IXYS DSEI25-06AS FRED Fast Recovery Epitaxial Diode Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
DSEI25-06AS FRED Fast Recovery Epitaxial Diode
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Specifications:
- Part number: DSEI25-06AS
- Marking on Product: DSEI25-06AS
- VRRM: 600 V
- I FAV: 25 A
- t rr: 35 ns
- Backside: cathode
Product Information:
The FRED (Fast Recovery Epitaxial Diode) Single Diode with part
number DSEI25-06AS is a high-performance diode with various
features and advantages. It is designed for applications requiring
fast recovery times and low leakage currents.
Features / Advantages:
- Planar passivated chips
- Very short recovery time
- Improved thermal behavior
- Low leakage current
- Soft recovery behavior
- Avalanche voltage rated for reliable operation
- Low Irm-values
Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package:
The product comes in a TO-263 (D2Pak) package, which is an
industry standard outline and RoHS compliant.
Product Usage Instructions:
Installation:
-
Ensure the cathode side of the diode is correctly oriented
according to the marking on the product. -
Mount the diode securely in the circuit, following standard
industry practices for component installation.
Circuit Connection:
Connect the diode as per the application requirements, ensuring
proper polarity and connections to achieve the desired
functionality.
Operating Conditions:
-
Avoid exceeding the maximum ratings specified for forward
current (I FAV) and reverse voltage (VRRM). -
Maintain suitable thermal management to prevent overheating
during operation.
Frequently Asked Questions (FAQ):
Q: What are the typical applications of the DSEI25-06AS
diode?
A: The DSEI25-06AS diode is commonly used as an antiparallel
diode for high frequency switching devices, antisaturation diode,
snubber diode, free wheeling diode, and in rectifiers for switch
mode power supplies (SMPS) and uninterruptible power supplies
(UPS).
Q: What is the package type of the DSEI25-06AS diode?
A: The DSEI25-06AS diode comes in a TO-263 (D2Pak) package,
which is an industry standard outline and RoHS compliant.
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FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI25-06AS
Marking on Product: DSEI25-06AS
1 3
2/4
DSEI25-06AS
VRRM =
I FAV
=
t rr
=
600 V 25 A 35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips Low leakage current Very short recovery time Improved
thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche
voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low
Irm reduces:
– Power dissipation within the diode – Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency switching devices
Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch
mode power
supplies (SMPS) Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
Industry standard outline RoHS compliant Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201111c
Downloaded from Arrow.com.
DSEI25-06AS
Fast Diode
Symbol VRSM VRRM IR VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current forward voltage drop
average forward current
VR = 600 V VR = 480 V IF = 25 A IF = 50 A IF = 25 A IF = 50 A TC = 100°C rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ I RM
t rr
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 400 V f = 1 MHz
reverse recovery time
IF = 30 A; VR = 300 V -diF/dt = 200 A/µs
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C
Ratings
min. typ. max. Unit 600 V 600 V 100 µA 6 mA 1.51 V 1.73 V 1.37 V 1.66 V 25 A
TVJ = 150°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 125
°C
1.10 V
10.6 m
1.2 K/W
0.50
K/W
105 W
240 A
20
pF
9
A
14
A
50
ns
120
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201111c
Package TO-263 (D2Pak)
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage
temperature
Conditions
per terminal 1)
FC
mounting force with clip
- IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Part Number
Logo Date Code
Location Lot#
XXXXXXXXX
IXYS yywwZ
123456
DSEI25-06AS
Ratings
min. typ. max. Unit 35 A
-40
150 °C
-40
125 °C
-40
150 °C
1.5
g
20
60 N
Ordering Standard Alternative
Ordering Number DSEI25-06AS-TRL DSEI25-06AS-TUB
Similar Part DSEI25-06A DFE25I600HA
Marking on Product DSEI25-06AS DSEI25-06AS
Delivery Mode Tape & Reel Tube
Quantity Code No.
800
520750
50
525170
Package TO-220AC (2) TO-247AD (2)
Voltage class 600 600
Equivalent Circuits for Simulation
I V0
R0
V 0 max R0 max
threshold voltage slope resistance *
Fast Diode
1.1
7.5
- on die level
T VJ = 150°C
V m
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201111c
DSEI25-06AS
Outlines TO-263 (D2Pak)
W
A
c2
L1
E
D
A1
123
H
Supplier Option
4
D1
L2
L
2x e
10.92 (0.430)
c
3x b2
2x b
mm (Inches)
E1
9.02 (0.355)
1.78 (0.07)
Dim. Millimeter min max
Inches min max
A 4.06 4.83 0.160 0.190
A1 typ. 0.10
typ. 0.004
A2
2.41
0.095
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
2.5
0.098
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
2,54 BSC
0,100 BSC
e1
4.28
0.169
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
W
typ. 0.02
0.040
typ. 0.0008
0.002
All dimensions conform with
and/or within JEDEC standard.
3.81 (0.150)
3.05 (0.120)
2.54 (0.100)
Recommended min. foot print
1 2/4
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201111c
DSEI25-06AS
Fast Diode
60
50
40 IF
30 [A] 20
10
TVJ = 25°C = 100°C = 150°C
2.5
30
TVJ = 125°C
TVJ = 125°C
VR = 300 V 2.0
VR = 300 V 25
60 A
60 A 30 A
Qr
20
1.5
30 A
IRM
6A
[µC]
15
1.0
[A]
6A
10
0.5
5
0 0.0 0.5 1.0 1.5 2.0
VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF
0.0 100 200 300 400 -dF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt
0 100
200 300 400 -dF /dt [A/µs]
Fig. 3 Typ. peak reverse current IRM versus -diF /dt
1.4
1.2
TVJ = 125°C VR = 300 V
1.0
0.8
Kf
IRM
0.6
0.4 QR
0.2
175
150 60 A
trr
30 A
125
[ns]
100 6 A
TVJ = 125°C VR = 300 V
600 tfr
500
400 tfr
300 [ns] 200
100
60 TVJ = 125°C IF = 30 A
50
40 VFR V FR 30 [V] 20
10
0.0 0
40
80 120 160
TJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ
75 100 200 300 400
-dF /dt [A/µs] Fig. 5 Typ. recovery time
trr versus -diF /dt
0
0
0 200 400 600 800
-dF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt
175
60 A
150
TVJ = 125°C VR = 300 V
30 A
6A
125 Erec
100 [µJ] 75
50
25
0 100 200 300 400
-dF /dt [A/µs] Fig. 7 Recovery energy versus -diF /dt
1.4
1.2
1.0
0.8 ZthJC
0.6
[K/W] 0.4
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.04
0.001
2 0.12
0.080
0.2
3 0.42
0.015
0.0 1
4 0.62
0.180
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201111c
Downloaded from Arrow.com.