IXYS DSEI8-06AS FRED Fast Recovery Epitaxial Diode Single Diode Owner’s Manual

DSEI8-06AS
FRED

Single Diode
Fast Recovery Epitaxial Diode
Part number
DSEI8-06AS
Marking on Product: DSEI8-06AS

DSEI8-06AS FRED Fast Recovery Epitaxial Diode Single Diode

VRRM = 600 V
IFAV = 8 A
trr = 35 ns

Features / Advantages:

• Planar passivated chips
• Low leakage current
• Very short recovery time
• Improved thermal behaviour
• Very low Irm-values
• Very soft recovery behaviour
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low Irm reduces:
  – Power dissipation within the diode
  – Turn-on loss in the commutating switch

Applications:

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Package: TO-263 (D2Pak)

• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

µA
VR = 480 V| TVJ = 125°C| | | 1.5| mA
V F| forward voltage drop| IF =  8 A| TVJ = 25°C| | | 1.47| V
IF = 16 A| | | | 1.66| V
IF = 8 A| TVJ  150 °C| | | 1.33| V
IF = 16 A| | | | 1.60| V
I **FAV| average forward current rectangular d = 0.5| TC = 115°C| TVJ = 150°C| | | 8| A
V F0
r F| threshold voltage
slope resistance| ____f or power loss calculation only| TVJ = 150°C| | | 1.09| V
31| mΩ
R thJC| thermal resistance junction to case| | | | 2.5| K/W
R thCH| thermal resistance case to heatsink| | | 0.25| | K/W
P tot| total power dissipation| TC = 25°C| | | 50| W
I FSM| max. forward surge current
= 0 V  TVJ = 45°C| t = 10 ms; (50 Hz), sine; VR| | | | 100| A
C J| junction capacitance| VR = 400 V f = 1 MHz| TVJ = 25°C| | 5| | pF
I RM| max. reverse recovery current| IF =  8 A; VR = 350 V
-diF/dt = 100 A/µs| TVJ = 25 °C| | 2.5| | A
t rr| reverse recovery time| TVJ = 100 °C| | 4| | A
TVJ = 25 °C| | 60| | ns
| | TVJ = 100 °C| | 100| | ns
Package| TO-263 (D2Pak)| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.| max.| Unit
I ****RMS| RMS current| per terminal| | | 20| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 1.5| | g
F C**| mounting force with clip| | 20| | 60| N

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI8-06AS-TRL| DSEI8-06AS| Tape & Reel| 800| 485837
Alternative| DSEI8-06AS-TUB| DSEI8-06AS| Tube| 50| 468517
Similar Part| Package| Voltage class
---|---|---
DSEI8-06A| TO-220AC (2)| 600
DFE10I600PM| TO-220ACFP (2)| 600

Equivalent Circuits for Simulation

• on die level

| Fast Diode| TVJ= 150 °C
---|---|---
V 0 max threshold voltage| 1.09| V
R 0 max slope resistance *| 28| mΩ

Outlines TO-263 (D2Pak)

All dimensions conform with and/or within JEDEC standard.

Fast Diode

IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
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References

• Product Disclaimer - Littelfuse

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