IXYS DSEI25-06AS FRED Fast Recovery Epitaxial Diode Owner’s Manual

June 1, 2024
IXYS

DSEI25-06AS FRED Fast Recovery Epitaxial Diode

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Specifications:

  • Part number: DSEI25-06AS
  • Marking on Product: DSEI25-06AS
  • VRRM: 600 V
  • I FAV: 25 A
  • t rr: 35 ns
  • Backside: cathode

Product Information:

The FRED (Fast Recovery Epitaxial Diode) Single Diode with part
number DSEI25-06AS is a high-performance diode with various
features and advantages. It is designed for applications requiring
fast recovery times and low leakage currents.

Features / Advantages:

  • Planar passivated chips
  • Very short recovery time
  • Improved thermal behavior
  • Low leakage current
  • Soft recovery behavior
  • Avalanche voltage rated for reliable operation
  • Low Irm-values

Applications:

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package:

The product comes in a TO-263 (D2Pak) package, which is an
industry standard outline and RoHS compliant.

Product Usage Instructions:

Installation:

  1. Ensure the cathode side of the diode is correctly oriented
    according to the marking on the product.

  2. Mount the diode securely in the circuit, following standard
    industry practices for component installation.

Circuit Connection:

Connect the diode as per the application requirements, ensuring
proper polarity and connections to achieve the desired
functionality.

Operating Conditions:

  • Avoid exceeding the maximum ratings specified for forward
    current (I FAV) and reverse voltage (VRRM).

  • Maintain suitable thermal management to prevent overheating
    during operation.

Frequently Asked Questions (FAQ):

Q: What are the typical applications of the DSEI25-06AS

diode?

A: The DSEI25-06AS diode is commonly used as an antiparallel
diode for high frequency switching devices, antisaturation diode,
snubber diode, free wheeling diode, and in rectifiers for switch
mode power supplies (SMPS) and uninterruptible power supplies
(UPS).

Q: What is the package type of the DSEI25-06AS diode?

A: The DSEI25-06AS diode comes in a TO-263 (D2Pak) package,
which is an industry standard outline and RoHS compliant.

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FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI25-06AS
Marking on Product: DSEI25-06AS

1 3

2/4

DSEI25-06AS

VRRM =

I FAV

=

t rr

=

600 V 25 A 35 ns

Backside: cathode

Features / Advantages:
Planar passivated chips Low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces:
– Power dissipation within the diode – Turn-on loss in the commutating switch

Applications:
Antiparallel diode for high frequency switching devices
Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power
supplies (SMPS) Uninterruptible power supplies (UPS)

Package: TO-263 (D2Pak)
Industry standard outline RoHS compliant Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20201111c

Downloaded from Arrow.com.

DSEI25-06AS

Fast Diode

Symbol VRSM VRRM IR VF
I FAV

Definition

Conditions

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

reverse current, drain current forward voltage drop
average forward current

VR = 600 V VR = 480 V IF = 25 A IF = 50 A IF = 25 A IF = 50 A TC = 100°C rectangular

d = 0.5

VF0 rF R thJC R thCH Ptot I FSM CJ I RM
t rr

threshold voltage slope resistance

for power loss calculation only

thermal resistance junction to case

thermal resistance case to heatsink

total power dissipation max. forward surge current junction capacitance max. reverse recovery current

t = 10 ms; (50 Hz), sine; VR = 0 V VR = 400 V f = 1 MHz

reverse recovery time

IF = 30 A; VR = 300 V -diF/dt = 200 A/µs

TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C

Ratings
min. typ. max. Unit 600 V 600 V 100 µA 6 mA 1.51 V 1.73 V 1.37 V 1.66 V 25 A

TVJ = 150°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 125 °C

1.10 V

10.6 m

1.2 K/W

0.50

K/W

105 W

240 A

20

pF

9

A

14

A

50

ns

120

ns

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201111c

Package TO-263 (D2Pak)

Symbol I RMS TVJ Top Tstg Weight

Definition
RMS current virtual junction temperature operation temperature storage temperature

Conditions
per terminal 1)

FC

mounting force with clip

  1. IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.

Product Marking

Part Number
Logo Date Code
Location Lot#

XXXXXXXXX
IXYS yywwZ
123456

DSEI25-06AS

Ratings

min. typ. max. Unit 35 A

-40

150 °C

-40

125 °C

-40

150 °C

1.5

g

20

60 N

Ordering Standard Alternative

Ordering Number DSEI25-06AS-TRL DSEI25-06AS-TUB
Similar Part DSEI25-06A DFE25I600HA

Marking on Product DSEI25-06AS DSEI25-06AS

Delivery Mode Tape & Reel Tube

Quantity Code No.

