IXYS CS30-14io1 Thyristor Owner’s Manual

June 1, 2024
IXYS

CS30-14io1 Thyristor

Single Thyristor
Part number
CS30-14io1

CS30-14io1 Thyristor

VRRM= 1400 V
ITAV = 30 A
VT  = 1.3 V

Features / Advantages:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability

Applications:

  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control

Package : TO-247

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Thyristor Ratings
Symbol Definition
max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage
25°C
VRRM/DRM max. repetitive reverse/forward blocking voltage
25°C
I R/D reverse current, drain current
50 µA
VR/D = 1400 V
V T forward voltage drop
I T =     60 A
IT =     30 A TVJ = 125 °C
I T =     60 A
I TAV average forward current
I T(RMS) RMS forward current
VT0 r T _threshold voltage for power loss calculation only slope
resistance_ __
14.2 mΩ
RthJC thermal resistance junction to case
RthCH thermal resistance case to heatsink
Ptot total power dissipation
ITSM max. forward surge current
45°C
t = 8,3 ms; (60 Hz), sine VR = 0 V
t = 10 ms; (50 Hz), sine TVJ = 150°C
t = 8,3 ms; (60 Hz), sine VR = 0 V
I²t value for fusing

A²s
t = 8,3 ms; (60 Hz), sine| VR = 0 V| | | 770| A²s
t = 10 ms; (50 Hz), sine| TVJ = 150°C| | | 580| A²s
t = 8,3 ms; (60 Hz), sine| VR = 0 V| | | 555| A²s
C J| junction capacitance| VR = 400 V f = 1 MHz| TVJ = 25°C| | 16| | pF
PGM| max. gate power dissipation| tP =   30 µs| TC   = 150°C| | | 10| W
tP = 300 µs| | 5| W
PGAV| average gate power dissipation| | | 0.5| W
(di/dt) cr| critical rate of rise of current| TVJ = 125 °C; f = 50 Hz 90 A| =| | | 150| A/µs
| tP = 200 µs; diG /dt = 0.3 A/µs;| repetitive, IT| | | |
IG =  0.3 A; V = ⅔ VDRM  non-repet.,| IT =   30 A| | | 500| A/µs
(dv/dt) cr| critical rate of rise of voltage R GK = ∞; method 1 (linear voltage rise)| V = ⅔ VDRM| TVJ = 125°C| | | 1000| V/µs
VGT| gate trigger voltage| VD = 6 V| TVJ = 25°C| | | 1| V
| | | TVJ = -40°C| | | 1.2| V
IGT| gate trigger current| VD = 6 V| TVJ = 25°C| 55| mA
| | | TVJ = -40°C| 80| mA
VGD| gate non-trigger voltage| VD = ⅔ VDRM| TVJ = 125°C| | | 0.2| V
IGD| gate non-trigger current| | | 5| mA
I L| latching current IG =  0.3 A; diG/dt = 0.3 A/µs| t p = °C| 10 µs TVJ = 25| | | 150| mA
I H| holding current| VD = 6 V RGK = ∞| TVJ = 25 °C| | | 100| mA
tgd| gate controlled delay time IG =  0.3 A; diG/dt =  0.3 A/µs| VD = ½ VDRM| TVJ = 25 °C| | | 2| µs
t q| turn-off time di/dt = 15 A/µs dv/dt =    20 V/µs tp = 200 µs| VR = 100 V; IT = 30A; V = ⅔ VDRM TVJ 125 °C| | 150| | µs
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.| max.| Unit
I **RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0.8| | 1.2| Nm
F C**| mounting force with clip| | 20| 120| N

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CS30-14io1| CS30-14io1| Tube| 30| 466573
Similar Part| Package| Voltage class
---|---|---
CS30-12io1| TO-247AD (3)| 1200
CS30-16io1| TO-247AD (3)| 1600
Equivalent Circuits for Simulation| | on die level| T VJ   = 175 °C
---|---|---|---
| Fast Diode| |
V0 max threshold voltage| 0.87| | V
R0 max slope resistance
| 11.7| | mΩ

Outlines TO-247

IXYS CS30-14io1 Thyristor - Fig 3

Sym. Inches Millimeter
**** **** min.     ****  max.
A 0.185 0.209
A1 0.087 0.102
A2 0.059 0.098
D 0.819 0.845
E 0.610 0.640
E2 0.170 0.216
e 0.215 BSC 5.46 BSC
L 0.780 0.800
L1 0.177
Ø P 0.140 0.144
Q 0.212 0.244
S 0.242 BSC 6.14 BSC
b 0.039 0.055
b2 0.065 0.094
b4 0.102 0.135
c 0.015 0.035
D1 0.515
D2 0.020 0.053
E1 0.530
Ø P1 0.29

Thyristor

IXYS CS30-14io1 Thyristor - Fig 4

IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
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References

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