VISHAY IRFP350 Power MOSFET Instruction Manual

: June 4, 2024
: VISHAY

Table of Contents

FEATURES
DESCRIPTION
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Package Information
Legal Disclaimer Notice
Documents / Resources

IRFP350 Power MOSFET
Instruction Manual VISHAY IRFP350 Power MOSFET

VISHAY IRFP350 Power MOSFET - tabil 1

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Isolated central mounting hole
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

VISHAY IRFP350 Power MOSFET - tabil 2

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg= 25 Ω, IAS = 16 A (see fig. 12)
c. ISD ≤ 16 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from the case

VISHAY IRFP350 Power MOSFET - tabil 3 VISHAY
IRFP350 Power MOSFET - tabil 4

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY IRFP350 Power MOSFET - Figure 1 VISHAY
IRFP350 Power MOSFET - Figure 2

VISHAY IRFP350 Power MOSFET - Figure 3 VISHAY
IRFP350 Power MOSFET - Figure 4

Peak Diode Recovery dV/dt Test Circuit

VISHAY IRFP350 Power MOSFET - Figure 5

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91225.

Package Information

TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

VISHAY IRFP350 Power MOSFET - Figure 6

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 5.| 5.|
Al| 2.| 3.|
A2| 1.50| 2.|
b| 1.| 1.|
bl| 1.| 1.|
b2| 2.| 2.| 6
b3| 2.| 2.|
b4| 3.| 3.| 7.
b5| 3.| 3.|
c| 0.55| 0.69| 6
Cl| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.| 17.| 5
D2| 0.56| 0.76|
E| 15.50| 16.| 4
El| 13.| 14.| 5
E2| 5.| 5.| 3
e| 5.44 BSC|
L| 14.90| 15.40|
Ll| 4.| 4.| 6
0 P| 4.| 4.| 7
0 P1| 7.19 ref.|
Q| 5.| 6.|
S| 6.| 6.|

Notes

Package reference: JEDEC® TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimensions at the maximum material condition.

VERSION 2: FACILITY CODE = Y

VISHAY IRFP350 Power MOSFET - Figure 7

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 5.| 5.|
Al| 2.| 3.|
A2| 1.| 2.|
b| 0.99| 1.40|
bl| 0.99| 1.|
b2| 2.| 2.|
b3| 2.| 2.|
b4| 2.| 3.|
b5| 3.| 3.|
c| 0.38| 0.86|
cl| 0.38| 0.76|
D| 20.| 21.|
D1| 13.| |
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.| 16.|
El| 14.| –|
e| 5.46 BSC|
0 k| 0.254|
L| 14.20| 16.|
Ll| 4.| 4.|
0 P| 4.| 4.|
0 P1| | 7.|
0| 5.| 6.|
R| 5.| 5.|
S| 5.51 BSC|

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
The contour of slot optional
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

VISHAY IRFP350 Power MOSFET - Figure 8

| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 5.| 5.| D2| 0.51| 1.
Al| 2.| 3.| E| 15.| 16.
A2| 1.17 J| 1.| El| 13.|
b| 0.99| 1.40| e| 5.46 BSC
bl| 0.99| 1.| k| 0.254
b2| 1.65 _I| 2.| L| 14.20| 16.10
b3| 2.| 2.| Ll| 4.| 4.
b4| 3.| 3.| N| 7.62 BSC
b5| 3.| 3.| P| 4.| 4.
| 0.38| 0.89| P1| | 7.
cl| 0.38 _I| 0.84| Co| 5.| 6.
D| 20.| 20.70| R| 5.| 5.
D1| 13.| | S| 5.51 BSC

ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
The contour of slot optional
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer
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