VISHAY IRF720S Power MOSFET Owner’s Manual

VISHAY IRF720S Power MOSFET

Product Information

Specifications

• Manufacturer: Vishay Siliconix
• Product Names: IRF720S, SiHF720S, IRF720L, SiHF720L
• Package Types: I2PAK (TO-262), D2PAK (TO-263)
• Channel Type: N-Channel MOSFET
• Drain-Source Voltage (VDS): 400V
• RDS(on): 1.8 ohms (at VGS = 10V)
• Maximum Gate Charge (Qg): 20nC
• Configuration: Single

Description
Third generation power MOSFETs from Vishay provide fast switching, rugged design, low on-resistance, and cost-effectiveness. The D2PAK (TO-263) package offers high power
capability and low on-resistance, suitable for high current applications.

Thermal Resistance Ratings

• Maximum Junction-to-Ambient: 62°C/W (Typical)
• Maximum Junction-to-Case (Drain): 2.5°C/W (Max)

Product Usage Instructions

Ordering Information
To order, refer to the part numbers listed below:

Parameter Details
Some key parameters include:

• Drain-Source Breakdown Voltage: VDS
• Gate-Source Threshold Voltage: VGS(th)
• Drain-Source On-State Resistance: RDS(on)

Frequently Asked Questions (FAQ)

1. Q: Are the listed parts RoHS-compliant?
   A: The datasheet provides information on RoHS-compliant and non-RoHS- compliant parts. Check the datasheet for specific details.

2. Q: What is the maximum power dissipation of the MOSFET?
   A: The MOSFET can dissipate up to 2.0W in a typical surface-mount application.

3. Q: What is the recommended operating temperature range?
   A: The operating junction and storage temperature range is -55 to +150°C.

PRODUCT SUMMARY

VDS (V)| 400
RDS(on) (W)| VGS = 10 V| 1.8
Qg max. (nC)| 20
Qgs (nC)| 3.3
Qgd (nC)| 11
Configuration| Single

FEATURES

• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are  RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and ca n dissipate up to 2.0 W in a typical surface- mount application.

ORDERING INFORMATION

Package| D2PAK (TO-263)| D2PAK (TO-263)| D2PAK (TO-263)| I2PAK (TO-262)
Lead (Pb)-free and halogen-free| SiHF720S-GE3| SiHF720STRR-GE3 a| SiHF720STRL- GE3 a| SiHF720L-GE3
Lead (Pb)-free| IRF720SPbF| IRF720STRRPbF a| –| IRF720LPbF

Note

• See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 400| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 3.3| A
TC = 100 °C| 2.1
Pulsed drain current a| IDM| 13
Linear derating factor| | 0.40| W/°C
Linear derating factor (PCB mount) e| 0.025
Single pulse avalanche energy b| EAS| 190| mJ
Avalanche current a| IAR| 3.3| A
Repetitive avalanche energy a| EAR| 5.0| mJ
Maximum power dissipation| TC = 25 °C| PD| 50| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 3.1
Peak diode recovery dv/dt c| dv/dt| 4.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 50 V, starting TJ = 25 °C, L = 30 mH, Rg = 25 Ω, IAS = 3.3 A (see fig. 12)
• ISD ≤ 3.3 A, di/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case
• When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-ambient (PCB mount) a| RthJA| –| 40
Maximum junction-to-case (Drain)| RthJC| –| 2.5

Note

• When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0, ID = 250 μA| 400| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.51| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 400 V, VGS = 0 V| –| –| 25| μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 2.0 Ab| –| –| 1.8| W
Forward transconductance| gfs| VDS = 50 V, ID = 2.0 Ab| 1.7| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 410| –|

pF

Output capacitance| Coss| –| 120| –
Reverse transfer capacitance| Crss| –| 47| –
Total gate charge| Qg| VGS = 10 V| ID = 3.3 A, VDS = 320 V, see fig. 6 and 13 b| –| –| 20|

nC

Gate-source charge| Qgs| –| –| 3.3
Gate-drain charge| Qgd| –| –| 11
Turn-on delay time| td(on)| VDD = 200 V, ID = 3.3 A, Rg = 18 W, RD = 56 W, see fig. 10 b| –| 10| –|

ns

Rise time| tr| –| 14| –
Turn-off delay time| td(off)| –| 30| –
Fall time| tf| –| 13| –
Gate input resistance| Rg| f = 1 MHz, open drain| 1.2| –| 7.3| W
Internal drain inductance| LD| Between lead,    mm (0.25″) from package and center of     die contact

| –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse
p – n junction diode| –| –| 3.3| A
Pulsed diode forward current a| ISM| –| –| 13
Body diode voltage| VSD| TJ = 25 °C, IS = 3.3 A, VGS = 0 V b| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 3.3 A, di/dt = 100 A/μs b| –| 270| 600| ns
Body diode reverse recovery charge| Qrr| –| 1.4| 3.0| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Output Characteristics, TC = 150 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10a – Switching Time Test Circuit

Fig. 10b – Switching Time Waveforms

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a – Unclamped Inductive Test Circuit

Fig. 12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

Fig. 13a – Basic Gate Charge Waveform

Fig. 13b – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91044.

TO-263AB (HIGH VOLTAGE)

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D| 8.38| 9.65| 0.330| 0.380
A1| 2.03| 3.02| 0.080| 0.119| D1| 6.86| –| 0.270| –
b| 0.51| 0.99| 0.020| 0.039| E| 9.65| 10.67| 0.380| 0.420
b1| 0.51| 0.89| 0.020| 0.035| E1| 6.22| –| 0.245| –
b2| 1.14| 1.78| 0.045| 0.070| e| 2.54 BSC| 0.100 BSC
b3| 1.14| 1.73| 0.045| 0.068| L| 13.46| 14.10| 0.530| 0.555
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.065
c1| 0.38| 0.58| 0.015| 0.023| L2| 3.56| 3.71| 0.140| 0.146
c2| 1.14| 1.65| 0.045| 0.065|
ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Recommended Minimum Pads Dimensions in Inches/(mm)
Return to Index

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF720S, SiHF720S, IRF720L, SiHF720L MOSFETs | Vishay

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