VISHAY IRF720 Power MOSFET Owner’s Manual
- May 15, 2024
- VISHAY
Table of Contents
Vishay Intertechnology: Passives& Discrete
Semiconductors
www.vishay.com
IRF720
Vishay Siliconix
Power MOSFET
IRF720 Power MOSFET
PRODUCT SUMMARY
VDS (V)| 400 V
RDS(on) (Ω)| VGS = 10 V| 1.8
Qg max. (nC)| 20
Qgs (nC)| 3.3
Qgd (nC)| 11
Configuration| Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRF720PbF
Lead (Pb)-free and halogen-free| IRF720PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 400| V
Gate-source voltage| VGS| ± 20| V
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 3.3| A
TC = 100 °C| 2.1
Pulsed drain current a| IDM| 13
Linear derating factor| | 0.40| W/°C
Single pulse avalanche energy b| EAS| 190| mJ
Repetitive avalanche current a| IAR| 3.3| A
Repetitive avalanche energy a| EAR| 5.0| mJ
Maximum power dissipation| TC = 25 °C| PD| 50| W
Peak diode recovery dV/dt c| dV/dt| 4.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. Vpp = 50 V, starting Ty = 25 °C, L = 30 mH, Rg = 25 Ω, las = 3.3 A (See
fig. 12)
c. Isp ≤3.3 A, dl/dt ≤ 65 A/us, Vpp ≤ Vps, Ty ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 2.5
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide
manufacturing capability. Products may be manufactured at one of several
qualified locations. Reliability data for Silicon Technology and Package
Reliability represent a composite of all qualified locations. For related
documents such as package/tape drawings, part marking, and reliability data,
see www.vishay.com/ppg?91043.
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Revision: 01-Jan-2024
Document Number: 91000
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