VISHAY IRF520S Power MOSFET Owner’s Manual
- June 16, 2024
- VISHAY
Table of Contents
VISHAY IRF520S Power MOSFET
Power MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Surface Mount
- Available in Tape and Reel
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details.
DESCRIPTION
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12).
- ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
- 1.6 mm from case.
- When mounted on 1″ square PCB (FR-4 or G-10 material).
Note
- When mounted on 1″ square PCB (FR-4 or G-10 material).
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91018.
TO-263AB (HIGH VOLTAGE)
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimetres (inches).
- Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
- Thermal PAD contour is optional within dimensions E, L1, D1 and E1.
- Dimensions b1 and c1 apply to base metal only.
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Disclaimer
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