IXYS DSEI60-02A FRED Fast Recovery Epitaxial And Single Diode Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
- IXYS DSEI60-02A FRED Fast Recovery Epitaxial And Single Diode
- Product Usage Instructions
- FAQ
- PRODUCT INFORMATION
- Features Advantages
- Disclaimer Notice
- Fast Diode
- Package
- Product Marking And Equivalent Circuits
- Outlines
- References
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)
IXYS DSEI60-02A FRED Fast Recovery Epitaxial And Single Diode
Specifications
- Part Number: DSEI60-02A
- VRRM: 200 V
- IFAV: 60 A
- try: 20 ns
- Package: TO-247
- Features:
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behavior
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
Product Usage Instructions
Installation
- Ensure the device is powered off and disconnected from any power source.
- Identify the cathode side (backside) of the diode for correct orientation.
- Mount the diode securely in the TO-247 package to ensure proper heat dissipation.
Applications
This diode can be utilized in various applications including:
- Antiparallel diode for high-frequency switching devices
- Antisaturation diode
- Snubber diode
- Freewheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Maintenance
To ensure optimal performance, regularly check for any signs of damage or overheating. Replace if necessary.
FAQ
Q: What are the main advantages of the DSEI60-02A diode?
A: The diode offers low leakage current, very short recovery time, improved thermal behavior, and avalanche voltage rating for reliable operation.
Q: How should I handle the DSEI60-02A during installation?
A: Make sure to identify the cathode side for correct orientation and securely mount it in the TO-247 package.
Q: What are the recommended applications for this diode?
A: The diode can be used as an antiparallel diode for high-frequency switching devices, an antisaturation diode, a snubber diode, a free-wheeling diode, and rectifiers for switch mode power supplies.
PRODUCT INFORMATION
FRED
- V RRM = 200
- I FAV = 60 A
- trr = 20 ns
- Fast Recovery Epitaxial Diode Single Diode
- Part number
- DSEI60-02A
Features Advantages
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behavior
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high-frequency switching devices
- Antisaturation diode
- Snubber diode
- Freewheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package: TO-247
- Industry-standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
- The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their applications.
- Littelfuse products are not designed for, and may not be used in, all applications. Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Fast Diode
| Fast Diode | Ratings |
|---|---|
| Symbol | Definition Conditions |
| max. | Unit |
| V RSM | max. non-repetitive reverse blocking voltage |
| 200 | |
| V RRM | max. repetitive reverse blocking voltage |
| 200 | V |
| I R | reverse current, drain current VR = 200 V |
| VR = 160 V | TVJ = 125°C |
| V F ****forward voltage drop | IF = 60 A |
| 1.10 | V |
| IF = 120 A | |
| IF = 60 A | TVJ 150 °C |
| IF = 120 A | |
| I FAV | average forward current TC = 115°C |
rectangular d = 0.5
| TVJ = 150°C| | | 60| A
V F0 r F| the threshold voltage for power loss calculation
only slope resistance| TVJ = 150°C| | | 0.69| V
4.3| mΩ
R thJC| thermal resistance junction to case| | | | 0.5| K/W
R thCH| thermal resistance case to heatsink| | | 0.25| | K/W
Plot| total power dissipation| TC = 25°C| | | 250| W
I FSM **max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C| | | 600| A
C J| junction capacitance VR = 200 V f = 1 MHz| TVJ = 25°C| | 170| |
pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 6.5| | A
| IF = 70 A; VR = 100 V| TVJ = 100 °C| 11| A
t rr**| reverse recovery time -diF/dt = 400 A/µs| TVJ = 25 °C| | 20|
| ns
| | TVJ = 100 °C| 50| ns
Package
| Package | TO- 247 | Ratings |
|---|---|---|
| Symbol | Definition | Conditions |
| max. | Unit | |
| I RMS | RMS current | per terminal |
| T VJ | virtual junction temperature | |
| T op | operation temperature | |
| T stg | storage temperature | |
| Weight | 6 | |
| M D | mounting torque |
F
C
| mounting force with clip| | 20| 120| N
Product Marking And Equivalent Circuits
Product Marking
Ordering| Ordering Number| Marking on Product|
Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-02A| DSEI60-02A| Tube| 30| 471879
Equivalent Circuits for Simulation
Outlines
Outlines TO-247
| Sym. | Inches min. max. | Millimeter min. max. |
|---|---|---|
| A | 0.185 | 0.209 |
| A1 | 0.087 | 0.102 |
| A2 | 0.059 | 0.098 |
| D | 0.819 0.845 | 20.79 21.45 |
| E | 0.610 0.640 | 15.48 16.24 |
| E2 | 0.170 0.216 | 4.31 5.48 |
| e | 0.430 BSC | 10.92 BSC |
| L | 0.780 0.800 | 19.80 20.30 |
| L1 | – 0.177 | – 4.49 |
| Ø P | 0.140 0.144 | 3.55 3.65 |
| Q | 0.212 0.244 | 5.38 6.19 |
| S | 0.242 BSC | 6.14 BSC |
| b | 0.039 | 0.055 |
| b2 | 0.065 | 0.094 |
| b4 | 0.102 | 0.135 |
| c | 0.015 | 0.035 |
| D1 | 0.515 – | 13.07 – |
| D2 | 0.020 0.053 | 0.51 1.35 |
| E1 | 0.530 – | 13.45 – |
| Ø P1 | – 0.29 | – 7.39 |
Fast Diode
- IXYS reserves the right to change limits, conditions, and dimensions.
- Data according to IEC 60747and per semiconductor unless otherwise specified
- © 2020 IXYS all rights reserved
- Downloaded from Arrow.com.