IXYS DSEI60-10A Fast Recovery Epitaxial Diode Single Diode Owner’s Manual

: June 1, 2024
: IXYS

Table of Contents

Product Description
Features / Advantages
Applications
Disclaimer Notice
Fast Diode
Outlines TO-247
Fast Diode
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

IXYS DSEI60-10A Fast Recovery Epitaxial Diode Single Diode

Product Description

Backside: cathode

Product Description

Features / Advantages

Planar passivated chips
Low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch

Applications

Antiparallel diode for high frequency switching devices
Anti Saturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power supplies (SMPS)
Uninterruptible power supplies (UPS)

Package: TO-247

Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer- electronics.

Fast Diode

Fast Diode	Ratings
Symbol	**Definition
Conditions**
V RSM	max. non-repetitive reverse blocking voltage
25°C
V RRM	max. repetitive reverse blocking voltage
1000	V
I R	reverse current, drain current VR = 1000 V
3	mA
VR = 800 V
V **F	** forward voltage drop
2.30	V
IF = 120 A
IF = 60 A
IF = 120 A
I FAV	average forward current TC = 80°C rectangular d =
0.5
V F0 r F	threshold voltage _for power loss calculation
only_ slope resistance
8	mΩ
R thJC	thermal resistance junction to case
R thCH	thermal resistance case to heatsink
P tot	total power dissipation
I FSM	max. forward surge current t = 10 ms; (50 Hz), sine;
0 V	TVJ = 45°C
C J	junction capacitance VR = 600 V f = 1 MHz
36
I RM	![Mathematical Formulas](https://manuals.plus/wp-
content/uploads/2024/05/werwerwer.png)	TVJ = 25 °C
TVJ = 100 °C	23
t rr	TVJ = 25 °C
TVJ = 100 °C	200
Package	TO-247
---	---
Symbol	Definition
max.	Unit
I RMS	RMS current
T VJ	virtual junction temperature
T op	operation temperature
T stg	storage temperature
Weight
M D	mounting torque

F

C

| mounting force with clip| 20| 120| N

Product Marking

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-10A| DSEI60-10A| Tube| 30| 434515
Similar Part| Package| Voltage class
---|---|---
DSEI60-12A| TO-247AD (2)| 1200
Equivalent Circuits for Simulation| * on die level| TVJ = 1500° C
---|---|---
| Fast Diode|
V0 max| 1.44| V
R0 max| 5.5| mΩ

Outlines TO-247

Sym.

|

Inches

min. max.

|

Millimeter min. max.

---|---|---
A| 0.185| 0.209| 4.70| 5.30
A1| 0.087| 0.102| 2.21| 2.59
A2| 0.059| 0.098| 1.50| 2.49
D| 0.819 0.845| 20.79 21.45
E| 0.610 0.640| 15.48 16.24
E2| 0.170 0.216| 4.31     5.48
e| 0.430 BSC| 10.92 BSC
L| 0.780 0.800| 19.80 20.30
L1| –       0.177| –         4.49
Ø P| 0.140 0.144| 3.55     3.65
Q| 0.212 0.244| 5.38     6.19
S| 0.242 BSC| 6.14 BSC
b| 0.039| 0.055| 0.99| 1.40
b2| 0.065| 0.094| 1.65| 2.39
b4| 0.102| 0.135| 2.59| 3.43
c| 0.015| 0.035| 0.38| 0.89
D1| 0.515| –| 13.07| –
D2| 0.020| 0.053| 0.51| 1.35
E1| 0.530| –| 13.45| –
Ø P1| –| 0.29| –| 7.39