VISHAY TO-247AC Power MOSFET User Manual
- June 3, 2024
- VISHAY
Table of Contents
VISHAY TO-247AC Power MOSFET
Power MOSFET
PRODUCT SUMMARY
VDS (V)| -100
RDS(on) (W)| VGS = -10 V| 0.20
Qg (max.) (C)| 61
Qgs (NC)| 14
QGD (NC)| 29
Configuration| Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- P-channel
- Isolated central mounting hole
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details
DESCRIPTION
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247AC package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar to but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| IRFP9140PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at – 10 V| TC = 25 °C| ID| -21|
A
TC = 100 °C| -15
Pulsed drain current a| IDM| -84
Linear derating factor| | 1.2| W/°C
Single pulse avalanche energy b| EAS| 960| mJ
Repetitive avalanche current a| IAR| -21| A
Repetitive avalanche energy a| EAR| 18| mJ
Maximum power dissipation| TC = 25 °C| PD| 180| W
Peak diode recovery dV/dt c| dV/dt| -5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -5 to +175| °C
Soldering recommendations (peak temperature)| for 10 s| | 300 d
Mounting Torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = – 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25 Ω, IAS = – 21 A (see fig. 12)
- c. ISD ≤ – 21 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
- d. 1.6 mm from the case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| that| –| 40|
°C/W
Case-to-sink, flat, greased surface| RCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.83
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT|
Static|
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -100| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –|
-0.087| –| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –|
-4.0| V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|
Zero gate voltage drain current| IDSS| VDS = -100 V, VGS = 0 V| –| –| -100|
μA|
VDS = -80 V, VGS = 0 V, TJ = 150 °C| –| –| -500|
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = – 13 Ab| –| –|
0.20| W|
Forward transconductance| gfs| VDS = -50 V, ID = – 13 Ab| 6.2| –| –| S|
Dynamic|
Input capacitance| Ciss| VGS = 0 V, VDS = – 25 V,
f = 1.0 MHz, see fig. 5
| –| 1400| –|
pF
|
Output capacitance| Coss| –| 590| –|
Reverse transfer capacitance| Crss| –| 140| –|
Total gate charge| Qg|
VGS = -10 V
|
ID = – 19 A, VDS = -80 V,
see fig. 6 and 13 b
| –| –| 61|
nC
|
Gate-source charge| Qgs| –| –| 14|
Gate-drain charge| Qgd| –| –| 29|
Turn-on delay time| td(on)|
VDD = – 50 V, ID = -19 A,
Rg = 9.1 W, RD = 2.4 W, see fig. 10 b
| –| 16| –|
ns
|
Rise time| tr| –| 73| –|
Turn-off delay time| td(off)| –| 34| –|
Fall time| tf| –| 57| –|
Internal drain inductance| LD| Between lead,| |
D
S
| | –| 5.0| –| |
6 mm (0.25″) from the package and center of the die contact|
G
| NH|
Internal source inductance
|
LS
|
–
|
13
|
–
|
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol| | |
D
S
| –| –| – 21| |
showing the integral reverse
p – n junction diode
|
G
| A|
Pulsed diode forward current a
|
ISM
|
–
|
–
|
– 84
|
Body diode voltage| VSD| TJ = 25 °C, IS = – 21 A, VGS = 0 V b| –| –| – 5.0| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = – 19 A, dI/dt = 100
A/μs b| –| 130| 260| ns|
Body diode reverse recovery charge| Qrr| –| 0.35| 0.70| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)|
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
- Fig. 1 – Typical Output Characteristics, TC = 25 °C
- Fig. 2 – Typical Output Characteristics, TC = 175 °C
- F ig. 3 – Typical Transfer Characteristics
- Fig. 4 – Normalized On-Resistance vs. Temperature
- Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
- Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
- Fig. 7 – Typical Source-Drain Diode Forward Voltage
- Fig. 8 – Maximum Safe Operating Area
- Fig. 9 – Maximum Drain Current vs. Case Temperature
- Fig. 10 – Switching Time Test Circuit
- Fig. 11 – Switching Time Waveforms
- Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
- Fig. 13 – Unclamped Inductive Test Circuit
- Fig. 14 – Unclamped Inductive Waveforms
- Fig. 15 – Maximum Avalanche Energy vs. Drain Current
- Fig. 16 – Basic Gate Charge Waveform
- Fig. 17 – Gate Charge Test Circuit
Peak Diode Recovery DV/DT Test Circuit
Note
- Compliment N-Channel of D.U.T. for driver
- Driver gate drive
-
Note
a. VGS = – 5 V for logic level and – 3 V drive devices -
Fig. 18 – For P-Channel
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|
Notes
- Package reference: JEDEC® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at th e outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b 4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
- Revision: 19-Oct-2020
- For technical questions, contact: hvm@vishay.com
- THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND IN THIS DOCUMENT ARE
- SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- Document Number: 91360
Documents / Resources
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VISHAY TO-247AC Power
MOSFET
[pdf] User Manual
TO-247AC, Power MOSFET, TO-247AC Power MOSFET, MOSFET
---|---