VISHAY Si9407BDY P Channel 60 V D-S MOSFET User Manual

VISHAY Si9407BDY P Channel 60 V D-S MOSFET

FEATURES

• TrenchFET® power MOSFET
• 100 % UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

SO-8 Single

APPLICATIONS

• Primary side switch.

PRODUCT SUMMARY

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C, unless otherwise noted)

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYPICAL| MAXIMUM| UNIT
Maximum junction-to-ambient b, d| RthJA| 42| 53| °C/W
Maximum junction-to-foot (drain)| Steady state| RthJF| 19| 25

Notes

• a. Based on TC = 25 °C
• b. Surface mounted on 1″ x 1″ FR4 board
• c. t = 10 s
• d. Maximum under steady state conditions is 85 °C/W

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -60| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = -250 μA| –| -50| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| 4| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -1| –| -3| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -60 V, VGS = 0 V| –| –| -1| μA
VDS = -60 V, VGS = 0 V, TJ = 55 °C| –| –| -10
On-state drain current a| ID(on)| VDS ³ -5 V, VGS = -10 V| -20| –| –| A
Drain-source on-state resistance a| RDS(on)| VGS = -10 V, ID = -3.2 A| –| 0.100| 0.120| W
VGS = -4.5 V, ID = -2.9 A| –| 0.126| 0.150
Forward transconductance a| gfs| VDS = -15 V, ID = -3.2 A| –| 8.5| –| S
Dynamic b
Input capacitance| Ciss| VDS = -30 V, VGS = 0 V, f = 1 MHz| –| 600| –| pF
Output capacitance| Coss| –| 70| –
Reverse transfer capacitance| Crss| –| 50| –
Total gate charge| Qg| VDS = -30 V, VGS = -10 V, ID = -3.2 A| –| 14.5| 22| nC
VDS = -30 V, VGS = -4.5 V, ID = -3.9 A| –| 8| 12
Gate-source charge| Qgs| –| 2.2| –
Gate-drain charge| Qgd| –| 3.7| –
Gate resistance| Rg| f = 1 MHz| –| 14| –| W
Turn-on delay time| td(on)| VDD = -30 V, RL = 11.5 W
ID @ -2.6 A, VGEN = -4.5 V, Rg = 1 W| –| 30| 45| ns
Rise time| tr| –| 70| 105
Turn-off delay time| td(off)| –| 40| 60
Fall time| tf| –| 30| 45
Turn-on delay time| td(on)| VDD = -30 V, RL = 11.5 W
ID @ -2.6 A, VGEN = -10 V, Rg = 1 W| –| 10| 15| ns
Rise time| tr| –| 13| 20
Turn-off delay time| td(off)| –| 35| 55
Fall time| tf| –| 30| 45
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| -4.2| A
Pulse diode forward current| ISM| | –| –| -20
Body diode voltage| VSD| IS = -2 A, VGS = 0 V| –| -0.8| -1.2| V
Body diode reverse recovery time| trr| IF = -2 A, di/dt = -100 A/μs, TJ = 25 °C| –| 30| 50| ns
Body diode reverse recovery charge| Qrr| –| 35| 60| nC
Reverse recovery fall time| ta| –| 16| –| ns
Reverse recovery rise time| tb| –| 14| –

Notes

• a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
• b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

• Output Characteristics
  

• On-Resistance vs. Drain Current
  

• Gate Charge
  

• Transfer Characteristics
  

• Capacitance
  

• On-Resistance vs. Junction Temperature
  

• Source-Drain Diode Forward Voltage
  

• Threshold Voltage
  

• On-Resistance vs. Gate-to-Source Voltage
  

• Single Pulse Power, Junction-to-Ambient
  

• Safe Operating Area
  

• Current Derating a
  

• Power Derating
  

Note

a. The power dissipation PD is based on TJ max = 150 °C, using junction- to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

• Normalized Thermal Transient Impedance, Junction-to-Ambient
  

• Normalized Thermal Transient Impedance, Junction-to-Foot
  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69902.

SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

RECOMMENDED MINIMUM PADS FOR SO-8

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• Si7309DN MOSFETs | Vishay

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