IXYS DSEI60-02A FRED Fast Recovery Epitaxial Diode Single Diode Instructions

May 15, 2024
IXYS

IXYS DSEI60-02A FRED Fast Recovery Epitaxial Diode Single Diode Instructions
IXYS DSEI60-02A FRED Fast Recovery Epitaxial Diode Single
Diode

Part number

Backside: cathode
Part number

Features / Advantages

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    • Power dissipation within the diode
    • Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high frequency switching devices
  • Ant saturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package

TO-247

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer- electronics.

Fast Diode Ratings
Symbol **Definition
Conditions**
V RSM max. non-repetitive reverse blocking voltage
200
V RRM max. repetitive reverse blocking voltage
200 V
I R reverse current, drain current VR = 200 V
VR = 160 V TVJ = 125°C
V F forward voltage drop IF =      60 A
IF = 120 A
IF =      60 A TVJ    150 °C
IF = 120 A
I **FAV** average forward current TC = 115°Crectangular         d
= 0.5 TVJ = 150°C
V F0 r F threshold voltage for power loss calculation only
slope resistance TVJ = 150°C
4.3 mΩ
R thJC thermal resistance junction to case
R thCH thermal resistance case to heatsink
P tot total power dissipation

I FSM               max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V             TVJ = 45°C| | | 600| A
C J| junction capacitance VR = 200 V f = 1 MHz| TVJ = 25°C| | 170| | pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 6.5| | A
| IF = 70 A; VR = 100 V| TVJ = 100 °C| 11| A
t rr| reverse recovery time -diF/dt = 400 A/µs| TVJ = 25 °C| | 20| | ns
| | TVJ = 100 °C| 50| ns
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.| max.| Unit
I **RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0.8| | 1.2| Nm
F C**| mounting force with clip| | 20| 120| N

**Product Marking

**

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-02A| DSEI60-02A| Tube| 30| 471879

Outlines TO-247

Dimension

Sym. Inches min.     max. Millimeter min.     max.
A 0.185 0.209
A1 0.087 0.102
A2 0.059 0.098
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31     5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 –       0.177 –         4.49
Ø P 0.140 0.144 3.55     3.65
Q 0.212 0.244 5.38     6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055
b2 0.065 0.094
b4 0.102 0.135
c 0.015 0.035
D1 0.515       – 13.07       –
D2 0.020 0.053 0.51     1.35
E1 0.530       – 13.45          –
Ø P1 –       0.29 –        7.39

Fast Diode

  • Fig. 1 Forward current IF versus max. forward voltage drop VF

  • Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt

  • Fig. 3 Typ. peak reverse current IRM versus -diF /dt

  • Fig. 4 Dynamic parameters Qr , IRM versus TV
    Fast Diode

  • Fig. 5 Typ. recovery time t rr versus -diF /dt
    Fast Diode

  • Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt
    Fast Diode

  • Fig. 7 Transient thermal impedance junction to case
    Fast Diode

Constants for ZthJC calculation:

i| Rthi (K/W)| ti (s
1| 0.080| 0.00
2| 0.120| 0.0100
3| 0.100| 0.5000
4| 0.200| 0.0800

XYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

© 2020 IXYS all rights reserved

Company Logo

References

Read User Manual Online (PDF format)

Read User Manual Online (PDF format)  >>

Download This Manual (PDF format)

Download this manual  >>

IXYS User Manuals

Related Manuals