VISHAY IRFR420 Power MOSFET Owner’s Manual

VISHAY IRFR420 Power MOSFET

Specifications

• Manufacturer: Vishay Siliconix
• Product: IRFR420, IRFU420, SiHFR420, SiHFU420 Power MOSFET
• Package: DPAK (TO-252), IPAK (TO-251)
• N-Channel MOSFET
• Drain-Source Voltage (VDS): 500V
• RDS(on): 3.0 Ohms (VGS = 10V)
• Maximum Gate Charge (Qg): 19nC
• Gate-Source Charge (Qgs): 3.3nC
• Gate-Drain Charge (Qgd): 13nC

Product Description

The IRFR420, IRFU420, SiHFR420, SiHFU420 Power MOSFET from Vishay Siliconix is a third-generation power MOSFET designed to offer fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK package is suitable for surface mounting techniques like vapor phase, infrared, or wave soldering, while the straight lead version is ideal for through-hole mounting applications.

Ordering Information

The product is available in lead (Pb)-free and halogen-free versions. Different part numbers are specified for various package types.

Thermal Resistance Ratings

• Maximum Junction-to-Ambient: 110°C/W (Typical)
• Maximum Junction-to-Case (Drain): 3.0°C/W (Max)

Parameter Details

• Drain-Source Breakdown Voltage: 500V
• Gate-Source Threshold Voltage: 4.0V (Max)
• On-State Resistance: 0.59 Ohms (Typical)

Product Usage Instructions

Mounting

The DPAK package is suitable for surface mounting using vapor phase, infrared, or wave soldering techniques. Ensure proper alignment and soldering to the designated pads on the PCB.

Electrical Connections

Connect the gate, drain, and source pins of the MOSFET according to the circuit diagram or application requirements. Ensure proper insulation and avoid short circuits.

Operating Conditions

Operate the MOSFET within the specified voltage and current ratings mentioned in the datasheet. Monitor temperature levels to prevent overheating.

FAQ

Q: Can I use this MOSFET for high-power applications?

A: Yes, the IRFR420, IRFU420, SiHFR420, SiHFU420 Power MOSFET can handle power dissipation levels up to 1.5W in typical surface-mount applications.

Q: What soldering recommendations should I follow?

A: For peak temperature soldering, maintain the temperature at 260°C for a maximum duration of 10 seconds.

N-Channel MOSFET

PRODUCT SUMMARY

VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 3.0
Qg max. (nC)| 19
Qgs (nC)| 3.3
Qgd (nC)| 13
Configuration| Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR420, SiHFR420)
• Straight lead (IRFU420, SiHFU420)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straigh t lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

ORDERING INFORMATION

ORDERING INFORMATION

Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK (TO-251)
Lead (Pb)-free and halogen-free| SiHFR420-GE3| SiHFR420TR-GE3 a| SiHFR420TRL- GE3 a| SiHFR420TRR-GE3 a| SiHFU420-GE3
IRFR420PbF-BE3| IRFR420TRPbF-BE3| IRFR420TRLPbF-BE3| –| –
Lead (Pb)-free| IRFR420PbF| IRFR420TRPbF a| IRFR420TRLPbF a| IRFR420TRRPbF a| IRFU420PbF

Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 2.4|

A

TC = 100 °C| 1.5
Pulsed drain current a| IDM| 8.0
Linear derating factor| | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 400| mJ
Repetitive avalanche current a| IAR| 2.4| A
Repetitive avalanche energy a| EAR| 4.2| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 3.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 260

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 Ω, IAS = 2.4 A (see fig. 12)
• c. ISD ≤ 2.4 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• d. 1.6 mm from case
• e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 110|

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| 50
Maximum junction-to-case (drain)| RthJC| –| 3.0

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.59| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID =1.4 A b| –| –| 3.0| W
Forward transconductance| gfs| VDS = 50 V, ID = 1.4 A| 1.5| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 360| –|

pF

Output capacitance| Coss| –| 92| –
Reverse transfer capacitance| Crss| –| 37| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 2.1 A, VDS = 400 V,

see fig. 6 and 13 b

| –| –| 19|

nC

Gate-source charge| Qgs| –| –| 3.3
Gate-drain charge| Qgd| –| –| 13
Turn-on delay time| td(on)|

VDD = 250 V, ID = 2.1 A,

Rg = 18 W, RD = 120 W, see fig. 10 b

| –| 8.0| –|

ns

Rise time| tr| –| 8.6| –
Turn-off delay time| td(off)| –| 33| –
Fall time| tf| –| 16| –
Gate input resistance| Rg| f = 1 MHz, open drain| 1.8| –| 12.6| W
Internal drain inductance| LD| Between lead,                           D

6 mm (0.25″) from package and center of die contact

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

showing the

integral reverse

p – n junction diode

| –| –| 2.4|

A

Pulsed diode forward current a| ISM| –| –| 8.0
Body diode voltage| VSD| TJ = 25 °C, IS = 2.4 A, VGS = 0 V b| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs b| –| 260| 520| ns
Body diode reverse recovery charge| Qrr| –| 0.70| 1.4| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Package Information

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

VERSION 2: FACILITY CODE = N

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.39
A1| –| 0.13
b| 0.65| 0.89
b1| 0.64| 0.79
b2| 0.76| 1.13
b3| 4.95| 5.46
c| 0.46| 0.61
c1| 0.41| 0.56
c2| 0.46| 0.60
D| 5.97| 6.22
D1| 5.21| –
E| 6.35| 6.73
E1| 4.32| –
e| 2.29 BSC
H| 9.94| 10.34
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
L| 1.50| 1.78
L1| 2.74 ref.
L2| 0.51 BSC
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.14| 1.49
L6| 0.65| 0.85
q| 0°| 10°
q1| 0°| 15°
q2| 25°| 35°

Notes

• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION 1:

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 2.18| 2.39| 0.086| 0.094| D1| 5.21| –| 0.205| –
A1| 0.89| 1.14| 0.035| 0.045| E| 6.35| 6.73| 0.250| 0.265
b| 0.64| 0.89| 0.025| 0.035| E1| 4.32| –| 0.170| –
b1| 0.65| 0.79| 0.026| 0.031| e| 2.29 BSC| 2.29 BSC
b2| 0.76| 1.14| 0.030| 0.045| L| 8.89| 9.65| 0.350| 0.380
b3| 0.76| 1.04| 0.030| 0.041| L1| 1.91| 2.29| 0.075| 0.090
b4| 4.95| 5.46| 0.195| 0.215| L2| 0.89| 1.27| 0.035| 0.050
c| 0.46| 0.61| 0.018| 0.024| L3| 1.14| 1.52| 0.045| 0.060
c1| 0.41| 0.56| 0.016| 0.022| q1| 0′| 15′| 0′| 15′
c2| 0.46| 0.86| 0.018| 0.034| q2| 25′| 35′| 25′| 35′
D| 5.97| 6.22| 0.235| 0.245|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension are shown in inches and millimeters
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

DIM.| MIN.| NOM.| MAX.| | DIM.| MIN.| NOM.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimension are in millimeters, angles are in degrees
• Heat sink side flash is max. 0.8 mm

Application Note 826

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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