VISHAY SUM70030M Discrete Semiconductor User Guide
- May 15, 2024
- VISHAY
Table of Contents
VISHAY SUM70030M Discrete Semiconductor
Specifications:
- Brand: Vishay Siliconix
- Type: N-Channel MOSFET
- Voltage Rating: 100V
- RDS(on) at VGS = 10V: 0.0035Ω
- RDS(on) at VGS = 7.5V: 0.0037Ω
- Gate Charge (Qg): 142.4nC (typical)
- Continuous Drain Current (ID): 150A
Product Overview:
The Vishay Siliconix N-Channel MOSFET is a high-performance semiconductor device designed for various applications requiring efficient power management and switching capabilities.
Features:
- Low RDS(on) for high efficiency
- High continuous drain current capability
- Fast switching speed
- Package is lead (Pb)-free and halogen-free
Applications:
Commonly used in applications such as power supplies, motor control, lighting
systems, and other electronic circuits requiring high-power switching.
Usage Instructions
Installation:
- Ensure proper heat dissipation by mounting the MOSFET on a suitable PCB material.
- Connect the drain, gate, and source terminals to the corresponding components in your circuit.
- Observe correct polarity and voltage ratings during installation.
Operation:
- Apply the appropriate gate-source voltage within the specified range for optimal performance.
- Avoid exceeding the maximum drain-source voltage to prevent damage to the MOSFET.
- Monitor the continuous drain current to stay within the rated limits.
Frequently Asked Questions (FAQ):
Q: What is the maximum drain-source voltage rating of the MOSFET?
A: The maximum drain-source voltage rating is 100V.
Q: Can this MOSFET be used in high-power applications?
A: Yes, this MOSFET is designed for high-power applications with a
continuous drain current rating of 150A.
N-Channel 100 V (D-S) MOSFET
PRODUCT OVERVIEW
FEATURES
- TrenchFET® power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing through Vplateau
- 100 % Rg and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Power supply – Secondary synchronous rectification
- DC/DC converter
- Power tools
- Motor drive switch
- DC/AC inverter
- Battery management
- OR-ing / e-fuse
PRODUCT SUMMARY
| VDS (V) | 100 |
|---|---|
| RDS(on) max. (W) at VGS = 10 V | 0.0035 |
| RDS(on) max. (W) at VGS = 7.5 V | 0.0037 |
| Qg typ. (nC) | 142.4 |
| ID (A) d | 150 |
| Configuration | Single |
ORDERING INFORMATION
| Package | D2PAK (TO-263-7L) |
|---|---|
| Lead (Pb)-free and halogen-free | SUM70030M-GE3 |
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-source voltage | VDS | 100 | V |
| Gate-source voltage | VGS | ± 20 | |
| Continuous drain current (TJ = 150 °C) | TC = 25 °C | ID | 150 d |
A
TC = 70 °C| 150 d
Pulsed drain current (t = 100 μs)| IDM| 500
Avalanche current| IAS| 60
Single avalanche energy a| L = 0.1 mH| EAS| 180| mJ
Maximum power dissipation a| TC = 25 °C| PD| 375 b| W
TC = 125 °C| 125 b
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| LIMIT| UNIT
Junction-to-ambient (PCB mount) c| RthJA| 40| °C/W
Junction-to-case (drain)| RthJC| 0.4
Notes
- Duty cycle 1 %
- See SOA curve for voltage derating
- When mounted on 1″ square PCB (FR4 material)
- Package limited
SPECIFICATIONS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 100| –| –| V
