VISHAY IRF840HPBF Power MOSFET Instructions

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IRF840HPBF
Vishay Siliconix
Power MOSFET

IRF840HPBF Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max.| 550
RDS(on) typ. (W) at 25 °C| VGS = 10 V| 0.740
Qg max. (nC)| 39
Qgs (nC)| 9
Qgd (nC)| 12
Configuration| Single

FEATURES

• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting
  – High-intensity discharge (HID)
  – Fluorescent ballast lighting

• Industrial
  – Welding
  – Induction heating
  – Motor drives
  – Battery chargers
  – Solar (PV inverters)

O RDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free and halogen-free| IRF840HPBF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| S Y MBOL| LI MIT| U NI T
Drain-source voltage| VDS| 500|

V

Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 7.3| A
TC = 100 °C| 4.6
Pulsed drain current a| IDM| 17
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 175| mJ
Maximum power dissipation| PD| 125| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dv/dt| 100| V/ns
Reverse diode dv/dt d| 0.2
Soldering recommendations (peak temperature) c| For 10 s| | 260| °C

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 5 A
c. 1.6 mm from case
d. ISD ≤ ID, di/dt = 100 A/μs, starting TJ = 25 °C

THERMAL  RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| T EST CONDITIONS| MI N .| T Y P.| MAX.| UN I T
---|---|---|---|---|---|---
Sta t ic
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.56| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 1| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 100
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 4.8 A| –| 0.740| 0.850| W
Forward transconductance a| gfs| VDS = 50 V, ID = 4.8 A| –| 2.8| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V, f = 1 MHz| –| 1059| –| pF
Output capacitance| Coss| –| 125| –
Reverse transfer capacitance| Crss| –| 14| –
Effective output capacitance, energy related a| Co(er)| VDS = 0 V to 400 V, VGS = 0 V| –| 40| –
Effective output capacitance, time related b| Co(tr)| –| 72| –
Total gate charge| Qg| VGS = 10 V| ID = 8 A, VDS = 400 V| –| 26| 39| nC
Gate-source charge| Qgs| –| 9| –
Gate-drain charge| Qgd| –| 12| –
Turn-on delay time| td(on)| VDD = 400 V, ID = 8 A, VGS = 10 V, Rg = 9.1 W| –| 15| 30| ns
Rise time| tr| –| 30| 60
Turn-off delay time| td(off)| –| 23| 46
Fall time| tf| –| 17| 34
Gate input resistance| Rg| f = 1 MHz, open drain| 0.5| 1.0| 2.0| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode
| –| –| 7.3| A
Pulsed diode forward current| ISM| –| –| 17
Diode forward voltage| VSD| TJ = 25 °C, IS = 8 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr| TJ = 25 °C, IF = IS = 8 A, di/dt = 100 A/μs, VR = 25 V| –| 441| 882| ns
Reverse recovery charge| Qrr| –| 2.9| 5.8| μC
Reverse recovery current| IRRM| –| 12| –| A

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related  documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92441.

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Revision: 01-Jan-2024
Document Number: 91000
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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF840HPBF MOSFETs | Vishay

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