VISHAY IRF840AS Power MOSFET Owner’s Manual
- May 15, 2024
- VISHAY
Table of Contents
VISHAY IRF840AS Power MOSFET
Specifications:
- Product Name: IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
- Manufacturer: Vishay Siliconix
- Power MOSFET
- Package: I2PAK (TO-262), D2PAK (TO-263)
- N-Channel MOSFET
- Drain-Source Voltage (VDS): 500V
- On-State Resistance (RDS(on)): 38Ω (VGS = 10V)
- Total Gate Charge (Qg max.): 9.0nC
Features
For detailed features, please refer to
www.vishay.com/doc?99912
Applications
Typical applications include SMPS topologies.
Ordering Information
For ordering information, refer to the provided package codes.|
Thermal Resistance Ratings
- Maximum Junction-to-Ambient: 40°C/W
- Maximum Junction-to-Case: 1.0°C/W
Parameter Tests
Refer to the provided parameter symbols for specific test conditions and
values.
FAQ
-
What are the typical applications of these MOSFETs?
The typical applications include SMPS topologies. -
Are these MOSFETs RoHS-compliant?
The datasheet provides information about parts that are RoHS-compliant and non RoHS-compliant. Parts with lead (Pb) terminations are not RoHS-compliant. -
Where can I find detailed features of the product?
You can find detailed features atwww.vishay.com/doc?99912.
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
PRODUCT SUMMARY
VDS (V)| 500
RDS(on) (Ù)| VGS = 10 V| 0.85
Qg max. (nC)| 38
Qgs (nC)| 9.0
Qgd (nC)| 18
Configuration| Single
Power MOSFET
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Effective Coss specified
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
High speed power switching
TYPICAL SMPS TOPOLOGIES
- Two transistor forward
- Half bridge
- Full bridge
ORDERING INFORMATION
Package| D2PAK (TO-263)| D2PAK (TO-263)| D2PAK (TO-263)| I2PAK (TO-262)
Lead (Pb)-free and Halogen-free| SiHF840AS-GE3| SiHF840ASTRL-GE3 a|
SiHF840ASTRR-GE3 a| SiHF840AL-GE3 a
Lead (Pb)-free| IRF840ASPbF| IRF840ASTRLPbF a| IRF840ASTRRPbF a| IRF840ALPbF
Note
See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500| V
Gate-Source Voltage| VGS| ± 30
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 8.0|
A
TC = 100 °C| 5.1
Pulsed Drain Current a| IDM| 32
Linear Derating Factor| | 1.0| W/°C
Single Pulse Avalanche Energy b| EAS| 510| mJ
Repetitive Avalanche Current a| IAR| 8.0| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
TA = 25 °C| 3.1
Peak Diode Recovery dV/dt c, e| dV/dt| 5.0| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Temperature d| for 10 s| | 300
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
- ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
- Uses IRF840A, SiH840A data and test conditions
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient (PCB mount)a| RthJA| –| –| 40|
°C/W
Maximum Junction-to-Case (Drain)| RthJC| –| –| 1.0
Note
When mounted on 1″ square PCB (FR-4 or G-10 material)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0, ID = 250 μA| 500| –| –| V
VDS Temperature Coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA d| –|
0.58| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 4.8 A b| –| –|
0.85| Ù
Forward Transconductance| gfs| VDS = 50 V, ID = 4.8 A| 3.7| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 1018| –|
pF
Output Capacitance| Coss| –| 155| –
Reverse Transfer Capacitance| Crss| –| 8.0| –
Output Capacitance| Coss|
VGS = 0 V
| VDS = 1.0 V, f = 1.0 MHz| | 1490|
Output Capacitance| Coss| VDS = 400 V, f = 1.0 MHz| | 42|
Effective Output Capacitance| Coss eff.| VDS = 0 V to 480 V c, d| | 56|
Total Gate Charge| Qg|
VGS = 10 V
|
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13 b, d
| –| –| 38|
nC
Gate-Source Charge| Qgs| –| –| 9.0
Gate-Drain Charge| Qgd| –| –| 18
Turn-On Delay Time| td(on)|
VDD = 250 V, ID = 8.0 A,
Rg = 9.1 Ù, RD = 31 Ù, see fig. 10 b, d
| –| 11| –|
ns
Rise Time| tr| –| 23| –
Turn-Off Delay Time| td(off)| –| 26| –
Fall Time| tf| –| 19| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.7| –| 3.7| Ù
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol D showing the
integral reverse G
p – n junction diode S
| –| –| 8.0|
A
Pulsed Diode Forward Current a| ISM| –| –| 32
Body Diode Voltage| VSD| TJ = 25 °C, IS = 8.0 A, VGS = 0 V b| –| –| 2.0| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 8.0 A, dI/dt = 100
A/μs b| –| 422| 633| ns
Body Diode Reverse Recovery Charge| Qrr| –| 2.0| 3.0| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width £ 300 μs; duty cycle £ 2 %
- Coss is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 %to 80 % VDS
- Uses IRF840A, SiHF840A data and test conditions
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TO-263AB (HIGH VOLTAGE)
| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.|
MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970
Notes
- Dimensioning and tolerancing per ASME 5M-1994.
- Dimensions are shown in millimeters (inches).
- Dimension D and E do not include mold Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
- Thermal PAD contour optional within dimension E, L1, D1 and
- Dimension b1 and c1 apply to base metal
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
I2PAK (TO-262) (HIGH VOLTAGE)
| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.|
MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D| 8.38| 9.65| 0.330| 0.380
A1| 2.03| 3.02| 0.080| 0.119| D1| 6.86| –| 0.270| –
b| 0.51| 0.99| 0.020| 0.039| E| 9.65| 10.67| 0.380| 0.420
b1| 0.51| 0.89| 0.020| 0.035| E1| 6.22| –| 0.245| –
b2| 1.14| 1.78| 0.045| 0.070| e| 2.54 BSC| 0.100 BSC
b3| 1.14| 1.73| 0.045| 0.068| L| 13.46| 14.10| 0.530| 0.555
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.065
c1| 0.38| 0.58| 0.015| 0.023| L2| 3.56| 3.71| 0.140| 0.146
c2| 1.14| 1.65| 0.045| 0.065|
ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977
Notes
- Dimensioning and tolerancing per ASME 5M-1994.
- Dimension D and E do not include mold Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
- Thermal pad contour optional within dimension E, L1, D1, and E1.
- Dimension b1 and c1 apply to base metal
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Disclaimer
-
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability. -
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. -
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
-
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED
HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
References
- Vishay Intertechnology: Passives & Discrete Semiconductors
- IRF840AS, SiHF840AS, IRF840AL, SiHF840AL MOSFETs | Vishay
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>