IXYS DSEP60-12AR HiPerFRED High Performance Fast Recovery Diode Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
IXYS DSEP60-12AR HiPerFRED High Performance Fast Recovery Diode
Important Information
VRRM = 1200V
IFAV = 60A
trr = 40ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP60-12AR
Backside: isolated
Features / Advantages
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package ISOPLUS247
- Isolation Voltage: V~
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
- Soldering pins for PCB mounting
- Backside: DCB ceramic
- Reduced weight
- Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimerelectronics
Fast Diode
| Fast Diode | Ratings |
|---|---|
| Symbol | **Definition |
| Conditions** | |
| V RSM | max. non-repetitive reverse blocking voltage |
| 25°C | |
| V RRM | max. repetitive reverse blocking voltage |
| 1200 | V |
| I R | reverse current, drain current VR = 1200 V |
| 650 | µA |
| VR = 1200 V | |
| V F forward voltage drop | IF = 60 A |
| IF = 120 A | |
| IF = 60 A | |
| IF = 120 A | |
| I FAV | average forward current TC = 85°C |
rectangular d = 0.5
| | TVJ = 175°C| | | 60| A
V F0
r F
| threshold voltage
slope resistance for power loss calculation only
| | TVJ = 175°C| | | 1,08| V
9,4| mΩ
R thJC| thermal resistance junction to case| | | | | 0,65| K/W
R thCH| thermal resistance case to heatsink| | | | 0,25| | K/W
P tot| total power dissipation| | TC = 25°C| | | 230| W
I FSM| max. forward surge current t = 10 ms; (50 Hz), sine;| VR =
0 V| TVJ = 45°C| | | 500| A
C J| junction capacitance VR = 600 V f = 1 MHz| | TVJ = 25°C| |
30| | pF
I RM| max. reverse recovery current| | TVJ = 25 °C| | 13| | A
| IF = 60 A; VR = 600 V| | TVJ = 100°C| 20| A
t rr| reverse recovery time -diF /dt = 200 A/µs| | TVJ = 25 °C| |
80| | ns
| | | TVJ = 100°C| 220| ns
Package| ISOPLUS247| Ratings
---|---|---
Symbol| Definition
Conditions| | min.| typ.| max.| Unit
I RMS| RMS current per terminal| | | | 70| A
T VJ| virtual junction temperature| | -55| | 175| °C
T op| operation temperature| | -55| | 150| °C
T stg| storage temperature| | -55| | 150| °C
Weight| | 6| | g
F C| mounting force with clip| | 20| | 120| N
d Spp/App| creepage distance on surface | striking distance through
air| terminal to terminal| 5,4| | | mm
d Spb/Apb| | terminal to backside| 4,1| mm
V
ISOL
| isolation voltage t = 1 second t = 1 minute|
50/60 Hz, RMS; IISOL ≤ 1 mA
| 3600| | | V
3000| V
Product Marking
Ordering| Ordering Number| Marking on Product| Delivery
Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEP60-12AR| DSEP60-12AR| Tube| 30| 481939
Similar Part| Package| Voltage class
---|---|---
DSEP60-12A| TO-247AD (2)| 1200
DHG60I1200HA| TO-247AD (2)| 1200
DSEP60-12B| TO-247AD (2)| 1200
Equivalent Circuits for Simulation| | on die level| T = V 175°C
---|---|---|---
| Fast Diode| |
V0 max threshold voltage| 1,08| | V
R0 max slope resistance | 6,8| | mΩ
Outlines ISOPLUS247
| Dim. | Millimeter | Inches |
|---|---|---|
| min | max | min |
| A | 4.83 | 5.21 |
| A1 | 2.29 | 2.54 |
| A2 | 1.91 | 2.16 |
| b | 1.14 | 1.40 |
| b2 | 1.91 | 2.20 |
| b4 | 2.92 | 3.24 |
| c | 0.61 | 0.83 |
| D | 20.80 | 21.34 |
| D1 | 15.75 | 16.26 |
| D2 | 1.65 | 2.15 |
| D3 | 20.30 | 20.70 |
| E | 15.75 | 16.13 |
| E1 | 13.21 | 13.72 |
| e | 10.90 BSC | 0.429 BSC |
| L | 19.81 | 20.60 |
| L1 | 3.81 | 4.38 |
| Q | 5.59 | 6.20 |
| R | 4.25 | 5.50 |
| W | – | 0.10 |
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of
device bottom side
This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD
except screw hole and except Lmax.
Fast Diode
-
Fig. 1 Forward current IF versus VF
-
Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt
-
Fig. 3 Typ. peak reverse current IRM versus -diF /dt
-
Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ
-
Fig. 5 Typ. recovery time trr versus -diF /dt
-
Fig. 6 Typ peak forward voltage VFR and tfr versus diF /dt
-
Fig. 7 Transient thermal resistance junction to case
Constants for ZthJC calculation:
| i | Rthi (K/W) | ti (s) |
|---|---|---|
| 1 | 0.0500 | 0.0020 |
| 2 | 0.1000 | 0.0050 |
| 3 | 0.2000 | 0.0400 |
| 4 | 0.3000 | 0.1800 |
