VISHAY IRF840LC Power MOSFET Owner’s Manual
- May 15, 2024
- VISHAY
Table of Contents
Vishay Intertechnology: Passives & Discrete
Semiconductors
www.vishay.com
IRF840LC
Vishay Siliconix
Power MOSFET
IRF840LC Power MOSFET
PRODUCT SUMMARY
VDS (V)| 500
RDS(on) (Ω)| VGS = 10 V| 0.85
Qg max. (nC)| 39
Qgs (nC)| 10
Qgd (nC)| 19
Configuration| Single
FEATURES
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V V rating
- Reduced C iss , C oss , C rss
- Extremely high frequency operation
- Repetitive avalanche rated
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
This new series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRF840LCPbF
Lead (Pb)-free and halogen-free| IRF840LCPbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 8.0| A
TC = 100 °C| 5.1
Pulsed drain current a| IDM| 28
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 510| mJ
Repetitive avalanche current a| IAR| 8.0| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dV/dt c| dV/dt| 3.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. Vpp = 50 V, starting Ty = 25 °C, L = 14 mH, Rg = 25 Ω, lag = 8.0 A (See
fig. 12)
c. Isp < 8.0 A, dl/dt < 100 A/us, Vop < Vos, Ty < 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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locations. Reliability data for Silicon Technology and Package Reliability
represent a composite of all qualified locations. For related documents such
as package/tape drawings, part marking, and reliability data, see
www.vishay.com/ppg?91067.
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Revision: 01-Jan-2024
Document Number: 91000
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References
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