DSEI2x61-02A FRED Fast Recovery Epitaxial Diode

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Product Information

Specifications

• Part Number: DSEI2x61-02A
• VRSM: 200 V
• VRRM: 2x 60 A
• IR: 3.7 mA
• VF: 0.69 V
• IFAV: 180 W
• t rr: 20 ns
• Package: SOT-227B (minibloc)
• Isolation Voltage: 3000 V~

Features and Advantages

• Planar passivated chips
• Low leakage current
• Very short recovery time
• Improved thermal behavior
• Very low Irm-values
• Very soft recovery behavior
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI

Applications

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free-wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Package Details

• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0 standards
• Base plate: Copper internally DCB isolated
• Advanced power cycling capabilities

Disclaimer Notice

Information provided is believed to be accurate and reliable.
Users should evaluate the suitability of each product for their
applications. Products may not be suitable for all applications.
Refer to the complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.

Data Information

Data according to IEC 60747 and per semiconductor unless
otherwise specified.

Product Usage Instructions

Installation

1. Ensure proper isolation from other components.
2. Tighten mounting torque to 1.1 Nm.
3. Check creepage and clearance distances as per
   specifications.

Usage

1. Connect the diode as per the application requirements.
2. Avoid exceeding the specified ratings to prevent damage.
3. Monitor the thermal behavior during operation.

Maintenance

1. Regularly inspect for any signs of damage or wear.
2. Replace the diode if any irregularities are observed.
3. Follow recommended storage conditions when not in use.

FAQs

Q: What is the maximum RMS current rating for the DSEI2x61-02A

diode?

A: The maximum RMS current rating is 150 A per terminal.

Q: What is the isolation voltage of the diode?

A: The isolation voltage is 3000 V~.

Q: What is the recovery time of the diode?

A: The reverse recovery time is 20 ns.

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FRED
Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs
Part number
DSEI2x61-02A

2

1

3

4

DSEI2x61-02A

VRRM I FAV t rr

= 200 V = 2x 60 A = 20 ns

Backside: isolated

Features / Advantages:
Planar passivated chips Low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces:
– Power dissipation within the diode – Turn-on loss in the commutating switch

Applications:
Antiparallel diode for high frequency switching devices
Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power
supplies (SMPS) Uninterruptible power supplies (UPS)

Package: SOT-227B (minibloc)
Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper
internally DCB isolated Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Downloaded from Arrow.com.

DSEI2x61-02A

Fast Diode

Symbol VRSM VRRM IR VF
I FAV

Definition

Conditions

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

reverse current, drain current forward voltage drop
average forward current

VR = 200 V VR = 160 V IF = 60 A IF = 120 A IF = 60 A IF = 120 A TC = 100°C rectangular

d = 0.5

VF0 rF R thJC R thCH Ptot I FSM CJ I RM
t rr

threshold voltage slope resistance

for power loss calculation only

thermal resistance junction to case

thermal resistance case to heatsink

total power dissipation max. forward surge current junction capacitance max. reverse recovery current

t = 10 ms; (50 Hz), sine; VR = 0 V VR = 200 V f = 1 MHz

reverse recovery time

IF = 70 A; VR = 100 V -diF/dt = 400 A/µs

TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C

Ratings
min. typ. max. Unit 200 V 200 V 50 µA 11 mA 1.07 V 1.25 V 0.91 V 1.15 V 60 A

TVJ = 150°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100 °C

0.69 V

3.7 m

0.7 K/W

0.10

K/W

180 W

950 A

170

pF

6.5

A

11

A

20

ns

50

ns

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

DSEI2x61-02A

Package SOT-227B (minibloc)

Ratings

Symbol I RMS TVJ Top Tstg Weight

Definition
RMS current virtual junction temperature operation temperature storage temperature

Conditions
per terminal

min. typ. max. Unit 150 A

-40

150 °C

-40

125 °C

-40

150 °C

30

g

MD M
T
d Spp/App d Spb/Apb V
ISOL

mounting torque

1.1

terminal torque

1.1

creepage distance on surface | striking distance through air

terminal to terminal 10.5 3.2 terminal to backside 8.6 6.8

isolation voltage

t = 1 second t = 1 minute

50/60 Hz, RMS; IISOL 1 mA

3000 2500

1.5 Nm 1.5 Nm
mm mm
V V

Logo
Date Code

Product Marking

Part

Number

XXXXX ®

UL

yywwZ

123456

Location Lot#

Ordering Standard

Ordering Number DSEI2x61-02A

Marking on Product DSEI2x61-02A

Delivery Mode Tube

Quantity Code No.

10

469769

Equivalent Circuits for Simulation

I V0

R0

V 0 max R0 max

threshold voltage slope resistance *

Fast Diode
0.69
1.8

• on die level

T VJ = 150°C
V m

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Outlines SOT-227B (minibloc)

DSEI2x61-02A

2

1

3

4

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

DSEI2x61-02A

Fast Diode

120

0.8

100
80 IF 60 [A] 40
20

TVJ = 150°C 100°C
25°C

IF = 140 A

0.6

70 A

35 A

Qr 0.4
[µC]

TVJ = 100°C VR = 100 V

0.2

0

0.0

0.4

0.8

1.2

VF [V]

Fig. 1 Forward current IF versus max. forward voltage drop VF

0.0 10

100

1000

-diF /dt [A/µs]

Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt

30
25
20 IRM
15 [A] 10
5

IF = 140 A 70 A 35 A
TVJ = 100°C VR = 100 V

0 0 200 400 600 800 1000
-diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt

1.6

1.4

1.2

1.0 Kf
0.8
0.6 IRM

0.4 Qrr

0.2 0

40

80 120 160

TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ

70 TVJ = 100°C VR = 100 V
60

trr 50

[ns] 40

IF = 140 A 70 A 35 A

30 0 200 400 600 800 1000
-diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt

5

2.5

TVJ = 100°C

VR = 100 V

4

2.0

VFR 3
[V] 2 VFR
1

1.5
tfr 1.0 tfr [µs] 0.5

0

0.0

0

200 400 600 800

-diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt

0.8

0.6 ZthJC
0.4 [K/W] 0.2

Constants for ZthJC calculation:

i Rthi (K/W)

ti (s)

1 0.120

0.010

2 0.045

0.002

3 0.105

0.050

4 0.160

0.050

5 0.270

0.350

0.0 1

10

100

1000

t [ms]

Fig. 7 Transient thermal impedance junction to case

10000

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Downloaded from Arrow.com.

References

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