Vishay IRFBF20S Power MOSFET Owner’s Manual

: June 13, 2024
: VISHAY

Table of Contents

Vishay IRFBF20S Power MOSFET
Product Information
Product Usage Instructions
FEATURES
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TO-263AB (HIGH VOLTAGE)
I2PAK (TO-262) (HIGH VOLTAGE)
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

Vishay IRFBF20S Power MOSFET

Product Information

The product is a Power MOSFET manufactured by Vishay Siliconix. It is available in different configurations and packages, including I2PAK (TO-262) and D2PAK (TO-263). The specific models mentioned in the user manual are IRFBF20S, SiHFBF20S, IRFBF20L, and SiHFBF20L. The product features include a drain-source voltage (VDS) of 900V, a drain-source on-resistance (RDS(on)) of 8.0Ω, a maximum gate charge (Qg) of 38nC, a gate-source charge (Qgs) of 4.7nC, and a gate-drain charge (Qgd) of 21nC. It is an N-channel MOSFET with a single configuration.

Product Usage Instructions

Ensure that the product is properly installed in the appropriate package (I2PAK or D2PAK).
Connect the drain and source terminals of the MOSFET to the desired circuitry.
Apply a suitable gate-source voltage (VGS) to control the operation of the MOSFET. The recommended VGS is 10V.
Make sure that the drain-source voltage (VDS) does not exceed the specified maximum value of 900V.
The drain current (ID) should be within the continuous drain current rating specified in the user manual.
Take into account the linear derating factor when determining the maximum allowable power dissipation.
If using the MOSFET in pulse applications, consider the pulsed drain current (IDM) and single pulse avalanche energy (EAS) ratings.
Observe the specified operating junction and storage temperature range for proper performance and longevity of the MOSFET.
When soldering the MOSFET, follow the recommended soldering temperature and duration provided in the user manual.
Refer to the datasheet for more detailed technical information and specific device orientations.

PRODUCT SUMMARY

FEATURES

Surface-mount (IRFBF20S, SiHFBF20S)
Low-profile through-hole (IRFBF20L, SiHFBF20L)
Available in tape and reel (IRFBF20S, SiHFBF20S)
Dynamic dV/dt rating
150 °C operating temperature
Fast switching
Fully avalanche rated
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface-mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. Th e through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications.

ORDERING INFORMATION

Note

See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage e| VDS| 900| V
Gate-source voltage e| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 1.7| A
TC = 100 °C| 1.1
Pulsed drain current a, e| IDM| 6.8
Linear derating factor| | 0.43| W/°C
Single pulse avalanche energy b, e| EAS| 180| mJ
Repetitive avalanche current a| IAR| 1.7| A
Repetitive avalanche energy a| EAR| 5.4| mJ
Maximum power dissipation| TC = 25 °C| PD| 54| W
TA = 25 °C| 3.1
Peak diode recovery dV/dt c, e| dV/dt| 1.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| for 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| N

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25 , IAS = 1.7 A (see fig. 12)
ISD 1.7 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C
1.6 mm from case
Uses IRFBF20, SiHFBF20 data and test conditions

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient (PCB mounted, steady-state) a| RthJA| –| 40| °C/W
Maximum junction-to-case| RthJC| –| 2.3

Note

When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0, ID = 250 μA| 900| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 1.1| –| mV/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 900 V, VGS = 0 V| –| –| 100| μA
VDS = 720 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 1.0 A b| –| –| 8.0| W
Forward transconductance| gfs| VDS = 50 V, ID = 1.0 A b| 0.6| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5| –| 490| –|

pF

Output capacitance| Coss| –| 55| –
Reverse transfer capacitance| Crss| –| 18| –
Total gate charge| Qg| VGS = 10 V| ID = 1.7 A, VDS = 360 V, see fig. 6 and 13 b| –| –| 38|

nC

Gate-source charge| Qgs| –| –| 4.7
Gate-drain charge| Qgd| –| –| 21
Turn-on delay time| td(on)| VDD = 450 V, ID = 1.7 A, Rg = 18 W, VGS = 10 V, see fig. 10 b| –| 8.0| –|

ns

Rise time| tr| –| 21| –
Turn-off delay time| td(off)| –| 56| –
Fall time| tf| –| 32| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 3.4| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
D showing the integral reverse G
p – n junction diode S| –| –| 1.7|