800

520750

50

525170

Package TO-220AC (2) TO-247AD (2)

Voltage class 600 600

Equivalent Circuits for Simulation

I V0

R0

V 0 max R0 max

threshold voltage slope resistance *

Fast Diode
1.1
7.5

  • on die level

T VJ = 150°C
V m

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201111c

DSEI25-06AS

Outlines TO-263 (D2Pak)

W

A

c2

L1

E

D

A1
123

H

Supplier Option
4

D1

L2

L

2x e

10.92 (0.430)

c

3x b2

2x b

mm (Inches)

E1

9.02 (0.355)

1.78 (0.07)

Dim. Millimeter min max

Inches min max

A 4.06 4.83 0.160 0.190

A1 typ. 0.10

typ. 0.004

A2

2.41

0.095

b 0.51 0.99 0.020 0.039

b2 1.14 1.40 0.045 0.055

c 0.40 0.74 0.016 0.029

c2 1.14 1.40 0.045 0.055

D 8.38 9.40 0.330 0.370

D1 8.00 8.89 0.315 0.350

D2

2.5

0.098

E 9.65 10.41 0.380 0.410

E1 6.22 8.50 0.245 0.335

e

2,54 BSC

0,100 BSC

e1

4.28

0.169

H 14.61 15.88 0.575 0.625

L 1.78 2.79 0.070 0.110

L1 1.02 1.68 0.040 0.066

W

typ. 0.02

0.040

typ. 0.0008

0.002

All dimensions conform with

and/or within JEDEC standard.

3.81 (0.150)

3.05 (0.120)

2.54 (0.100)

Recommended min. foot print

1 2/4
3

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201111c

DSEI25-06AS

Fast Diode
60

50

40 IF
30 [A] 20
10

TVJ = 25°C = 100°C = 150°C

2.5

30

TVJ = 125°C

TVJ = 125°C

VR = 300 V 2.0

VR = 300 V 25
60 A

60 A 30 A

Qr

20

1.5

30 A

IRM

6A

[µC]

15

1.0

[A]

6A

10

0.5

5

0 0.0 0.5 1.0 1.5 2.0
VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF

0.0 100 200 300 400 -dF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt

0 100

200 300 400 -dF /dt [A/µs]

Fig. 3 Typ. peak reverse current IRM versus -diF /dt

1.4

1.2

TVJ = 125°C VR = 300 V

1.0

0.8

Kf

IRM

0.6

0.4 QR
0.2

175

150 60 A

trr

30 A

125

[ns]

100 6 A

TVJ = 125°C VR = 300 V

600 tfr
500
400 tfr
300 [ns] 200
100

60 TVJ = 125°C IF = 30 A
50
40 VFR V FR 30 [V] 20
10

0.0 0

40

80 120 160

TJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ

75 100 200 300 400
-dF /dt [A/µs] Fig. 5 Typ. recovery time
trr versus -diF /dt

0

0

0 200 400 600 800

-dF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt

175

60 A

150

TVJ = 125°C VR = 300 V

30 A

6A
125 Erec
100 [µJ] 75

50

25

0 100 200 300 400
-dF /dt [A/µs] Fig. 7 Recovery energy versus -diF /dt

1.4

1.2

1.0

0.8 ZthJC
0.6
[K/W] 0.4

Constants for ZthJC calculation:

i Rthi (K/W)

ti (s)

1 0.04

0.001

2 0.12

0.080

0.2

3 0.42

0.015

0.0 1

4 0.62

0.180

10

100

1000

10000

t [ms]

Fig. 8 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20201111c

Downloaded from Arrow.com.

References

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