IXYS DSEP29-06AS HiPerFRED High Performance Fast Recovery Diode Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
DSEP29-06AS
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP29-06AS
Marking on Product: DSEP29-06AS
DSEP29-06AS HiPerFRED High Performance Fast Recovery Diode
VRRM= 600 V
IFAV = 30 A
trr = 35 ns
Features / Advantages:
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
– Power dissipation within the diode
– Turn-on loss in the commutating switch
Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
Fast Diode | Ratings |
---|---|
Symbol | **Definition |
Conditions** | |
V RSM | max. non-repetitive reverse blocking voltage |
600 | |
V RRM | max. repetitive reverse blocking voltage |
600 | V |
I R | reverse current, drain current |
µA
| | VR = 600 V| TVJ = 150°C| | | 1| mA
V F| forward voltage drop| IF = 30 A
IF = 60 A| TVJ = 25°C| | | 1.61
1.94| V
V
IF = 30 A| TVJ 150 °C| | | 1.26| V
IF = 60 A| | | | 1.56| V
I **FAV| average forward current TC = 135°C
rectangular d = 0.5| TVJ = 175°C| | | 30| A
V F0 r F| threshold voltage for power loss calculation only
slope resistance| TVJ = 175°C| | | 0.91| V
9.4| mΩ
R thJC| thermal resistance junction to case| | | | 0.9| K/W
R thCH| thermal resistance case to heatsink| | | 0.25| | K/W
P tot| total power dissipation| __| TC = 25°C| | | 165| W
I FSM| max. forward surge current
= 0 V TVJ = 45°C| t = 10 ms; (50 Hz), sine; VR| | | | 250| A
C J| junction capacitance| VR = 400 V f = 1 MHz| TVJ = 25°C| | 26| |
pF
I RM| max. reverse recovery current| __| TVJ = 25 °C| | 6| | A
| | IF = 30 A; VR = 300 V| TVJ = 100 °C| | 10| | A
t rr**| reverse recovery time| -diF/dt = 200 A/µs| TVJ = 25 °C| |
35| | ns
| | | TVJ = 100 °C| | 100| | ns
Package TO-263 (D2Pak)
Package | TO-263 (D2Pak) | Ratings |
---|---|---|
Symbol | Definition | Conditions |
max. | Unit | |
I **RMS** | RMS current | per terminal |
T VJ | virtual junction temperature | |
T op | operation temperature | |
T stg | storage temperature | |
Weight | 1.5 | |
F C | mounting force with clip |
Ordering| Ordering Number| Marking on Product|
Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEP29-06AS-TRL| DSEP29-06AS| Tape & Reel| 800| 499498
Alternative| DSEP29-06AS-TUB| DSEP29-06AS| Tube| 50| 473537
Similar Part| Package| Voltage class
---|---|---
DSEP29-06A| TO-220AC (2)| 600
DSEP30-06A| TO-247AD (2)| 600
DSEP30-06B| TO-247AD (2)| 600
DSEP30-06BR| ISOPLUS247 (2)| 600
DHG30I600PA| TO-220AC (2)| 600
---|---|---
DHG30I600HA| TO-247AD (2)| 600
DHG30IM600PC| TO-263AB (D2Pak) (2)| 600
Equivalent Circuits for Simulation| | on die level| T VJ = 175 °C
---|---|---|---
| Fast Diode| |
V0 max threshold voltage| 0.91| | V
R0 max slope resistance | 6.1| | mΩ
Outlines TO-263 (D2Pak)
Dim. | Millimeter | Inches |
---|---|---|
min | max | min |
A | 4.06 | 4.83 |
A1 | typ. 0.10 | typ. 0.004 |
A2 | 2.41 | 0.095 |
b | 0.51 | 0.99 |
b2 | 1.14 | 1.40 |
c | 0.40 | 0.74 |
c2 | 1.14 | 1.40 |
D | 8.38 | 9.40 |
D1 | 8.00 | 8.89 |
D2 | 2.5 | 0.098 |
E | 9.65 | 10.41 |
E1 | 6.22 | 8.50 |
e | 2,54 BSC | 0,100 BSC |
e1 | 4.28 | 0.169 |
H | 14.61 | 15.88 |
L | 1.78 | 2.79 |
L1 | 1.02 | 1.68 |
W | typ. 0.02 | 0.040 |
All dimensions conform with and/or within JEDEC standard.
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
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