 0.59| W/°C
Single pulse avalanche energy b| EAS| 250| mJ
Repetitive avalanche current a| IAR| 9.0| A
Repetitive avalanche energy a| EAR| 7.4| mJ
Maximum power dissipation| TC = 25 °C| PD| 74| W
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 Ω, IAS = 9.0 A (see fig. 12)
c. ISD ≤ 9.0 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.7

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 200| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.24| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 200 V, VGS = 0 V| –| –| 25| μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 5.4 A b| –| –| 0.40| Ù
Forward transconductance| gfs| VDS = 50 V, ID = 5.4 A| 3.8| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5| –| 800| –| pF
Output capacitance| Coss| –| 240| –
Reverse transfer capacitance| Crss| –| 76| –
Total gate charge| Qg| VGS = 10 V| ID = 5.9 A, VDS = 160 V, see fig. 6 and 13 b| –| –| 43| nC
Gate-source charge| Qgs| –| –| 7.0
Gate-drain charge| Qgd| –| –| 23
Turn-on delay time| td(on)| VDD = 100 V, ID = 5.9 A, Rg = 12 Ù, RD = 16 Ù, see fig. 10 b| –| 9.4| –| ns
Rise time| tr| –| 28| –
Turn-off delay time| td(off)| –| 39| –
Fall time| tf| –| 20| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 3.3| Ù
Internal drain inductance| LD| Between lead, D 6 mm (0.25″) from package and center of G die contact
| –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D showing the integral reverse G p – n junction diode
| –| –| 9.0| A
Pulsed diode forward current a| ISM| –| –| 36
Body diode voltage| VSD| TJ = 25 °C, IS = 9.0 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/ms| –| 170| 340| ns
Body diode reverse recovery charge| Qrr| –| 1.1| 2.2| nC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C
Fig. 2 – Typical Output Characteristics, TC = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a – Unclamped Inductive Test Circuit Fig.
12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit

① Driver gate drive
Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91031.

CUSTOMERS SUPPORT

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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