VISHAY IRF730A Power MOSFET Owner’s Manual

VISHAY IRF730A Power MOSFET

Product Information

Specifications

• Manufacturer: Vishay Siliconix
• Product Name: IRF730A
• Package Type: D TO-220AB
• Channel Type: N-Channel MOSFET
• VDS (Drain-Source Voltage): 400V
• RDS(on) (Drain-Source On-State Resistance): 1.0Ω
• Qg max. (Total Gate Charge): 22nC
• Qgs (Gate-Source Charge): 5.8nC
• Qgd (Gate-Drain Charge): 9.3nC
• Configuration: Single

Product Usage Instructions

Step 1: Installation

1. Ensure the power supply is disconnected before installation.
2. Identify the appropriate mounting location for the IRF730A MOSFET.
3. Securely attach the MOSFET to the desired heat sink using a 6-32 or M3 screw.
4. Apply a thin layer of thermal grease on the flat surface between the case and the heat sink for optimal heat dissipation.

Step 2: Connection

1. Connect the drain (D) terminal of the MOSFET to the load or circuit where the high voltage is applied.
2. Connect the gate (G) terminal of the MOSFET to the control signal or gate driver.
3. Connect the source (S) terminal of the MOSFET to the common ground or return path of the circuit.

Step 3: Power Supply

1. Ensure the power supply is compatible with the specified drain-source voltage (VDS) of 400V.
2. Make sure the gate-source voltage (VGS) is within the recommended range, typically 10V.

Step 4: Circuit Protection
Implement appropriate circuit protection measures to prevent overcurrent, overvoltage, and overheating conditions. This may include using fuses, diodes, and thermal management techniques.

Frequently Asked Questions (FAQ)

• Q1: What is the maximum drain-source voltage for the IRF730A?
  The maximum drain-source voltage (VDS) for the IRF730A is 400V.

• Q2: What is the drain-source on-state resistance of the IRF730A?
  The drain-source on-state resistance (RDS(on)) of the IRF730A is 1.0Ω.

• Q3: What is the total gate charge of the IRF730A?
  The total gate charge (Qg) of the IRF730A is 22nC.

• Q4: Can the IRF730A be used in a single configuration?
  Yes, the IRF730A is designed for single-configuration usage.

• Q5: What are the typical applications for the IRF730A?
  The IRF730A is commonly used in typical SMPS (Switched-Mode Power Supply) topologies.

FEATURES

• Low gate charge Qg results in simple drive requirement
• Improved gate, avalanche, and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage and current
• Effective Coss specified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note * This datasheet provides information about parts that are RoHS- compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High-speed power switching

TYPICAL SMPS TOPOLOGIES

• Single transistor flyback Xfmr. reset
• Single transistor forward Xfmr. reset (both US line inputs only)

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 400
RDS(on) (W)| VGS = 10 V| 1.0
Qg max. (nC)| 22
Qgs (nC)| 5.8
Qgd (nC)| 9.3
Configuration| Single

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12)
• c. ISD ≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 400| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.5| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.5| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 400 V, VGS = 0 V| –| –| 25| μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 3.3 A b| –| –| 1.0| W
Forward transconductance| gfs| VDS = 50 V, ID = 3.3 A| 3.1| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 600| –| pF
Output capacitance| Coss| –| 103| –
Reverse transfer capacitance| Crss| –| 4.0| –
Output capacitance| Coss| VGS = 0 V| VDS = 1.0 V, f = 1.0 MHz| –| 890| –
VDS = 320 V, f = 1.0 MHz| –| 30| –
Effective output capacitance| Coss eff.| VDS = 0 V to 320 V c| –| 45| –
Total gate charge| Qg| VGS = 10 V| ID = 3.5 A, VDS = 320 V

see fig. 6 and 13 b

| –| –| 22| nC
Gate-source charge| Qgs| –| –| 5.8
Gate-drain charge| Qgd| –| –| 9.3
Turn-on delay time| td(on)| VDD = 200 V, ID = 3.5 A Rg = 12 W, RD = 57 W,

see fig. 10 b

| –| 10| –| ns
Rise time| tr| –| 22| –
Turn-off delay time| td(off)| –| 20| –
Fall time| tf| –| 16| –
Gate input resistance| Rg| f = 1 MHz, open drain| 2.7| –| 10.9| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode| –| –| 5.5| A
Pulsed diode forward current a| ISM| –| –| 22
Body diode voltage| VSD| TJ = 25 °C, IS = 5.5 A, VGS = 0 V b| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs b| –| 370| 550| ns
Body diode reverse recovery charge| Qrr| –| 1.6| 2.4| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91045.

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies, or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential or incidental damages, and (iii) any implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF730A MOSFETs | Vishay

Read User Manual Online (PDF format)

Read User Manual Online (PDF format)  >>

Download This Manual (PDF format)

Download this manual  >>