IXYS DSEI60-02A FRED Fast Recovery Epitaxial And Single Diode Owner’s Manual

June 1, 2024
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IXYS DSEI60-02A FRED Fast Recovery Epitaxial And Single Diode

IXYS-DSEI60-02A-FRED-Fast-Recovery-Epitaxial-And-Single-Diode-
product

Specifications

  • Part Number: DSEI60-02A
  • VRRM: 200 V
  • IFAV: 60 A
  • try: 20 ns
  • Package: TO-247
  • Features:
    • Planar passivated chips
    • Low leakage current
    • Very short recovery time
    • Improved thermal behaviour
    • Very low Irm-values
    • Very soft recovery behavior
    • Avalanche voltage rated for reliable operation
    • Soft reverse recovery for low EMI/RFI

Product Usage Instructions

Installation

  1. Ensure the device is powered off and disconnected from any power source.
  2. Identify the cathode side (backside) of the diode for correct orientation.
  3. Mount the diode securely in the TO-247 package to ensure proper heat dissipation.

Applications

This diode can be utilized in various applications including:

  • Antiparallel diode for high-frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Freewheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Maintenance

To ensure optimal performance, regularly check for any signs of damage or overheating. Replace if necessary.

FAQ

Q: What are the main advantages of the DSEI60-02A diode?

A: The diode offers low leakage current, very short recovery time, improved thermal behavior, and avalanche voltage rating for reliable operation.

Q: How should I handle the DSEI60-02A during installation?

A: Make sure to identify the cathode side for correct orientation and securely mount it in the TO-247 package.

Q: What are the recommended applications for this diode?

A: The diode can be used as an antiparallel diode for high-frequency switching devices, an antisaturation diode, a snubber diode, a free-wheeling diode, and rectifiers for switch mode power supplies.

PRODUCT INFORMATION

FRED

  • V RRM = 200
    • I FAV = 60 A
  • trr = 20 ns
  • Fast Recovery Epitaxial Diode Single Diode
  • Part number
    • DSEI60-02A

Features Advantages

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behavior
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
  • Power dissipation within the diode
  • Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high-frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Freewheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package: TO-247

  • Industry-standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Disclaimer Notice

  • The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their applications.
  • Littelfuse products are not designed for, and may not be used in, all applications. Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Fast Diode

Fast Diode Ratings
Symbol Definition Conditions
max. Unit
V RSM max. non-repetitive reverse blocking voltage
200
V RRM max. repetitive reverse blocking voltage
200 V
I R reverse current, drain current VR = 200 V
VR = 160 V TVJ = 125°C
V F ****forward voltage drop IF =      60 A
1.10 V
IF = 120 A
IF =      60 A TVJ     150 °C
IF = 120 A
I FAV average forward current TC = 115°C

rectangular         d = 0.5

| TVJ = 150°C| | | 60| A
V F0 r F| the threshold voltage for power loss calculation only slope resistance| TVJ = 150°C| | | 0.69| V
4.3| mΩ
R thJC| thermal resistance junction to case| | | | 0.5| K/W
R thCH| thermal resistance case to heatsink| | | 0.25| | K/W
Plot| total power dissipation| TC = 25°C| | | 250| W
I FSM **max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C| | | 600| A
C J| junction capacitance VR = 200 V  f = 1 MHz| TVJ = 25°C| | 170| | pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 6.5| | A
| IF =  70 A; VR = 100 V| TVJ = 100 °C| 11| A
t rr**| reverse recovery time -diF/dt = 400 A/µs| TVJ = 25 °C| | 20| | ns
| | TVJ = 100 °C| 50| ns

Package

Package TO- 247 Ratings
Symbol Definition Conditions
max. Unit
I RMS RMS current per terminal
T VJ virtual junction temperature
T op operation temperature
T stg storage temperature
Weight 6
M D mounting torque

F

C

| mounting force with clip| | 20| 120| N

Product Marking And Equivalent Circuits

Product Marking

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-02A| DSEI60-02A| Tube| 30| 471879

Equivalent Circuits for Simulation

IXYS-DSEI60-02A-FRED-Fast-Recovery-Epitaxial-And-Single-Diode-
fig-6

Outlines

Outlines TO-247IXYS-DSEI60-02A-FRED-Fast-Recovery-Epitaxial-And-Single-
Diode-fig-7

Sym. Inches min. max. Millimeter min. max.
A 0.185 0.209
A1 0.087 0.102
A2 0.059 0.098
D 0.819  0.845 20.79  21.45
E 0.610  0.640 15.48  16.24
E2 0.170  0.216 4.31     5.48
e 0.430 BSC 10.92 BSC
L 0.780  0.800 19.80  20.30
L1 –        0.177 –         4.49
Ø P 0.140  0.144 3.55     3.65
Q 0.212  0.244 5.38     6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055
b2 0.065 0.094
b4 0.102 0.135
c 0.015 0.035
D1 0.515       – 13.07       –
D2 0.020  0.053 0.51     1.35
E1 0.530       – 13.45          –
Ø P1 –        0.29 –         7.39

Fast Diode

IXYS-DSEI60-02A-FRED-Fast-Recovery-Epitaxial-And-Single-Diode-
fig-9

  • IXYS reserves the right to change limits, conditions, and dimensions.
  • Data according to IEC 60747and per semiconductor unless otherwise specified
  • © 2020 IXYS all rights reserved
  • Downloaded from Arrow.com.

References

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