VISHAY SIHP100N60E-GE3 E Series Power MOSFET Instructions

: May 15, 2024
: VISHAY

Table of Contents

E Series Power MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Disclaimer
References
Read User Manual Online (PDF format)
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SiHP100N60E
Vishay Siliconix

E Series Power MOSFET

PRODUCT SUMMARY

FEATURES

4 th generation E series technology
Low figure-of-merit (FOM) R on x Qg
Low effective capacitance (C o(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
– High-intensity discharge (HID)
– Fluorescent ballast lighting
Industrial
– Welding
– Induction heating
– Motor drives
– Battery chargers
– Solar (PV inverters)

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free and halogen-free| SiHP100N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 30| A
TC = 100 °C| 19
Pulsed drain current a| IDM| 73
Linear derating factor| | 1.67| W/°C
Single pulse avalanche energy b| EAS| 226| mJ
Maximum power dissipation| PD| 208| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dv/dt| 100| V/ns
Reverse diode dv/dt d| 23
Soldering recommendations (peak temperature)c| For 10 s| | 260| °C

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.0 A
c. 1.6 mm from case
d. ISD ≤ ID, di/dt = 100 A/μs, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.6
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.73| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 1| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 13 A| –| 0.086| 0.1| L
Forward transconductance a| gfs| VDS = 8 V, ID = 13 A| –| 11| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V, f = 1 MHz| –| 1851| –| pF
Output capacitance| Coss| –| 84| –
Reverse transfer capacitance| Crss| –| 5| –
Effective output capacitance, energy related a| Co(er)| VDS = 0 V to 480 V, VGS = 0 V| –| 64| –
Effective output capacitance, time related b| Co(tr)| –| 407| –
Total gate charge| Qg| VGS = 10 V| ID = 13 A, VDS = 480 V| –| 33| 50| nC
Gate-source charge| Qgs| –| 13| –
Gate-drain charge| Qgd| –| 10| –
Turn-on delay time| td(on)| VDD = 480 V, ID = 13 A, VGS = 10 V, Rg = 9.1 L| –| 21| 42| ns
Rise time| tr| –| 34| 68
Turn-off delay time| td(off)| –| 33| 66
Fall time| tf| –| 20| 40
Gate input resistance| Rg| f = 1 MHz, open drain| 0.3| 0.7| 1.4| L
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse
p – n junction diode | –| –| 30| A
Pulsed diode forward current| ISM| –| –| 73
Diode forward voltage| VSD| TJ = 25 °C, IS = 13 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr| TJ = 25 °C, IF = IS = 13 A,
di/dt = 100 A/μs, VR = 25 V| –| 358| 716| ns
Reverse recovery charge| Qrr| –| 5.1| 10.2| μC
Reverse recovery current| IRRM| –| 24| –| A

Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

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Note
a. VGS > minimum VGS at which RDS(on) is specified

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Disclaimer

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S20-0140-Rev. B, 16-Mar-2020
Document Number: 92142
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Revision: 01-Jan-2023
Document Number: 91000