IXYS DSEP60-06AT HiPerFRED High Performance Fast Recovery Diode Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
IXYS DSEP60-06AT HiPerFRED High-Performance Fast Recovery Diode
Specifications
- Part Number: DSEP60-06AT
- Marking on Product: DSEP60-06AT
- VRRM: 600 V
- IFAV: 60 A
- trr: 35 ns
Features
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behavior
- Very low Irm-values
- Very soft recovery behavior
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high-frequency switching devices
- Antisaturation diode
- Snubber diode
- Free-wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package Information
Package: TO-268AA (D3Pak)
- Industry-standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Product Usage Instructions
Installation
- Ensure proper grounding before installation.
- Mount the diode securely in the designated location.
- Connect the diode according to the circuit diagram provided.
Maintenance
Regularly inspect the diode for any signs of damage or overheating. Replace if any abnormalities are observed.
Safety Precautions
- Always handle the diode with care to prevent static discharge.
- Avoid exceeding the specified voltage and current ratings.
- Do not operate the diode in environments with extreme temperatures outside the specified range.
FAQs
Q: What are the typical applications of the DSEP60-06AT diode?
A: The diode is commonly used as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, free-wheeling diode, rectifiers in SMPS, and UPS.
Q: How should I store the DSEP60-06AT diode when not in use?
A: Store the diode in its original packaging in a dry and cool environment away from direct sunlight and moisture.
PRODUCT INFORMATION
HiPerFRED
- VRRM: 600 V
- IFAV: 60 A
- trr: 35 ns
- High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode
- Part number
- DSEP60-06AT
- Marking on Product: DSEP60-06AT
Features Advantages
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behavior
- Very low Irm-values
- Very soft recovery behavior
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high-frequency switching devices
- Antisaturation diode
- Snubber diode
- Freewheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
- Package: TO-268AA (D3Pak)
- Industry-standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
- Disclaimer Notice
- The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their applications.
- Littelfuse products are not designed for, and may not be used in, all applications.
- Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
| Fast Diode | Ratings |
|---|---|
| Symbol | Definition Conditions |
| max. | Unit |
| V RSM | max. non-repetitive reverse blocking voltage |
| = 25°C | |
| V RRM | max. repetitive reverse blocking voltage |
| 600 | V |
| I R | reverse current, drain current __ VR = 600 V |
| 650 | |
| VR = 600 V | TVJ = 150°C |
| V F ****forward voltage drop | IF = 60 A |
| 2,04 | V |
| IF = 120 A | |
| IF = 60 A | TVJ 150 °C |
| IF = 120 A | |
| I FAV | average forward current __ TC = 130°C |
rectangular d = 0.5
| TVJ = 175 °C| | | 60| A
V F0 r F| threshold voltage slope resistance for power loss
calculation only| TVJ = 175 °C| | | 0,95| V
5| mΩ
R thJC| thermal resistance junction to case| | | | 0,45| K/W
R thCH| thermal resistance case to heatsink| | | 0,15| | K/W
Plot| total power dissipation| TC = 25°C| | | 330| W
I FSM **max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C| | | 600| A
C J| junction capacitance VR = 400 V f = 1 MHz| TVJ = 25°C| | 67| |
pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 8| | A
| IF = 60 A; VR = 300 V| TVJ = 100 °C| 13| A
t rr| reverse recovery time -diF/dt = 200 A/µs| TVJ = 25 °C| | 35|
| ns
| | TVJ = 100 °C| 110| ns
Package| TO-268AA (D3Pak)| Ratings
---|---|---
Symbol| Definition| Conditions| min.| Typ.|
max.| Unit
I RMS| RMS current| per terminal 1)| | | 70| A
T VJ| virtual junction temperature| | -55| | 175| °C
T op| operation temperature| | -55| | 150| °C
T stg| storage temperature| | -55| | 150| °C
Weight| | 5| | g
F C**| mounting force with clip| | 20| | 120| N
IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In the case of (1) and a product with multiple pins for one chip potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Ordering| Ordering Number| Marking on Product| Delivery
Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEP60-06AT-TUB| DSEP60-06AT| Tube| 30| 509748
Similar Part| Package| Voltage class
---|---|---
DSEP60-06A| TO-247AD (2)| 600
DHG60I600HA| TO-247AD (2)| 600
DPH30IS600HI| ISOPLUS247 (2)| 600
Outlines
Outlines TO-268AA (D3Pak)
| Dim. | Millimeter | Inches |
|---|---|---|
| min | max | min |
| A | 4.90 | 5.10 |
| A1 | 2.70 | 2.90 |
| A2 | 0.02 | 0.25 |
| b | 1.15 | 1.45 |
| b2 | 1.90 | 2.10 |
| C | 0.40 | 0.65 |
| C2 | 1.45 | 1.60 |
| D | 13.80 | 14.00 |
| D1 | 12.40 | 12.70 |
| E | 15.85 | 16.05 |
| E1 | 13.30 | 13.60 |
| e | 5.45 BSC | 0.215 BSC |
| H | 18.70 | 19.10 |
| L | 2.40 | 2.70 |
| L1 | 1.20 | 1.40 |
| L2 | 1.00 | 1.15 |
| L3 | 0.25 BSC | 0.100 BSC |
| L4 | 3.80 | 4.10 |
Fast Diode
- IXYS reserves the right to change limits, conditions, and dimensions.
- Data according to IEC 60747and per semiconductor unless otherwise specified
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