A

Pulsed diode forward current a| ISM| –| –| 6.8
Body diode voltage| VSD| TJ = 25 °C, IS = 1.7 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/μs b| –| 350| 530| ns
Body diode reverse recovery charge| Qrr| –| 0.85| 1.3| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width 300 μs; duty cycle 2 %
Uses IRFBF20/SiHFBF20 data and test conditions

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Typical Output Characteristics

Typical Transfer Characteristics

Normalized On-Resistance vs. Temperature

Typical Capacitance vs. Drain-to-Source Voltage

Typical Gate Charge vs. Gate-to-Source Voltage

Typical Source-Drain Diode Forward Voltage

Maximum Safe Operating Area

Maximum Drain Current vs. Case Temperature

Switching Time Test Circuit

Switching Time Waveforms

Maximum Effective Transient Thermal Impedance, Junction-to-Case

Unclamped Inductive Test Circuit

Unclamped Inductive Waveforms

Maximum Avalanche Energy vs. Drain Current

Basic Gate Charge Waveform

Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91121.

TO-263AB (HIGH VOLTAGE)

$IRFBF20S -Power -MOSFET -fig $23$$

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190
A1| 0.00| 0.25| 0.000| 0.010
b| 0.51| 0.99| 0.020| 0.039
b1| 0.51| 0.89| 0.020| 0.035
b2| 1.14| 1.78| 0.045| 0.070
b3| 1.14| 1.73| 0.045| 0.068
c| 0.38| 0.74| 0.015| 0.029
c1| 0.38| 0.58| 0.015| 0.023
c2| 1.14| 1.65| 0.045| 0.065
D| 8.38| 9.65| 0.330| 0.380

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
D1| 6.86| –| 0.270| –
E| 9.65| 10.67| 0.380| 0.420
E1| 6.22| –| 0.245| –
e| 2.54 BSC| 0.100 BSC
H| 14.61| 15.88| 0.575| 0.625
L| 1.78| 2.79| 0.070| 0.110
L1| –| 1.65| –| 0.066
L2| –| 1.78| –| 0.070
L3| 0.25 BSC| 0.010 BSC
L4| 4.78| 5.28| 0.188| 0.208

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimensions are shown in millimeters (inches).
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
Thermal PAD contour optional within dimension E, L1, D1 and E1.
Dimension b1 and c1 apply to base metal only.
Datum A and B to be determined at datum plane H.
Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

$IRFBF20S -Power -MOSFET -fig $24$$

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190
A1| 2.03| 3.02| 0.080| 0.119
b| 0.51| 0.99| 0.020| 0.039
b1| 0.51| 0.89| 0.020| 0.035
b2| 1.14| 1.78| 0.045| 0.070
b3| 1.14| 1.73| 0.045| 0.068
c| 0.38| 0.74| 0.015| 0.029
c1| 0.38| 0.58| 0.015| 0.023
c2| 1.14| 1.65| 0.045| 0.065

ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
D| 8.38| 9.65| 0.330| 0.380
D1| 6.86| –| 0.270| –
E| 9.65| 10.67| 0.380| 0.420
E1| 6.22| –| 0.245| –
e| 2.54 BSC| 0.100 BSC
L| 13.46| 14.10| 0.530| 0.555
L1| –| 1.65| –| 0.065
L2| 3.56| 3.71| 0.140| 0.146

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
Thermal pad contour optional within dimension E, L1, D1, and E1.
Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Recommended Minimum Pads
Dimensions in Inches/(mm)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience an d for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay o f any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
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