VISHAY IRFL9014 Power Mosfet Instruction Manual
- June 1, 2024
- VISHAY
Table of Contents
VISHAY IRFL9014 Power Mosfet Instruction Manual
Power MOSFET
FEATURES
- Surface-mount
- Available in tape and reel
- Dynamic dV/dt rating
- Repetitive avalanche rated
- P-channel
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance,
and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase,
infrared, or wave soldering techniques. Its unique package design allows for
easy automatic pick-and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to an enlarged tab for
heatsinking. Power dissipation of greater than 1.25 W is possible in a typical
surface mount application.
PRODUCT SUMMARY|
---|---
VDS (V)| -60|
RDS(on) (W)| VGS = -10 V| 0.50|
Qg (Max.) (nC)| 12|
Qgs (nC)| 3.8|
Qgd (nC)| 5.1|
Configuration| Single|
ORDERING INFORMATION
Package| SOT-223
Lead (Pb)-free and halogen-free| SiHFL9014TR-GE3
IRFL9014TRPbF-BE3 a, b
Lead (Pb)-free| IRFL9014TRPbF a
Notes
a. See device orientation
b. “-BE3” denotes alternate manufacturing location
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at -10 V| TC = 25 °C| ID| -1.8| A
TC = 100 °C| -1.1
Pulsed drain current a| IDM| -14
Linear derating factor| | 0.025| W/°C
Linear derating factor (PCB mount) e| 0.017
Single pulse avalanche energy b| EAS| 140| mJ
Avalanche current a| IAR| -1.8| A
Repetitive avalanche energy a| EAR| 0.31| mJ
Maximum power dissipation| TC = 25 °C| PD| 3.1| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.0
Peak diode recovery dv/dt c| dV/dt| -4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. VDD = – 25 V, starting TJ = 25 °C, L = 50 mH, Rg = 25 , IAS = – 1.8 A
(see fig. 12)
c. ISD – 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. When mounted on 1″ square PCB (FR-4 or G-10 material)
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient (PCB mount) a| RthJA| –| 60| °C/W
Maximum junction-to-case (drain)| RthJC| –| 40
Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| -60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –|
-0.059| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| -2.0| –| -4.0|
V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -60 V, VGS = 0 V| –| –| – 100| μA
VDS = -48 V, VGS = 0 V, TJ = 125 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = 1.1 A b| –| –|
0.50| W
Forward transconductance| gfs| VDS = – 25 V, ID = 1.1 A b| 1.3| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,f = 1.0 MHz, see fig. 5| –|
270| –| pF
Output capacitance| Coss| –| 170| –
Reverse transfer capacitance| Crss| –| 31| –
Total gate charge| Qg| VGS = – 10 V| ID = – 6.7 A, VDS = – 48 V,see fig. 6 and
13 b| –| –| 12| nC
Gate-source charge| Qgs| –| –| 3.8
Gate-drain charge| Qgd| –| –| 5.1
Turn-on delay time| td(on)| VDD = – 30 V, ID = – 6.7 A,Rg = 24 W, RD = 4.0 W,
see fig. 10 b| –| 11| –|
ns
Rise time| tr| –| 63| –
Turn-off delay time| td(off)| –| 9.6| –
Fall time| tf| –| 31| –
Internal drain inductance| LD| Between lead,6 mm (0.25″) from package and
center of die contact
|
G
| D
S
| | –| 4.0| –| nH
Internal source inductance| LS| –| 6.0| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral
reversep – n junction diode
|
G
| |
D
S
| –| –| – 1.8| A
Pulsed diode forward current a| ISM| –| –| – 14
Body diode voltage| VSD| TJ = 25 °C, IS = – 1.8 A, VGS = 0 V b| –| –| – 5.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = – 6.7 A, dI/dt = 100
A/μs b| –| 80| 160| ns
Body diode reverse recovery charge| Qrr| –| 0.096| 0.19| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. Pulse width 300 μs; duty cycle 2 % TYPICAL CHARACTERISTICS (25
°C, unless otherwise noted)
**Fig. 1 – Typical Output Characteristics, TC = 25 °C
D, Drain Current (A)
VDS, Drain-to-Source Voltage (V)
Fig. 2 – Typical Output Characteristics, TC = 150 °C
– ID, Drain Current (A)
– VDS, Drain-to-Source Voltage (V)
Fig. 3 – Typical Transfer Characteristics
– ID, Drain Current (A)
– VGS, Gate-to-Source Voltage (V)
Fig. 4 – Normalized On-Resistance vs. Temperature
RDS(on), Drain-to-Source On Resistance (Normalized)
TJ, Junction Temperature (°C)
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Capacitance (pF)
– VDS, Drain-to-Source Voltage (V)
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
