VISHAY IRFZ20 Power MOSFET Instruction Manual
- June 17, 2024
- VISHAY
Table of Contents
IRFZ20
Vishay Siliconix
Power MOSFET
IRFZ20 Power MOSFET
PRODUCT SUMMARY
VDS (V)| 50
RDS(on) (L)| VGS = 10 V| 0.10
Qg (Max.) (nC)| 17
Qgs (nC)| 9.0
Qgd (nC)| 3.0
Configuration| Single
FEATURES
- Extremely low RDS(on)
- Compact plastic package
- Fast switching
- Low drive current
- Ease of paralleling
- Excellent temperature stability
- Parts per million quality
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- Thi s datasheet provi des i nformation about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
The technology has expanded its product base to serve the low voltage, very
low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry
and unique processing have been combined to create the lowest on resistance
per device performance. In addition to this feature all have documented
reliability and parts per million quality! The transistor also offer all of
the well established advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high energy pulse circuits,
and in systems that are operated from low voltage batteries, such as
automotive, portable equipment, etc.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRFZ20PbF
Lead (Pb)-free and halogen-free| IRFZ20PbF-BE3
ABSOLUTE MAXIMUM RATINGS
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage a| VDS| 50| V
Gate-source voltage a| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 15|
A
TC = 100 °C| 10
Pulsed drain current b| IDM| 60
Single pulse avalanche energy c| EAS| 5| mJ
Linear derating factor (see fig. 16)| | 0.32| W/°C
Maximum power dissipation (see fig. 16)| TC = 25 °C| PD| 40| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| For 10 s| | 300 (0.063″ (1.6 mm)
from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Typical socket mount, junction-to-ambient| RthJA| –| 80|
°C/W
Case-to-sink, mounting surface flat, smooth, and greased| RthCS| 1.0| –
Junction-to-case| RthJC| –| 3.12
SPECIFICATIONS (T j = 25 °C, unless otherwise noted)| | | | | |
---|---|---|---|---|---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDs| Vas = 0 V, ID = 250 pA| 50| | –| V
VDS temperature coefficient| VGS(th)| VDS = Vgs, ID = 250 pA| 2.0| | 4.0| V
Gate-source threshold voltage| IGSS| Vgs = ± 20 V| | | ± 500| nA
Gate-source leakage| 100,A| VDs > Max. Rating, Vgs = 0 V| | | 250| pA
Zero gate voltage drain current| VDs = Max. Rating x 0.8, Vgs = 0 V,
TD = 125 °C| | | 1000
ID(on)| Vgs = 10 V| VDs > ID(on) x RDS(on) max.| –| –| 15| A
Drain-source on-state resistance b| RDS(on)| Vgs = 10 V| ID = 10 A| –| 0.080|
0.10| 0
Forward transconductance b| Ofs| VDs > ID(on) x RDS(on) max., ID = 9.0 A| 5.0|
6.0| –| S
Dynamic
Input capacitance| C,ss| Vas = 0 V,
VDs = 25 V,
f = 1.0 MHz, see fig. 11| –| 560| 860| pF
Output capacitance| Coss| –| 250| 350
Reverse transfer capacitance| Crss| –| 60| 100
Total gate charge| Qg| Vas = 10 V| ID = 20 A, VDS = 0.8 max. rating, see fig.
18 for test circuit (Gate charge isessentially independent of operating
temperature)| –| 12| 17| nC
Gate-source charge| Qgs| –| 9.0| –
Gate-drain charge| Ogd| –| 3.0| –
Turn-on delay time| ton)| VDD = 25 V, ID = 9.0 A,
4= 50 0, see fig. 5b| –| 15| 30| ns
Rise time| t,| –| 45| 90
Turn-off delay time| td(o(f)| | 20| 40
Fall time| tf| –| 15| 30
Internal drain inductance| LD| Modified MOSFET symbol showing the internal
device inductances| –| 4.| | n H
Internal source inductance| Ls| –| 5.|
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET sym symbol showing the
integral reversep – njunction rectifier| | | 15| A
Pulsed diode forward current a| ISM| | .| 60
Body diode voltage b| VsD| Te = 25 °C, Is = 15 A, Vas = 0 V| –| –| 2.| V
Body diode reverse recovery time| t,| Tj = 150 °C, IF = 15 A, dIF/dt = 100
A/ps| –| 100| –| ns
Body diode reverse recovery charge| Q,| | 0.4| –| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn on is
dominated by Ls and LD)
Notes
a. Repeditive rating: Pulse width limited by max. junction temperature. See
transient temperature impedance curve (see fig. 5)
b. Pulse test: Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91340.
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Revision: 01-Jan-2024
Document Number: 91000
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References
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