VISHAY IRFP360PBF Power Mosfet Transistor User Manual
- June 4, 2024
- VISHAY
Table of Contents
User Manual
www.vishay.com
IRFP360
Vishay Siliconix
IRFP360PBF Power Mosfet Transistor
PRODUCT SUMMARY
VDS (V)| 400
RDS(on) (L)| VGS = 10 V| 0.20
Qg (max.) (C)| 210
Qgs (NC)| 30
QGD (NC)| 110
Configuration| Single
Power MOSFET
FEATURES
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note - This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details
DESCRIPTION
Third-generation Power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance,
and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to meet
the requirements of most safety specifications.
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| IRFP360PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 400| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 23|
A
TC = 100 °C| 14
Pulsed drain current| ITEM| 92
Linear derating factor| | 2.2| W/°C
Single pulse avalanche energy b| EAS| 1200| MJ
Repetitive avalanche current a| IAR| 23| A
Repetitive avalanche energy a| EAR| 28| MJ
Maximum power dissipation| TC = 25 °C| PD| 280| W
Peak diode recovery dv/dt c| DV/DT| 4.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| for 10 s| | 300d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.0 mH, Rg = 25 Ω, IAS = 23 A (see
fig. 12)
c. ISD ≤ 23 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from the case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| that| –| 40|
°C/W
Case-to-sink, flat, greased surface| RCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.45
SPECIFICATIONS (T j = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 pA| 400| –| | V
VDS temperature coefficient| _I Vos/TJ| Reference to 25 °C, ID = 1 mA| –|
0.56| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 pA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| | ± 100| nA
Zero gate voltage drain current| loss| VDs = 400 V, VGs = 0 V| | | 25| pA
VDs = 320 V, VGs = 0 V, T j = 125 °C| | | 250
Drain-source on-state resistance| Roston)| VGs = 10 V| I ID = 14 A b|
| | 0.20| Q
Forward transconductance| grs| VDs = 50 V, ID = 14 A b| | –| | S
Dynamic
Input capacitance| Cass| VGS = 0 V,
DVDs = 25 V,
f = 1.0 MHz, see fig. 5| –| 4500| | pF
Output capacitance| Coss| –| 1100|
Reverse transfer capacitance| CRS,| –| 490| –
Total gate charge| 09| VGS = 10 V| 23 A, = DVDs 320
ID see fig. 6 a = and 13 b V,
| | –| 210| NC
Gate-source charge| Tags| | –| 30
Gate-drain charge| Ow| | –| 110
Turn-on delay time| Ltd(on)| VDD = 200 V, ID = 23 A ,
R9 = 4.312, RD = 8.3 Q, see fig. 10 b
| | 18| –| ns
Rise time| t,| | 79| –
Turn-off delay time| td(oft)| | 100|
Fall time| tf| | 67|
Internal drain inductance| Lo| Between lead, 6 mm (0.251) from package and
center of die contact| | 5.0| |
Internal source inductance| Ls| | 13| NH
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| is| MOSFET symbol showing the integral
reverse p – n junction diode| –| | 23| A
Pulsed diode forward current a| Ism| | –| 92
Body diode voltage| Video| Tj = 25 °C, Is = 23 A, VGs=0Vb| –| –| 1.8| V
Body diode reverse recovery time| t,| Tj = 25 °C, IF = 23 A, dl/dt = 100 A/ps
b| –| 420| 630| ns
Body diode reverse recovery charge| OFT| –| 5.6| 8.4| PC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and LS
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
|
---|---
Fig. 1 – Typical Output Characteristics, TC = 25 °C| Fig. 4 –
Normalized On-Resistance vs. Temperature
|
Fig. 2 – Typical Output Characteristics, TC = 150 °C| Fig. 5 – Typical
Capacitance vs. Drain-to-Source Voltage
|
Fig. 3 – Typical Transfer Characteristics| Fig. 6 – Typical Gate
Charge vs. Gate-to-Source Voltage
|
Fig. 7 – Typical Source-Drain Diode Forward Voltage| Fig. 9 – Maximum
Drain Current vs. Case Temperature
| 
---|---
|
---|---
  Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90292.
Package Information
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|
Notes
(1) Package reference: JEDEC ® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimensions D and E do not include mold flash. Mold flash shall not exceed
0.127 mm per side. These dimensions are measured at the outermost extremes of
the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a
maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 do not include dambar protrusion. Allowable dambar
protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at the
maximum material condition
VERSION 2: FACILITY CODE = Y
| | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) The contour of slot optional
(3) Dimensions D and E do not include mold flash. Mold flash shall not exceed
0.127 mm (0.005″) per side. These dimensions are measured at the outermost
extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a
maximum hole diameter of 3.91 mm (0.154″)
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) The contour of slot optional
(3) Dimensions D and E do not include mold flash. Mold flash shall not exceed
0.127 mm (0.005″) per side. These dimensions are measured at the outermost
extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a
maximum hole diameter of 3.91 mm (0.154″)
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Revision: 19-Oct-2020
Document Number: 91360
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS,
SET FORTH AT www.vishay.com/doc?91000
References
- applications.no
- Vishay Intertechnology: Passives & Discrete Semiconductors
- IRFP360 Power MOSFET | Vishay
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