IXYS DSEI60-02A FRED Fast Recovery Epitaxial Diode Single Diode Instructions
- May 15, 2024
- IXYS
Table of Contents
IXYS DSEI60-02A FRED Fast Recovery Epitaxial Diode Single Diode
Instructions
Part number
Backside: cathode
Features / Advantages
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high frequency switching devices
- Ant saturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package
TO-247
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer- electronics.
Fast Diode | Ratings |
---|---|
Symbol | **Definition |
Conditions** | |
V RSM | max. non-repetitive reverse blocking voltage |
200 | |
V RRM | max. repetitive reverse blocking voltage |
200 | V |
I R | reverse current, drain current VR = 200 V |
VR = 160 V | TVJ = 125°C |
V F forward voltage drop | IF = 60 A |
IF = 120 A | |
IF = 60 A | TVJ 150 °C |
IF = 120 A | |
I **FAV** | average forward current TC = 115°Crectangular d |
= 0.5 | TVJ = 150°C |
V F0 r F | threshold voltage for power loss calculation only |
slope resistance | TVJ = 150°C |
4.3 | mΩ |
R thJC | thermal resistance junction to case |
R thCH | thermal resistance case to heatsink |
P tot | total power dissipation |
I FSM max. forward surge current t = 10 ms; (50 Hz),
sine; VR = 0 V TVJ = 45°C| | | 600| A
C J| junction capacitance VR = 200 V f = 1 MHz| TVJ = 25°C| | 170| |
pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 6.5| | A
| IF = 70 A; VR = 100 V| TVJ = 100 °C| 11| A
t rr| reverse recovery time -diF/dt = 400 A/µs| TVJ = 25 °C| | 20|
| ns
| | TVJ = 100 °C| 50| ns
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.|
max.| Unit
I **RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0.8| | 1.2| Nm
F C**| mounting force with clip| | 20| 120| N
**Product Marking
**
Ordering| Ordering Number| Marking on Product|
Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-02A| DSEI60-02A| Tube| 30| 471879
Outlines TO-247
Sym. | Inches min. max. | Millimeter min. max. |
---|---|---|
A | 0.185 | 0.209 |
A1 | 0.087 | 0.102 |
A2 | 0.059 | 0.098 |
D | 0.819 0.845 | 20.79 21.45 |
E | 0.610 0.640 | 15.48 16.24 |
E2 | 0.170 0.216 | 4.31 5.48 |
e | 0.430 BSC | 10.92 BSC |
L | 0.780 0.800 | 19.80 20.30 |
L1 | – 0.177 | – 4.49 |
Ø P | 0.140 0.144 | 3.55 3.65 |
Q | 0.212 0.244 | 5.38 6.19 |
S | 0.242 BSC | 6.14 BSC |
b | 0.039 | 0.055 |
b2 | 0.065 | 0.094 |
b4 | 0.102 | 0.135 |
c | 0.015 | 0.035 |
D1 | 0.515 – | 13.07 – |
D2 | 0.020 0.053 | 0.51 1.35 |
E1 | 0.530 – | 13.45 – |
Ø P1 | – 0.29 | – 7.39 |
Fast Diode
-
Fig. 1 Forward current IF versus max. forward voltage drop VF
-
Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt
-
Fig. 3 Typ. peak reverse current IRM versus -diF /dt
-
Fig. 4 Dynamic parameters Qr , IRM versus TV
-
Fig. 5 Typ. recovery time t rr versus -diF /dt
-
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt
-
Fig. 7 Transient thermal impedance junction to case
Constants for ZthJC calculation:
i| Rthi (K/W)| ti (s
1| 0.080| 0.00
2| 0.120| 0.0100
3| 0.100| 0.5000
4| 0.200| 0.0800
XYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
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