IXYS DSEP29-06A HiPerFRED High Performance Fast Recovery Diode Owner’s Manual

DSEP29-06A
HiPerFRED

Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
Part number
DSEP29-06A

DSEP29-06A HiPerFRED High Performance Fast Recovery Diode

VRRM = 600 V
IFAV = 30 A
trr = 35 ns

Features / Advantages:

• Planar passivated chips
• Very low leakage current
• Very short recovery time
• Improved thermal behaviour
• Very low Irm-values
• Very soft recovery behaviour
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low Irm reduces:
  – Power dissipation within the diode
  – Turn-on loss in the commutating switch

Applications:

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Package: TO-220

• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

µA
| | VR = 600 V| TVJ = 150°C| | | 1| mA
V F| forward voltage drop| IF = 30 A| TVJ = 25°C| | | 1,61| V
IF = 60 A| | 1,94| V
IF =  30 A| TVJ  150°C| | | 1,26| V
IF =  60 A| | 1,56| V
I **FAV| average forward current rectangular  d = 0.5| TC = 135°C| TVJ = 175°C| | | 30| A
V F0| threshold voltage| __for power loss calculation only| TVJ = 175°C| | | 0,91| V
rF| slope resistance| | | | 9,4| mΩ
R thJC| thermal resistance junction to case| __| | | | 0,9| K/W
R thCH| thermal resistance case to heatsink| | | 0,5| | K/W
P tot| total power dissipation| __| TC = 25°C| | | 165| W
I FSM| max. forward surge current| t = 10 ms; (50 Hz), sine; VR = 0 V| TVJ = 45°C| | | 250| A
C J| junction capacitance| VR = 400V f = 1 MHz| TVJ = 25°C| | 26| | pF
I RM| max. reverse recovery current| IF = 30 A; VR = 300 V| TVJ = 25 °C| | 6| | A
TVJ = 100°C| | 10| | A
t rr| reverse recovery time| -diF/dt = 200 A/µs| TVJ = 25 °C| | 35| | ns
TVJ = 100°C| | 100| | ns
Package| TO-220| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.| max.| Unit
I ****RMS| RMS current| per terminal| | | 35| A
T VJ| virtual junction temperature| | -55| | 175| °C
T op| operation temperature| | -55| | 150| °C
T stg| storage temperature| | -55| | 150| °C
Weight| | 2| | g
M D| mounting torque| | 0,4| | 0,6| Nm
F C**| mounting force with clip| | 20| 60| N

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEP29-06A| DSEP29-06A| Tube| 50| 474819
Similar Part| Package| Voltage class
---|---|---
DSEP29-06AS| TO-263AB (D2Pak) (2)| 600
DSEP30-06A| TO-247AD (2)| 600
DSEP30-06B| TO-247AD (2)| 600
DSEP30-06BR| ISOPLUS247 (2)| 600
DHG30I600PA| TO-220AC (2)| 600
---|---|---
DHG30I600HA| TO-247AD (2)| 600
DHG30IM600PC| TO-263AB (D2Pak) (2)| 600

Equivalent Circuits for Simulation

• on die level

| Fast Diode| TVJ= 175 °C
---|---|---
V 0 max threshold voltage| 0,91| V
R 0 max slope resistance *| 6,1| mΩ

Outlines TO-220

Fast Diode

IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20220610d
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References

• Product Disclaimer - Littelfuse

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