VISHAY IRFD014 Power MOSFET Owner’s Manual

: August 13, 2024
: VISHAY

Table of Contents

VISHAY IRFD014 Power MOSFET
OVERVIEW
FEATURES
DESCRIPTION
SPECIFICATIONS
TYPICAL CHARACTERISTICS
CONTACT
References
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VISHAY IRFD014 Power MOSFET

OVERVIEW

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
For automatic insertion
End stackable
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style that can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION

Package| HVMDIP
Lead (Pb)-free| IRFD014PbF
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20

Continuous drain current

| VGS at 10 V| TA = 25 °C| ID| 1.7|

A

TA = 100 °C| 1.2
Pulsed drain current a| IDM| 14
Linear derating factor| | 0.0083| W/°C
Single pulse avalanche energy b| EAS| 130| mJ
Maximum power dissipation| TA = 25 °C| PD| 1.3| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175|

°C

Soldering recommendations (peak temperature)| For 10 s| | 300d

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = 1.7 A (see fig. 12)
ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
1.6 mm from the case

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 120| °C/W

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.063| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero Gate Voltage Drain Current

| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 1.0 Ab| –| –| 0.20| W
Forward Transconductance| gfs| VDS = 25 V, ID = 1.0 Ab| 0.96| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 310| –|

pF

Output Capacitance| Coss| –| 160| –
Reverse Transfer Capacitance| Cross| –| 37| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 10 A, VDS = 48 V

see fig. 6 and 13b

| –| –| 11|

nC

Gate-Source Charge| Qgs| –| –| 3.1
Gate-Drain Charge| Qgd| –| –| 5.8
Turn-On Delay Time| td(on)|

VDD = 30 V, ID = 10 A

Rg = 24 W, RD = 2.7 W, see fig. 10b

| –| 10| –|

ns

Rise Time| tr| –| 50| –
Turn-Off Delay Time| td(off)| –| 13| –
Fall Time| tf| –| 19| –
Internal Drain Inductance| LD| Between lead,

6 mm (0.25″) from the package and center of the die contact

| –| 4.0| –|

nH

Internal Source Inductance| LS| –| 6.0| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse junction diode

| –| –| 1.7|

A

Pulsed Diode Forward Current| ISM| –| –| 14
Body Diode Voltage| VSD| TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb| –| –| 1.6| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb| –| 70| 140| ns
Body Diode Reverse Recovery Charge| Qrr| –| 0.20| 0.40| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Peak Diode Recovery dV/dt Test Circuit

HVM DIP (High voltage)

| INCHES| MILLIMETERS
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 0.310| 0.330| 7.87| 8.38
E| 0.300| 0.425| 7.62| 10.79
L| 0.270| 0.290| 6.86| 7.36
ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974

Note

Package length does not include mold flash, protrusions or gate burrs. Package width does not include interleaved flash or protrusions.

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN, OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies, or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims

any liability arising out of the application or use of any product,
all liability, including without limitation special, consequential, or incidental damages, and
any implied warranties, including warranties of fitness for a particular purpose, non-infringement, and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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CONTACT

For technical questions, contact

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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