VISHAY IRFPG40 Power MOSFET Owner’s Manual

IRFPG40
Vishay Siliconix
www.vishay.com

PRODUCT SUMMARY

VDS (V)| 1000
RDS(on) (L)| VGS = 10 V| 3.5
Qg (max.) (nC)| 120
Qgs (nC)| 16
Qgd (nC)| 65
Configuration| Single

Power MOSFET

FEATURES

• Dynamic dV/dt rated
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note
• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.
  For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The O-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFPG40PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 1000| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 4.3|

A

TC = 100 °C| 2.7
Pulsed drain current a| IDM| 17
Linear derating factor|  | 1.2| W/°C
Single pulse avalanche energy b| EAS| 490| mJ
Repetitive avalanche current a| IAR| 4.3| A
Repetitive avalanche energy a| EAR| 15| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 1.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| for 10 s|  | 300 d
Mounting torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 50 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12)
c. ISD ≤ 4.3 A, dI/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.83
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static| |
Drain-source breakdown voltage| Vps| VGS = 0 V, ID = 250 pA| 1000| | | V
VDS temperature coefficient| AN/Ds/Tj| Reference to 25 °C, ID = 1 mA| | 1.| | V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 pA| 2.0| | 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| | –| ± 100| nA
Zero gate voltage drain current| loss| VDs = 1000 V, VGS = 0 V| | –| 100| PA
VDs = 800V, Vss = 0 V, Tj = 125 CC| | –| 500
Drain-source on-state resistance| RDsion)| VGS = 10 V| I ID = 2.6 A°| | –| 4.| 12
Forward transconductance| gfs| VDS = 50 V, ID = 2.6 A b| 33| | –| S
Dynamic|
Input capacitance| C,ss| VGS = 0 V.
VDS = 25 V,
1= 1. 5 see fi
1.0 MHz, fig.| | 1600| | pF
Output capacitance| Coss| | 170| –
Reverse transfer capacitance| C,ss| | 56| –
Total gate charge| 9| VGS = 10 V| ID = 4.3 A, VDs = 400 V,| | –| 120| nC
Gate-source charge| Ogs| see fig. 6 and 13 b| | 16
Gate-drain charge| agd| | | 65
Turn-on delay time| tcOn)| VDD = 500 V, ID = 4.3 A ,
Rg = 9.1 f2, RD = 120 52. see fig. 10 h| | 15| –| ns
Rise time| tr| | 33| –
Turn-off delay time| td(oft)| | 100|
Fall time| tr| | 30|
Internal drain inductance| LD| Between lead,
6 mm (0.251 from
die contact package and center of| | 5.0| | nH
Internal source inductance| Ls| | 13| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol showing the integral reverse p – n junction diode| | –| 4.| A
Pulsed diode forward current a| ism| | | 17
Body diode voltage| VSD| Tj= 25 °C, Is = 4.3 A, VGS =0Vb| | –| 2.| V
Body diode reverse recovery time| to.| Tj = 25 °C, IF = 4.3 A, dl/dt = 100 Alps b| | 470| 710| ns
Body diode reverse recovery charge| Off| | 2.| 3.| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91253.

Package Information

Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC ® TO247, variation AC
2.  All dimensions are in mm
3.  Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7.  Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8.  Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4.  Thermal pad contour optional with dimensions D1 and E1
5.  Lead finish uncontrolled in L1
6.  Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7.  Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Vishay
Disclaimer
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S22-0057-Rev. C, 31-Jan-2022
1Document Number: 91253
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
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References

• applications.no
• IRFPG40 MOSFETs | Vishay

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