VISHAY IRF640 Power Mosfet Owner’s Manual
- June 16, 2024
- VISHAY
Table of Contents
www.vishay.com
IRF640, SiHF640
Vishay Siliconix
IRF640 Power Mosfet
Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 200 |
|---|---|
| RDS(on) (W) | VGS = 10 V |
| Qg (Max.) (nC) | 70 |
| Qgs (nC) | 13 |
| Qgd (nC) | 39 |
| Configuration | Single |
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant
and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb)
terminations are not RoHS-compliant. Please see the information / tables in
this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRF640PbF |
SiHF640-E3
SnPb| IRF640
SiHF640
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V |
| Gate-Source Voltage | VGS | ± 20 | |
| Continuous Drain Current | VGS at 10 V | TC = 25 °C | ID |
| TC = 100 °C | 11 | ||
| Pulsed Drain Current a | IDM | 72 | |
| Linear Derating Factor | 1.0 | W/°C | |
| Single Pulse Avalanche Energy b | EAS | 580 | mJ |
| Repetitive Avalanche Current a | IAR | 18 | A |
| Repetitive Avalanche Energy a | EAR | 13 | mJ |
| Maximum Power Dissipation | TC = 25 °C | PD | 125 |
| Peak Diode Recovery dV/dt c | dV/dt | 5.0 | V/ns |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Soldering Recommendations (Peak temperature) d | for 10 s | 300 | |
| Mounting Torque | 6-32 or M3 screw | 10 | |
| 1.1 | N · m |
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
11).
b. VDD = 50 V, starting TJ = 25 °C, L = 7 mH, Rg = 25 W, IAS = 18 A (see fig.
12).
c. ISD £ 18 A, dI/dt £ 150 A/μs, VDD £ VDS, TJ £ 150 °C.
d. 1.6 mm from case.
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum Junction-to-Ambient | RthJA | – | 62 |
°C/W
Case-to-Sink, Flat, Greased Surface| RthCS| 0.50| –
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0
SPECIFICATIONS
(TJ= 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 pA| 200| | | V
VDS Temperature Coefficient| AVDs/T j| Reference to 25 °C, ID = 1 mA| –| 0.29|
–| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 2501.1A| 2.0| –| 4.0|
V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| loss| VDs = 200 V, VGs = 0 V| –| –| 25| pA
VDs = 160 V, VGs = 0 V, Tj = 125 °C| | –| 250
Drain-Source On-State Resistance| RDson)| VGS = 10 V| I ID = 11 A b| –| –|
0.18| Q
Forward Transconductance| gis| VDs = 50 V, ID = 11 A b| 7.| | | S
Dynamic
Input Capacitance| Cass| VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5| –| 1300| | pF
Output Capacitance| C| –| 430| –
Reverse Transfer Capacitance| 0,,| –| 130|
Total Gate Charge| 9| VGS = 10 V| ID= 18 A, \fps =160 V,
see fig. 6 and 13| –| –| 70| nC
Gate-Source Charge| 95| | | 13
Gate-Drain Charge| 09,| –| –| 39
Turn-On Delay Time| td(on)| VDD = 100 V, ID = 18 A,
R9 = 9.1 L-2, RD = 5.4 (2, see fig. 10 b| –| 14| –| ns
Rise Time| ty| –| 51|
Turn-Off Delay Time| td(oft)| –| 45| –
Fall Time| tr| –| 36| –
Internal Drain Inductance| I-0| Between lead, 6 mm (0.251 from package and
center of die contact| –| 5.| –|
Internal Source Inductance| Ls| nH –| 8.|
Gate Input Resistance| R9| f = 1 MHz, open drain| 0.5| –| 4.| Q
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| Is| MOSFET symbol showing the integral
reverse
p – n junction diode| –| | 18|
Pulsed Diode Forward Current a| ism| A
–| –| 72
Body Diode Voltage| Vs0| Tj = 25 °C, Is= 18 A, VGs= 0 Vb| –| –| 2.0| V
Body Diode Reverse Recovery Time| tf Y| T j = 25 °C, IF = 18 A, dI/dt = 100
A/ps b| –| 300| 610| ns
Body Diode Reverse Recovery Charge| 0„| –| 3.| 7.| pC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and LS
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 
Fig. 1 – Typical Output Characteristics, TC = 25 °C 
Fig. 2 – Typical Output Characteristics, TC = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs.
Temperature 
Fig. 5 – Typical
Capacitance vs. Drain-to-Source Voltage 
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage 
Fig. 7 – Typical Source-Drain Diode
Forward Voltage 
Fig. 8 – Maximum
Safe Operating Area 
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10a –
Switching Time Test Circuit 
Fig. 10b – Switching Time Waveforms 
Fig. 11 – Maximum Effective Transient Thermal
Impedance, Junction-to-Case 
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c –
Maximum Avalanche Energy vs. Drain Current 
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
Vishay
Siliconix maintains worldwide manufacturing capability. Products may be
manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all
qualified locations. For related documents such as package/tape drawings, part
marking, and reliability data, see http://www.vishay.com/ppg?91036.
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ALL RIGHTS RESERVED
S15-2667-Rev. C, 16-Nov-15
Document Number: 91036
For technical questions, contact: hvm@vishay.com
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References
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