IXYS CS30-14io1 Thyristor Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
CS30-14io1 Thyristor
Single Thyristor
Part number
CS30-14io1
CS30-14io1 Thyristor
VRRM= 1400 V
ITAV = 30 A
VT = 1.3 V
Features / Advantages:
- Thyristor for line frequency
- Planar passivated chip
- Long-term stability
Applications:
- Line rectifying 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter
- AC power control
- Lighting and temperature control
Package : TO-247
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
| Thyristor | Ratings |
|---|---|
| Symbol | Definition |
| max. | Unit |
| VRSM/DSM | max. non-repetitive reverse/forward blocking voltage |
| 25°C | |
| VRRM/DRM | max. repetitive reverse/forward blocking voltage |
| 25°C | |
| I R/D | reverse current, drain current |
| 50 | µA |
| VR/D = 1400 V | |
| V T | forward voltage drop |
| I T = 60 A | |
| IT = 30 A | TVJ = 125 °C |
| I T = 60 A | |
| I TAV | average forward current |
| I T(RMS) | RMS forward current |
| VT0 r T | _threshold voltage for power loss calculation only slope |
| resistance_ | __ |
| 14.2 | mΩ |
| RthJC | thermal resistance junction to case |
| RthCH | thermal resistance case to heatsink |
| Ptot | total power dissipation |
| ITSM | max. forward surge current |
| 45°C | |
| t = 8,3 ms; (60 Hz), sine | VR = 0 V |
| t = 10 ms; (50 Hz), sine | TVJ = 150°C |
| t = 8,3 ms; (60 Hz), sine | VR = 0 V |
| I²t | value for fusing |
A²s
t = 8,3 ms; (60 Hz), sine| VR = 0 V| | | 770| A²s
t = 10 ms; (50 Hz), sine| TVJ = 150°C| | | 580| A²s
t = 8,3 ms; (60 Hz), sine| VR = 0 V| | | 555| A²s
C J| junction capacitance| VR = 400 V f = 1 MHz| TVJ = 25°C| | 16| |
pF
PGM| max. gate power dissipation| tP = 30 µs| TC = 150°C| | | 10|
W
tP = 300 µs| | 5| W
PGAV| average gate power dissipation| | | 0.5| W
(di/dt) cr| critical rate of rise of current| TVJ = 125 °C; f = 50 Hz
90 A| =| | | 150| A/µs
| tP = 200 µs; diG /dt = 0.3 A/µs;| repetitive, IT| | | |
IG = 0.3 A; V = ⅔ VDRM non-repet.,| IT = 30 A| | | 500| A/µs
(dv/dt) cr| critical rate of rise of voltage R GK = ∞; method 1
(linear voltage rise)| V = ⅔ VDRM| TVJ = 125°C| | | 1000| V/µs
VGT| gate trigger voltage| VD = 6 V| TVJ = 25°C| | | 1| V
| | | TVJ = -40°C| | | 1.2| V
IGT| gate trigger current| VD = 6 V| TVJ = 25°C| 55| mA
| | | TVJ = -40°C| 80| mA
VGD| gate non-trigger voltage| VD = ⅔ VDRM| TVJ = 125°C| | | 0.2| V
IGD| gate non-trigger current| | | 5| mA
I L| latching current IG = 0.3 A; diG/dt = 0.3 A/µs| t p = °C| 10 µs
TVJ = 25| | | 150| mA
I H| holding current| VD = 6 V RGK = ∞| TVJ = 25 °C| | | 100| mA
tgd| gate controlled delay time IG = 0.3 A; diG/dt = 0.3 A/µs| VD =
½ VDRM| TVJ = 25 °C| | | 2| µs
t q| turn-off time di/dt = 15 A/µs dv/dt = 20 V/µs tp = 200 µs| VR
= 100 V; IT = 30A; V = ⅔ VDRM TVJ 125 °C| | 150| | µs
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.|
max.| Unit
I **RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0.8| | 1.2| Nm
F C**| mounting force with clip| | 20| 120| N
Ordering| Ordering Number| Marking on Product|
Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CS30-14io1| CS30-14io1| Tube| 30| 466573
Similar Part| Package| Voltage class
---|---|---
CS30-12io1| TO-247AD (3)| 1200
CS30-16io1| TO-247AD (3)| 1600
Equivalent Circuits for Simulation| | on die level| T VJ =
175 °C
---|---|---|---
| Fast Diode| |
V0 max threshold voltage| 0.87| | V
R0 max slope resistance | 11.7| | mΩ
Outlines TO-247
| Sym. | Inches | Millimeter |
|---|---|---|
| **** | **** min. | **** max. |
| A | 0.185 | 0.209 |
| A1 | 0.087 | 0.102 |
| A2 | 0.059 | 0.098 |
| D | 0.819 | 0.845 |
| E | 0.610 | 0.640 |
| E2 | 0.170 | 0.216 |
| e | 0.215 BSC | 5.46 BSC |
| L | 0.780 | 0.800 |
| L1 | – | 0.177 |
| Ø P | 0.140 | 0.144 |
| Q | 0.212 | 0.244 |
| S | 0.242 BSC | 6.14 BSC |
| b | 0.039 | 0.055 |
| b2 | 0.065 | 0.094 |
| b4 | 0.102 | 0.135 |
| c | 0.015 | 0.035 |
| D1 | 0.515 | – |
| D2 | 0.020 | 0.053 |
| E1 | 0.530 | – |
| Ø P1 | – | 0.29 |
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
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