VISHAY IRF640 Power Mosfet Owner’s Manual

www.vishay.com
IRF640, SiHF640
Vishay Siliconix

IRF640 Power Mosfet

Power MOSFET

PRODUCT SUMMARY

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION

SiHF640-E3
SnPb| IRF640
SiHF640

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 7 mH, Rg = 25 W, IAS = 18 A (see fig. 12).
c. ISD £ 18 A, dI/dt £ 150 A/μs, VDD £ VDS, TJ £ 150 °C.
d. 1.6 mm from case.

THERMAL RESISTANCE RATINGS

°C/W

Case-to-Sink, Flat, Greased Surface| RthCS| 0.50| –
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0

SPECIFICATIONS

(TJ= 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 pA| 200| | | V
VDS Temperature Coefficient| AVDs/T j| Reference to 25 °C, ID = 1 mA| –| 0.29| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 2501.1A| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| loss| VDs = 200 V, VGs = 0 V| –| –| 25| pA
VDs = 160 V, VGs = 0 V, Tj = 125 °C| | –| 250
Drain-Source On-State Resistance| RDson)| VGS = 10 V| I ID = 11 A b| –| –| 0.18| Q
Forward Transconductance| gis| VDs = 50 V, ID = 11 A b| 7.| | | S
Dynamic
Input Capacitance| Cass| VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5| –| 1300| | pF
Output Capacitance| C| –| 430| –
Reverse Transfer Capacitance| 0,,| –| 130|
Total Gate Charge| 9| VGS = 10 V| ID= 18 A, \fps =160 V,
see fig. 6 and 13| –| –| 70| nC
Gate-Source Charge| 95| | | 13
Gate-Drain Charge| 09,| –| –| 39
Turn-On Delay Time| td(on)| VDD = 100 V, ID = 18 A,
R9 = 9.1 L-2, RD = 5.4 (2, see fig. 10 b| –| 14| –| ns
Rise Time| ty| –| 51|
Turn-Off Delay Time| td(oft)| –| 45|  –
Fall Time| tr| –| 36| –
Internal Drain Inductance| I-0| Between lead, 6 mm (0.251 from package and center of die contact| –| 5.| –|
Internal Source Inductance| Ls| nH –| 8.|
Gate Input Resistance| R9| f = 1 MHz, open drain| 0.5| –| 4.| Q
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| Is| MOSFET symbol showing the integral reverse
p – n junction diode| –| | 18|
Pulsed Diode Forward Current a| ism| A
–| –| 72
Body Diode Voltage| Vs0| Tj = 25 °C, Is= 18 A, VGs= 0 Vb| –| –| 2.0| V
Body Diode Reverse Recovery Time| tf Y| T j = 25 °C, IF = 18 A, dI/dt = 100 A/ps b| –| 300| 610| ns
Body Diode Reverse Recovery Charge| 0„| –| 3.| 7.| pC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LS

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)      

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Output Characteristics, TC = 150 °C Fig. 3 – Typical Transfer Characteristics Fig. 4 – Normalized On-Resistance vs. Temperature Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 – Typical Source-Drain Diode Forward Voltage Fig. 8 – Maximum Safe Operating Area Fig. 9 – Maximum Drain Current vs. Case Temperature Fig. 10a – Switching Time Test Circuit Fig. 10b – Switching Time Waveforms Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a – Unclamped Inductive Test Circuit Fig. 12b – Unclamped Inductive Waveforms Fig. 12c – Maximum Avalanche Energy vs. Drain Current Fig. 13a – Basic Gate Charge Waveform Fig. 13b – Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91036.

Disclaimer

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© 2023 VISHAY INTERTECHNOLOGY, INC.
ALL RIGHTS RESERVED
S15-2667-Rev. C, 16-Nov-15
Document Number: 91036
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF640, SiHF640 MOSFETs | Vishay

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