IXYS DSEP60-06A HiPerFRED High Performance Fast Recovery Diode Owner’s Manual

June 1, 2024
IXYS

DSEP60-06A
HiPerFRED

High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP60-06A

DSEP60-06A HiPerFRED High Performance Fast Recovery Diode

VRRM= 600 V
IFAV = 60 A
trr = 35 ns

Features / Advantages:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    – Power dissipation within the diode
    – Turn-on loss in the commutating switch

Applications:

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package : TO-247

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Fast Diode Ratings
Symbol **Definition
Conditions**
V RSM max. non-repetitive reverse blocking voltage
600
V RRM max. repetitive reverse blocking voltage
600 V
I R reverse current, drain current
650 µA
VR = 600 V
V F forward voltage drop

V
| IF = 120 A| | | | 2,33| V
| IF =      60 A| TVJ       150°C| | | 1,39| V
| IF = 120 A| | 1,70| V
I **FAV| average forward current rectangular d = 0.5| TC = 130°C| TVJ = 175°C| | | 60| A
V F0 r F| threshold voltage slope resistance for power loss calculation only| TVJ = 175°C| | | 0,95| V
5| mΩ
R thJC| thermal resistance junction to case| | | | 0,45| K/W
R thCH| thermal resistance case to heatsink| | | 0,25| | K/W
P tot| total power dissipation| TC = 25°C| | | 330| W
I FSM| max. forward surge current = 45°C| t = 10 ms; (50 Hz), sine; VR = 0 V  TVJ| | | 600| A
C J| junction capacitance| VR = 400 V f = 1 MHz| TVJ = 25°C| | 67| | pF
I RM| max. reverse recovery current| __| TVJ = 25 °C| | 8| | A
| | IF =   60 A; VR = 300 V| TVJ = 100°C| | 13| | A
t rr| reverse recovery time| -diF/dt = 200 A/µs| TVJ = 25 °C| | 35| | ns
| | | TVJ = 100°C| | 110| | ns
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.| max.| Unit
I RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -55| | 175| °C
T op| operation temperature| | -55| | 150| °C
T stg| storage temperature| | -55| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0,8| | 1,2| Nm
F C**| mounting force with clip| | 20| 120| N

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEP60-06A| DSEP60-06A| Tube| 30| 474827
Similar Part| Package| Voltage class
---|---|---
DSEP60-06AT| TO-268AA (D3Pak) (2)| 600
DHG60I600HA| TO-247AD (2)| 600
DPH30IS600HI| ISOPLUS247 (2)| 600
 Equivalent Circuits for Simulation| | on die level| T VJ   = 175 °C
---|---|---|---
| Fast
Diode| |
V0 max threshold voltage| 0.95| | V
R0 max slope resistance
| 2.4| | mΩ

Outlines TO-247

IXYS DSEP60-06A HiPerFRED High Performance Fast Recovery Diode - Fig
3

Sym. Inches min.  max. Millimeter min. max.
A 0.185 0.209
A1 0.087 0.102
A2 0.059 0.098
D 0.819 0.845
E 0.610 0.640
E2 0.170 0.216
e 0.430 BSC 10.92 BSC
L 0.780 0.800
L1 0.177
Ø P 0.140 0.144
Q 0.212 0.244
S 0.242 BSC 6.14 BSC
b 0.039 0.055
b2 0.065 0.094
b4 0.102 0.135
c 0.015 0.035
D1 0.515
D2 0.020 0.053
E1 0.530
Ø P1 0.29

Fast Diode

IXYS DSEP60-06A HiPerFRED High Performance Fast Recovery Diode - Fig
4

IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
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References

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