VISHAY IRFBE20PBF Power MOSFET Owner’s Manual
- June 21, 2024
- VISHAY
Table of Contents
IRFBE20
www.vishay.com **** Vishay
Siliconix
Power MOSFET
TO-220AB
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)|
800
RDS(on) (Ω)|
VGS = 10 V
|
6.5
Qg (max.) (nC)|
38
Qgs (nC)|
5.0
Qgd (nC)|
21
Configuration|
Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRFBE20PbF
Lead (Pb)-free and halogen-free| IRFBE20PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER|
SYMBOL
| LIMIT|
UNIT
Drain-source voltage|
VDS
| 800|
V
Gate-source voltage|
VGS
|
± 20
Continuous drain current| VGS at 10 V| TC = 25 °C|
ID
| 1.8|
A
TC = 100 °C|
1.2
Pulsed drain current a|
IDM
|
7.2
Linear derating factor| |
0.43
|
W/°C
Single pulse avalanche energy b|
EAS
| 180|
mJ
Repetitive avalanche current a|
IAR
| 1.8|
A
Repetitive avalanche energy a|
EAR
| 5.4|
mJ
Maximum power dissipation| TC = 25 °C|
PD
| 54|
W
Peak diode recovery dV/dt c|
dV/dt
| 2.0|
V/ns
Operating junction and storage temperature range|
TJ, Tstg
| -55 to +150|
°C
Soldering recommendations (peak temperature) d| For 10 s| |
300
Mounting torque| 6-32 or M3 screw| |
10
|
lbf · in
1.1
|
N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 104 mH, Rg = 25 Ω, IAS = 1.8 A (see
fig. 12)
c. ISD ≤ 1.8 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER|
SYMBOL
| TYP.| MAX.|
UNIT
Maximum junction-to-ambient|
RthJA
| –| 62|
°C/W
Case-to-sink, flat, greased surface|
RthCS
| 0.50|
–
Maximum junction-to-case (drain)|
RthJC
| –|
2.3
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER|
SYMBOL
| TEST CONDITIONS| MIN.| TYP.| MAX.|
UNIT
Static
Drain-source breakdown voltage|
VDS
| VGS = 0 V, ID = 250 μA|
800
| –| –|
V
VDS temperature coefficient|
ΔVDS/TJ
| Reference to 25 °C, ID = 1 mA|
–
| 0.98| –|
V/°C
Gate-source threshold voltage|
VGS(th)
| VDS = VGS, ID = 250 μA|
2.0
| –| 4.0|
V
Gate-source leakage|
IGSS
| VGS = ± 20 V|
–
| –| ± 100|
nA
Zero gate voltage drain current|
IDSS
| VDS = 800 V, VGS = 0 V|
–
| –| 100|
μA
VDS = 640 V, VGS = 0 V, TJ = 125 °C|
–
| –|
500
Drain-source on-state resistance|
RDS(on)
| VGS = 10 V| ID = 1.1 Ab|
–
| –| 6.5|
Ω
Forward transconductance|
gfs
| VDS = 100 V, ID = 1.1 Ab|
0.80
| –| –|
S
Dynamic
Input capacitance| Ciss| VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5|
–
| 530| –|
pF
Output capacitance| Coss|
–
| 150|
–
Reverse transfer capacitance| Crss|
–
| 90|
–
Total gate charge| Qg| VGS = 10 V| ID = 1.8 A, VDS = 400 V, see fig. 6 and 13b|
–
| –| 38|
nC
Gate-source charge| Qgs|
–
| –|
5.0
Gate-drain charge| Qgd|
–
| –|
21
Turn-on delay time| td(on)| VDD = 400 V, ID = 1.8 A,
Rg = 18 Ω, RD = 230 Ω, see fig. 10b|
–
| 8.2| –|
ns
Rise time| tr|
–
| 17|
–
Turn-off delay time| td(off)|
–
| 58|
–
Fall time| tf|
–
| 27|
–
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 4.2|
Ω
Internal drain inductance| LD|
Between lead, 6 mm (0.25″) from package and center of die contact
|
–
| 4.5| –|
nH
Internal source inductance| LS|
–
| 7.5|
–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS|
MOSFET symbol showing the integral reverse p – n junction diode
|
–
| –| 1.8|
A
Pulsed diode forward current a| ISM|
–
| –|
7.2
Body diode voltage| VSD| TJ = 25 °C, IS = 1.8 A, VGS = 0 Vb|
–
| –| 1.4|
V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 1.8 A, dI/dt = 100 A/μsb|
–
| 380| 570|
ns
Body diode reverse recovery charge| Qrr|
–
| 0.94| 1.4|
μC
Forward turn-on time|
ton
| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, T C = 25 °C
Fig. 2 – Typical Output Characteristics, T C = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 9 – Maximum Drain Current vs. Case Temperature
- Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
- Vary tp to obtain required IAS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Fig. 13a – Basic Gate Charge Waveform
-
Current regulator
Same type as D.U.T. -
Current sampling resistors
Fig. 13b – Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance current transformer -
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. – device under test
- Driver gate drive
- D.U.T. ISD waveform
- Reverse recovery current
- D.U.T. VDS waveform
- Re-applied voltage
- Inductor current
- Body diode forward drop
- Diode recovery dV/dt
- Body diode forward current
Note
a. VGS = 5 V for logic level devices
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91117.
S21-0868-Rev. C, 16-Aug-2021 Document Number: 91117
For technical questions, contact: hvm@vishay.com
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Revision: 01-Jan-2024 Document Number: 91000
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References
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