VISHAY IRL520PbF-BE3 Power Mosfet User Guide

May 15, 2024
VISHAY

VISHAY IRL520PbF-BE3 Power Mosfet User Guide

www.vishay.com

IRL520
Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

FEATURES

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Logic-level gate drive
  • RDS(on) specified at VGS = 4 V and 5 V
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

Specifications

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Figure 1-4

Figure 5-8

Figure 9-11

Figure 12

Figure 13

Figure 14

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, seewww.vishay.com/ppg?91298.

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2024

Document Number: 91000

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

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