– VGS, Gate-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig. 7 – Typical Source-Drain Diode Forward Voltage
– ISD, Reverse Drain Current (A)
– VSD, Source-to-Drain Voltage (V)
Fig. 8 – Maximum Safe Operating Area
D, Drain Current (A)
– VDS, Drain-to-Source Voltage (V)
Fig. 9 – Maximum Drain Current vs. Case Temperature
D, Drain Current (A)
TC, Case Temperature (°C)
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveform
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
hermal Response (ZthJC)
t1, Rectangular Pulse Duration (s)
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
EAS, Single Pulse Energy (mJ)
Starting TJ, Junction Temperature (°C)
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
Fig. 14 – For P-Channel
Note
Compliment N-Channel of D.U.T. for driver
**Vishay Siliconix maintains worldwide manufacturing capability. Products may
be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all
qualified locations. For related documents such as package/tape drawings, part
marking, and reliability data,
seewww.vishay.com/ppg?91195.
**SOT-223 (HIGH VOLTAGE)
**
| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 1.55| 1.80| 0.061| 0.071
B| 0.65| 0.85| 0.026| 0.033
B1| 2.95| 3.15| 0.116| 0.124
C| 0.25| 0.35| 0.010| 0.014
D| 6.30| 6.70| 0.248| 0.264
E| 3.30| 3.70| 0.130| 0.146
e| 2.30 BSC| 0.0905 BSC
e1| 4.60 BSC| 0.181 BSC
H| 6.71| 7.29| 0.264| 0.287
L| 0.91| –| 0.036| –
L1| 0.061 BSC| 0.0024 BSC
q| –| 10′| –| 10′
ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimeters (inches).
- Dimension do not include mold flash.
- Outline conforms to JEDEC outline TO-261AA.
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT
NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all
persons acting on its or their behalf (collectively, “Vishay”), disclaim any
and all liability for any errors, inaccuracies or incompleteness contained in
any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the
suitability of the products for any particular purpose or the continuing
production of any product. To the maximum extent permitted by applicable law,
Vishay disclaims (i) any and all liability arising out of the application or
use of any product, (ii) any and all liability, including without limitation
special, consequential or incidental damages, and (iii) any and all implied
warranties, including warranties of fitness for particular purpose, non-
infringement and merchantability.
Statements regarding the suitability of products for certain types of
applications are based on Vishay’s knowledge of typical requirements that are
often placed on Vishay products in generic applications. Such statements are
not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable
for use in a particular application. Parameters provided in datasheets and /
or specifications may vary in different applications and performance may vary
over time. All operating parameters, including typical parameters, must be
validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and
conditions of purchase, including but not limited to the warranty expressed
therein.
Hyperlinks included in this datasheet may direct users to third-party
websites. These links are provided as a convenience and for informational
purposes only. Inclusion of these hyperlinks does not constitute an
endorsement or an approval by Vishay of any of the products, services or
opinions of the corporation, organization or individual associated with the
third-party website. Vishay disclaims any and all liability and bears no
responsibility for the accuracy, legality or content of the third-party
website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for
use in medical, life-saving, or life-sustaining applications or for any other
application in which the failure of the Vishay product could result in
personal injury or death. Customers using or selling Vishay products not
expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and
conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual
property rights is granted by this document or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective
owners
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED
HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
References
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>