Gate threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2| –| 4
Gate-body leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 250| nA
Zero gate voltage drain current
|
IDSS
| VDS = 100 V, VGS = 0 V| –| –| 1| μA
VDS = 100 V, VGS = 0 V, TJ = 125 °C| –| –| 150
VDS = 100 V, VGS = 0 V, TJ = 175 °C| –| –| 5| mA
On-state drain current a| ID(on)| VDS ³ 10 V, VGS = 10 V| 120| –| –| A
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 30 A| –| 0.0029|
0.0035| W
VGS = 7.5 V, ID = 20 A| –| 0.0031| 0.0037
Forward transconductance a| gfs| VDS = 15 V, ID = 30 A| –| 110| –| S
Dynamic b
Input capacitance| Ciss|
VGS = 0 V, VDS = 50 V, f = 1 MHz
| –| 10 870| –|
pF
Output capacitance| Coss| –| 820| –
Reverse transfer capacitance| Crss| –| 40| –
Total gate charge c| Qg|
VDS = 50 V, VGS = 10 V, ID = 20 A
| –| 142.4| 214|
nC
Gate-source charge c| Qgs| –| 46.8| –
Gate-drain charge c| Qgd| –| 18.5| –
Output charge| Qoss| VDS = 50 V, VGS = 0 V| –| 138| 207
Gate resistance| Rg| f = 1 MHz| 0.34| 1.7| 3.4| W
Turn-on delay time c| td(on)|
VDD = 50 V, RL = 3 W
ID @ 10 A, VGEN = 10 V, Rg = 1 W
| –| 30| 60|
ns
Rise time c| tr| –| 13| 26
Turn-off delay time c| td(off)| –| 50| 100
Fall time c| tf| –| 15| 30
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed current (t = 100 μs)| ISM| | –| –| 250| A
Forward voltage a| VSD| IF = 10 A, VGS = 0 V| –| 0.8| 1.5| V
Reverse recovery time| trr|
IF = 34 A, di/dt = 100 A/μs
| –| 76| 150| ns
Peak reverse recovery charge| IRM(REC)| –| 4.6| 5.6| A
Reverse recovery charge| Qrr| –| 0.205| 0.24| μC
Reverse recovery fall time| ta| –| 52| –| ns
Reverse recovery rise time| tb| –| 24| –
Notes
- Pulse test; pulse width 300 μs, duty cycle 2 %
- Guaranteed by design, not subject to production testing
- Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
- The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions
- Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77104.
D2PAK (TO-263-7L) Case Outline
Notes
- Plane B includes maximum features of heat sink tab and plastic
- No more than 25 % of L1 can fall above seating plane by max. 8 mils
- Pin to pin coplanarity max. 4 mils
- Lead thickness 25 mils
- For SUM part numbers lead thickness is 24 mils to 29 mils
- For reference only
- Use inches as the primary measurement
- This feature is only for SUM
DIM.
| INCHES| MILLIMETERS
---|---|---
MIN.| MAX.| MIN.| MAX.
A| 0.160| 0.190| 4.064| 4.826
b| 0.020| 0.039| 0.508| 0.990
b1| 0.020| 0.035| 0.508| 0.889
c SUB| 0.012| 0.018| 0.305| 0.457
c SUM| 0.022| 0.028| 0.559| 0.711
c1| 0.018| 0.025| 0.457| 0.635
c2| 0.045| 0.055| 1.143| 1.397
D| 0.340| 0.380| 8.636| 9.652
D1| 0.260| 0.280| 6.604| 7.112
D2| 0.046| 0.050| 1.168| 1.270
D3| 0.045| 0.055| 1.143| 1.397
E| 0.380| 0.410| 9.652| 10.414
E1| 0.245| –| 6.223| –
E2| 0.072| 0.078| 1.829| 1.981
e| 0.050 BSC| 1.27 BSC
K| 0.045| 0.055| 1.143| 1.397
L| 0.575| 0.625| 14.605| 15.875
L1| 0.090| 0.110| 2.286| 2.794
L2| 0.040| 0.055| 1.016| 1.397
L3| 0.050| 0.070| 1.270| 1.778
L4| 0.010 BSC| 0.254 BSC
M| –| 0.002| –| 0.050
ECN: T22-0410-Rev. D, 19-Sep-2022 DWG: 6006
Recommended
Recommended Land Pattern D2PAK (TO-263-7L)
Disclaimer
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References
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