VISHAY IRFBG20 Power Mosfet Owner’s Manual
- June 20, 2024
- VISHAY
Table of Contents
VISHAY IRFBG20 Power Mosfet
Specifications
- Brand: Vishay Siliconix
- Product Name: IRFBG20
- Package Type: TO-220AB
- Channel Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 1000V
- RDS(on): 11 ohms (VGS = 10V)
- Maximum Gate Charge (Qg max.): 38nC
- Total Gate Charge (Qg): 38nC
- Gate-Source Charge (Qgs): 4.9nC
- Gate-Drain Charge (Qgd): 22nC
Product Description:
The Vishay IRFBG20 is a power MOSFET designed to offer fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO- 220AB package is ideal for commercial-industrial applications with power dissipation levels up to approximately 50W.
Features:
- RoHS-compliant
- Fast switching
- Ruggedized device design
- Low on-resistance
- Cost-effective
Ordering Information:
Package Lead (Pb)-free: IRFBG20PbF Lead (Pb)-free and halogen-free: IRFBG20PbF-BE3
Thermal Resistance Ratings:
- Maximum Junction-to-Ambient: 62°C/W
- Case-to-Sink, Flat, Greased Surface: 0.50°C/W
- Maximum Junction-to-Case (Drain): 2.3°C/W
Usage Instructions:
Installation:
- Ensure the device is compatible with your application requirements.
- Mount the MOSFET securely using a 6-32 or M3 screw with the recommended mounting torque.
Operation:
- Apply the appropriate gate-source voltage and ensure proper heat dissipation.
- Monitor the drain-source voltage and current to stay within safe operating limits.
FAQ
Q: What is the maximum drain-source voltage of the IRFBG20 MOSFET?
A: The maximum drain-source voltage is 1000V.
Q: Is the IRFBG20 RoHS compliant?
A: Yes, the IRFBG20 is RoHS-compliant.
Q: What is the total gate charge of the IRFBG20?
A: The total gate charge is 38nC.
Power MOSFET
PRODUCT SUMMARY
VDS (V)| 1000
RDS(on) (W)| VGS = 10 V| 11
Qg max. (nC)| 38
Qgs (nC)| 4.9
Qgd (nC)| 22
Configuration| Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note - This datasheet provides information about parts that are RoHS-compliant and/or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRFBG20PbF
Lead (Pb)-free and halogen-free| IRFBG20PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 1000| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 1.4|
A
TC = 100 °C| 0.86
Pulsed drain current a| IDM| 5.6
Linear derating factor| | 0.43| W/°C
Single pulse avalanche energy b| EAS| 200| mJ
Repetitive avalanche current a| IAR| 1.4| A
Repetitive avalanche energy a| EAR| 5.4| mJ
Maximum power dissipation| TC = 25 °C| PD| 54| W
Peak diode recovery dV/dt c| dV/dt| 1.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = 50 V, starting TJ = 25 °C, L = 193 μH, Rg = 25 Ω, IAS = 1.4 A (see fig. 12)
- c. ISD ≤ 1.4 A, dI/dt ≤ 60 A/μs, VDD ≤ 600, TJ ≤ 150 °C
- d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 2.3
SPECIFICATIONS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT|
Static| | | | | | | |
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 1000| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 1.2|
–| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0|
V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|
Zero gate voltage drain current| IDSS| VDS = 1000 V, VGS = 0 V| –| –| 100| μA|
VDS = 800 V, VGS = 0 V, TJ = 125 °C| –| –| 500|
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 0.84 A b| –| –|
11| W|
Forward transconductance| gfs| VDS = 50 V, ID = 0.84 A b| 1.0| –| –| S|
Dynamic| | | | | | | |
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 500| –|
pF
|
Output capacitance| Coss| –| 52| –|
Reverse transfer capacitance| Crss| –| 17| –|
Total gate charge| Qg|
VGS = 10 V
|
ID = 1.4 A, VDS = 400 V,
see fig. 6 and 13 b
| –| –| 38|
nC
|
Gate-source charge| Qgs| –| –| 4.9|
Gate-drain charge| Qgd| –| –| 22|
Turn-on delay time| td(on)|
VDD = 500 V, ID = 1.4 A,
Rg = 18 W, RD = 370 W, see fig. 10 b
| –| 9.4| –|
ns
|
Rise time| tr| –| 17| –|
Turn-off delay time| td(off)| –| 58| –|
Fall time| tf| –| 31| –|
Internal drain inductance| LD| Between lead,| |
D
S
| | –| 4.5| –| |
6 mm (0.25″) from package and center of die contact|
G
| nH|
Internal source inductance| LS| –| 7.5| –|
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 3.4| W|
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol| | |
D
S
| –| –| 1.4| |
showing the integral reverse|
G
| A|
Pulsed diode forward current a| ISM| –| –| 5.6|
p – n junction diode| | |
Body diode voltage| VSD| TJ = 25 °C, IS = 1.4 A, VGS = 0 V b| –| –| 1.5| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 1.4 A, dI/dt = 100
A/μs b| –| 130| 190| ns|
Body diode reverse recovery charge| Qrr| –| 0.46| 0.69| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)|
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91123.
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S21-0883-Rev. D, 30-Aug-2021
Document Number: 91123
For technical questions, contact: hvm@vishay.com
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References
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