VISHAY TO-247AC Power MOSFET User Manual

June 3, 2024
VISHAY

VISHAY TO-247AC Power MOSFET

VISHAY-TO-247AC-Power-MOSFET-product

Power MOSFET

PRODUCT SUMMARY

VDS (V)| -100
RDS(on) (W)| VGS = -10 V| 0.20
Qg (max.) (C)| 61
Qgs (NC)| 14
QGD (NC)| 29
Configuration| Single

VISHAY-TO-247AC-Power-MOSFET-fig-1

FEATURES

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • P-channel
  • Isolated central mounting hole
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

  • This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247AC package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar to but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFP9140PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at – 10 V| TC = 25 °C| ID| -21|

A

TC = 100 °C| -15
Pulsed drain current a| IDM| -84
Linear derating factor| | 1.2| W/°C
Single pulse avalanche energy b| EAS| 960| mJ
Repetitive avalanche current a| IAR| -21| A
Repetitive avalanche energy a| EAR| 18| mJ
Maximum power dissipation| TC = 25 °C| PD| 180| W
Peak diode recovery dV/dt c| dV/dt| -5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -5 to +175| °C
Soldering recommendations (peak temperature)| for 10 s| | 300 d
Mounting Torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

  • a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
  • b. VDD = – 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25 Ω, IAS = – 21 A (see fig. 12)
  • c. ISD ≤ – 21 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
  • d. 1.6 mm from the case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| that| –| 40|

°C/W

Case-to-sink, flat, greased surface| RCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.83
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT|
Static|
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -100| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.087| –| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|
Zero gate voltage drain current| IDSS| VDS = -100 V, VGS = 0 V| –| –| -100| μA|
VDS = -80 V, VGS = 0 V, TJ = 150 °C| –| –| -500|
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = – 13 Ab| –| –| 0.20| W|
Forward transconductance| gfs| VDS = -50 V, ID = – 13 Ab| 6.2| –| –| S|
Dynamic|
Input capacitance| Ciss| VGS = 0 V, VDS = – 25 V,

f = 1.0 MHz, see fig. 5

| –| 1400| –|

pF

|
Output capacitance| Coss| –| 590| –|
Reverse transfer capacitance| Crss| –| 140| –|
Total gate charge| Qg|

VGS = -10 V

|

ID = – 19 A, VDS = -80 V,

see fig. 6 and 13 b

| –| –| 61|

nC

|
Gate-source charge| Qgs| –| –| 14|
Gate-drain charge| Qgd| –| –| 29|
Turn-on delay time| td(on)|

VDD = – 50 V, ID = -19 A,

Rg = 9.1 W, RD = 2.4 W, see fig. 10 b

| –| 16| –|

ns

|
Rise time| tr| –| 73| –|
Turn-off delay time| td(off)| –| 34| –|
Fall time| tf| –| 57| –|
Internal drain inductance| LD| Between lead,| |

D

S

| | –| 5.0| –| |
6 mm (0.25″) from the package and center of the die contact|

G

| NH|

Internal source inductance

|

LS

|

|

13

|

|
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol| | |

D

S

| –| –| – 21| |
showing the integral reverse

p – n junction diodeVISHAY-TO-247AC-Power-MOSFET-fig-3

|

G

| A|

Pulsed diode forward current a

|

ISM

|

|

|

– 84

|
Body diode voltage| VSD| TJ = 25 °C, IS = – 21 A, VGS = 0 V b| –| –| – 5.0| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = – 19 A, dI/dt = 100 A/μs b| –| 130| 260| ns|
Body diode reverse recovery charge| Qrr| –| 0.35| 0.70| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)|

Notes

  • a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
  • b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

  • Fig. 1 – Typical Output Characteristics, TC = 25 °C
  • Fig. 2 – Typical Output Characteristics, TC = 175 °CVISHAY-TO-247AC-Power-MOSFET-fig-5
  • F ig. 3 – Typical Transfer Characteristics
  • Fig. 4 – Normalized On-Resistance vs. Temperature
  • Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
  • Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
  • Fig. 7 – Typical Source-Drain Diode Forward Voltage
  • Fig. 8 – Maximum Safe Operating Area
  • Fig. 9 – Maximum Drain Current vs. Case Temperature
  • Fig. 10 – Switching Time Test Circuit
  • Fig. 11 – Switching Time Waveforms
  • Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
  • Fig. 13 – Unclamped Inductive Test Circuit
  • Fig. 14 – Unclamped Inductive Waveforms
  • Fig. 15 – Maximum Avalanche Energy vs. Drain Current
  • Fig. 16 – Basic Gate Charge Waveform
  • Fig. 17 – Gate Charge Test CircuitVISHAY-TO-247AC-Power-MOSFET-fig-20

Peak Diode Recovery DV/DT Test CircuitVISHAY-TO-247AC-Power-MOSFET-
fig-21

Note

  • Compliment N-Channel of D.U.T. for driver
  1. Driver gate drive
  • Note
    a. VGS = – 5 V for logic level and – 3 V drive devices

  • Fig. 18 – For P-Channel

TO-247AC (High Voltage)

VISHAY-TO-247AC-Power-MOSFET-
fig-23

VERSION 1: FACILITY CODE = 9

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|

Notes

  1. Package reference: JEDEC® TO247, variation AC
  2. All dimensions are in mm
  3. Slot required, notch may be rounded
  4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at th e outermost extremes of the plastic body
  5. Thermal pad contour optional with dimensions D1 and E1
  6. Lead finish uncontrolled in L1
  7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
  8. Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b 4 dimension at maximum material condition

VERSION 2: FACILITY CODE = YVISHAY-TO-247AC-Power-MOSFET-
fig-24

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2.  Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes  of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
  7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer
ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for a particular purpose, non- infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time.

All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or approval by Vishay of any of the products, services, or opinions of the corporation, organization, or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality, or content of the third-party website or for that subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

  • Revision: 19-Oct-2020
  • For technical questions, contact: hvm@vishay.com
  • THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND IN THIS DOCUMENT ARE
  • SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
  • Document Number: 91360

Documents / Resources

| VISHAY TO-247AC Power MOSFET [pdf] User Manual
TO-247AC, Power MOSFET, TO-247AC Power MOSFET, MOSFET
---|---

References

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