IRFBC40 Vishay Siliconix Discrete Owner’s Manual

: August 24, 2024
: VISHAY

Table of Contents

IRFBC40 Vishay Siliconix Discrete
Product Usage Instructions
FEATURES
DESCRIPTION
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
FAQ
References
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IRFBC40 Vishay Siliconix Discrete

Specifications

Brand : Vishay Siliconix
Model : IRFBC40
Type : Power MOSFET
Package Type : TO-220AB
Channel Type: N-Channel
Drain-Source Voltage (VDS) : 600V
On-Resistance (RDS(on)): 1.2Ω
Total Gate Charge (Qg max.): 60nC
Gate-Source Charge (Qgs): 8.3nC
Gate-Drain Charge (Qgd) : 30nC

Description
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is widely used in commercial- industrial applications due to its low thermal resistance and cost.

Ordering Information

Lead (Pb)-free: IRFBC40PbF
Lead (Pb)-free and halogen-free: IRFBC40PbF-BE3

Thermal Resistance Ratings

Maximum Junction-to-Ambient: 62°C/W
Case-to-sink, flat, greased surface: 1.0°C/W
Maximum Junction-to-Case (Drain): 0.50°C/W

Product Usage Instructions

Mounting: Use a 6-32 or M3 screw for mounting the device with the specified torque.
Operating Temperature: Ensure the operating temperature range is between -55°C to +150°C.
Soldering: Follow the soldering recommendations with a peak temperature not exceeding the specified value for 10 seconds.

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

VDS (V)| 600
RDS(on) (W)| VGS = 10 V| 1.2
Qg max. (nC)| 60
Qgs (nC)| 8.3
Qgd (nC)| 30
Configuration| Single
ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRFBC40PbF
Lead (Pb)-free and halogen-free| IRFBC40PbF-BE3
| ORDERING INFORMATION|
---|---|---
| Package| TO-220AB|
| Lead (Pb)-free| IRFBC40PbF|
| Lead (Pb)-free and halogen-free| IRFBC40PbF-BE3|
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 6.2|

A

TC = 100 °C| 3.9
Pulsed drain current a| IDM| 25
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 570| mJ
Repetitive avalanche current a| IAR| 6.2| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dV/dt c| dV/dt| 3.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 50 V, starting TJ = 25 °C, L = 27 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12)
ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from the case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.7| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 100| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 3.7A b| –| –| 1.2| W
Forward transconductance| gfs| VDS = 100 V, ID = 3.7 A b| 4.7| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1300| –|

pF

Output capacitance| Coss| –| 160| –
Reverse transfer capacitance| Crss| –| 30| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 6.2 A, VDS = 360 V,

see fig. 6 and 13 b

| –| –| 60|

nC

Gate-source charge| Qgs| –| –| 8.3
Gate-drain charge| Qgd| –| –| 30
Turn-on delay time| td(on)|

VDD = 300 V, ID = 6.2 A,

Rg = 9.1 W, RD = 47 W, see fig. 10 b

| –| 13| –|

ns

Rise time| tr| –| 18| –
Turn-off delay time| td(off)| –| 55| –
Fall time| tf| –| 20| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.3| –| 3.9| W
Internal drain inductance| LD| Between lead, D

6 mm (0.25″) from package and center of

G

die contact

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse G

p – n junction diode

| –| –| 6.2|

A

Pulsed diode forward current a| ISM| –| –| 25
Body diode voltage| VSD| TJ = 25 °C, IS = 6.2 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs b| –| 450| 940| ns
Body diode reverse recovery charge| Qrr| –| 3.8| 7.9| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91115.

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims
1. any and all liability arising out of the application or use of any product,
2. any and all liability, including without limitation special, consequential or incidental damages, and
3. any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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FAQ

Is this product RoHS-compliant?
This datasheet provides information on RoHS-compliant and non-RoHS-compliant parts. Please refer to the datasheet for specific details.

What is the maximum drain-source voltage?
The maximum drain-source voltage is 600V.

What is the package type of this MOSFET?
The package type is TO-220AB.