Vishay IRFI9634G Power MOSFET User Manual

: June 13, 2024
: VISHAY

Table of Contents

Vishay IRFI9634G Power MOSFET
Product Information
Product Usage Instructions
Power MOSFET
FEATURES
TO-220 FULLPAK (High Voltage)
References
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Download This Manual (PDF format)

Vishay IRFI9634G Power MOSFET

Product Information

Product Name: IRFI9634G
Brand: Vishay Siliconix
Product Type: Power MOSFET
Package Type: TO-220 FULLPAK
Configuration: Single
Drain-Source Voltage (VDS): -250V
Gate-Source Voltage (VGS): -10V
Continuous Drain Current (ID): 1.0A
Maximum Gate Charge (Qg): 38nC
Gate-Source Charge (Qgs): 8.0nC
Gate-Drain Charge (Qgd): 18nC

Product Usage Instructions

Make sure to properly connect the IRFI9634G Power MOSFET according to the pin configuration.
The Drain-Source Voltage (VDS) should not exceed -250V.
The Gate-Source Voltage (VGS) should be set to -10V for proper operation.
The Continuous Drain Current (ID) should not exceed 1.0A.
The Maximum Gate Charge (Qg) should be limited to 38nC.
The Gate-Source Charge (Qgs) should be limited to 8.0nC.
The Gate-Drain Charge (Qgd) should be limited to 18nC.
Refer to the product datasheet available at www.vishay.com/doc?99912 for more detailed features and specifications.
For any technical questions or support, contact hvmos.techsupport@vishay.com.

Power MOSFET

PRODUCT SUMMARY

FEATURES

Advanced process technology
Dynamic dV/dt rating
150 °C operating temperature
Fast switching
P-channel
Fully avalanche rated
Material categorization : for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation n capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION

Package| TO-220 FULLPAK
Lead (Pb)-free| IRFI9634GPbF

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -250| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at -10 V| TC = 25 °C| ID| -4.1|

A

TC = 100 °C| -2.6
Pulsed drain current a| IDM| -16
Linear derating factor| | 0.28| W/°C
Single pulse avalanche energy b| EAS| 520| mJ
Repetitive avalanche current a| IAR| -4.1| A
Repetitive avalanche energy a| EAR| 3.5| mJ
Maximum power dissipation| TC = 25 °C| PD| 35| W
Peak diode recovery dV/dt c| dV/dt| -5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| M3 screw| | 0.6| Nm

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Starting TJ = 25 °C, L = 62 mH, RG = 25 , IAS = -4.1 A (see fig. 12)
ISD  -4.1 A, dI/dt  -640 A/μs, VDD  VDS, TJ  150 °C
1.6 mm from case

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width  300 μs; duty cycle  2 %

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Output Characteristics, T C= 150 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature Fig. 10a – Switching Time Test Circuit Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91168.

TO-220 FULLPAK (High Voltage)

OPTION 1: FACILITY CODE = 9

| MILLIMETERS
---|---
DIM.| MIN.| NOM.| MAX.
A| 4.60| 4.70| 4.80
b| 0.70| 0.80| 0.91
b1| 1.20| 1.30| 1.47
b2| 1.10| 1.20| 1.30
C| 0.45| 0.50| 0.63
D| 15.80| 15.87| 15.97
e| 2.54 BSC
E| 10.00| 10.10| 10.30
F| 2.44| 2.54| 2.64
G| 6.50| 6.70| 6.90
L| 12.90| 13.10| 13.30
L1| 3.13| 3.23| 3.33
Q| 2.65| 2.75| 2.85
Q1| 3.20| 3.30| 3.40
Ø R| 3.08| 3.18| 3.28

Notes

To be used only for process drawing
These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
All critical dimensions should C meet Cpk > 1.33
All dimensions include burrs and plating thickness
No chipping or package damage
Facility code will be the 1st character located at the 2nd row of the unit marking

OPTION 2: FACILITY CODE = Y

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.570| 4.830| 0.180| 0.190
A1| 2.570| 2.830| 0.101| 0.111
A2| 2.510| 2.850| 0.099| 0.112
b| 0.622| 0.890| 0.024| 0.035
b2| 1.229| 1.400| 0.048| 0.055
b3| 1.229| 1.400| 0.048| 0.055
c| 0.440| 0.629| 0.017| 0.025
D| 8.650| 9.800| 0.341| 0.386
d1| 15.88| 16.120| 0.622| 0.635
d3| 12.300| 12.920| 0.484| 0.509
E| 10.360| 10.630| 0.408| 0.419
e| 2.54 BSC| 0.100 BSC
L| 13.200| 13.730| 0.520| 0.541
L1| 3.100| 3.500| 0.122| 0.138
n| 6.050| 6.150| 0.238| 0.242
Ø P| 3.050| 3.450| 0.120| 0.136
u| 2.400| 2.500| 0.094| 0.098
V| 0.400| 0.500| 0.016| 0.020
ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972

Notes

To be used only for process drawing
These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
All critical dimensions should C meet Cpk > 1.33
All dimensions include burrs and plating thickness
No chipping or package damage
Facility code will be the 1st character located at the 2nd row of the unit marking

Disclaimer
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