VISHAY IRLR110 Power Mosfet Instruction Manual

: June 4, 2024
: VISHAY

VISHAY IRLR110 Power Mosfet Instruction Manual

Power MOSFET

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Surface-mount (IRLR110, SiHLR110)
Straight lead (IRLU110, SiHLU110)
Available in tape and reel
Logic-level gate drive
RDS(on) specified at VGS = 4 V and 5 V
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation ower MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

PRODUCT SUMMARY

VDS (V)| 100
RDS(on) (L)| VGS = 5.0 V| 0.54
Qg (Max.) (nC)| 6.1
Qgs (nC)| 2.0
Qgd (nC)| 3.3
Configuration| Single
ORDERING INFORMATION

Note

See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 10
Continuous drain current| VGS at 5 V| TC = 25 °C| ID| 4.3|

A

TC = 100 °C| 2.7
Pulsed drain current a| IDM| 17
Linear derating factor| | 0.20| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 100| mJ
Repetitive avalanche current a| IAR| 4.3| A
Repetitive avalanche energy a| EAR| 2.5| mJ
Maximum power dissipation| TC = 25 °C| PD| 25| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 260

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12)
ISD ≤ 5.6 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from case
When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110|

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 5.0

Note

When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 100| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.12| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = – 250 μA| 1.0| –| 2.0| V
Gate-source leakage| IGSS| VGS = ± 10 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 100 V, VGS = 0 V| –| –| 25| μA
VDS = 80 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 5.0 V| ID = 2.6 Ab| –| –| 0.54| L
VGS = 4.0 V| ID = 2.2 Ab| –| –| 0.76
Forward transconductance| gfs| VDS = 50 V, ID = 2.6 A| 2.3| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 250| –|

pF

Output capacitance| Coss| –| 80| –
Reverse transfer capacitance| Crss| –| 15| –
Total gate charge| Qg|

VGS = 5.0 V

|

ID = 5.6 A, VDS = 80 V,

see fig. 6 and 13b

| –| –| 6.1|

nC

Gate-source charge| Qgs| –| –| 2.0
Gate-drain charge| Qgd| –| –| 3.3
Turn-on delay time| td(on)|

VDD = 50 V, ID = 5.6 A,

Rg = 12 L, RD = 8.4 L, see fig. 10b

| –| 9.3| –|

ns

Rise time| tr| –| 47| –
Turn-off delay time| td(off)| –| 16| –
Fall time| tf| –| 17| –
Internal drain inductance| LD| Between lead,

6 mm (0.25″) from package and center of die contactc

|

G

|

D

S

| | –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse

p – n junction diode

|

G

| |

D

S

| –| –| 4.3|

A

Pulsed diode forward current a| ISM| –| –| 17
Body diode voltage| VSD| TJ = 25 °C, IS =4.3 A, VGS = 0 Vb| –| –| 2.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb| –| 100| 130| ns
Body diode reverse recovery charge| Qrr| –| 0.50| 0.65| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Transfer Characteristics

Fig. 3 – Typical Output Characteristics, TC = 150 °C

Fig. 4 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Source-Drain Diode Forward Voltage

Fig. 5 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Maximum Safe Operating Area

Fig. 8 – Maximum Drain Current vs. Case Temperature

Fig. 10a – Switching Time Test Circuit

Fig. 10b – Switching Time Waveforms

Fig. 9 – Maximum Effective Transient Thermal Impedance, Junction-to- Case

Fig. 12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Curre nt

Fig. 13a – Basic Gate Charge Waveform

Fig. 13b – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Fig. 10 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91323

TO-252AA Case Outline

	MILLIMETERS
DIM.	MIN.
A	2.18
A1	–
b	0.64
b2	0.76
b3	4.95
C	0.46
C2	0.46
D	5.97
D1	4.10
E	6.35
E1	4.32
H	9.40
e	2.28 BSC
e1	4.56 BSC
L	1.40
L3	0.89
L4	–
L5	1.01

Note

Dimension L3 is for reference only

VERSION 2: FACILITY CODE = N

	MILLIMETERS
DIM.	MIN.
A	2.18
A1	–
b	0.65
b1	0.64
b2	0.76
b3	4.95
c	0.46
c1	0.41
c2	0.46
D	5.97
D1	5.21
E	6.35
E1	4.32
e	2.29 BSC
H	9.94
	MILLIMETERS
---	---
DIM.	MIN.
L	1.50
L1	2.74 ref.
L2	0.51 BSC
L3	0.89
L4	–
L5	1.14
L6	0.65
q	0°
q1	0°
q2	25°

Notes

Dimensioning and tolerance confirm to ASME Y14.5M-1994
All dimensions are in millimeters. Angles are in degrees
Heat sink side flash is max. 0.8 mm
Radius on terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION 1:

	MILLIMETERS	INCHES			MILLIMETERS	INCHES
DIM.	MIN.	MAX.	MIN.	MAX.	DIM.	MIN.
MAX.	MIN.	MAX.
A	2.18	2.39	0.086	0.094	D1	5.21
A1	0.89	1.14	0.035	0.045	E	6.35
b	0.64	0.89	0.025	0.035	E1	4.32
b1	0.65	0.79	0.026	0.031	e	2.29 BSC
b2	0.76	1.14	0.030	0.045	L	8.89
b3	0.76	1.04	0.030	0.041	L1	1.91
b4	4.95	5.46	0.195	0.215	L2	0.89
c	0.46	0.61	0.018	0.024	L3	1.14
c1	0.41	0.56	0.016	0.022	q1	0′
c2	0.46	0.86	0.018	0.034	q2	25′
D	5.97	6.22	0.235	0.245

ECN: E21-0605-Rev. B, 25-Oct-2021 DWG: 5968

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Dimension are shown in inches and millimeters
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions b4, L2, E1 and D1
Lead dimension uncontrolled in L3
Dimension b1, b3 and c1 apply to base metal only
Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

DIM.| MIN.| MAX.| MAX.| | DIM.| MIN.| MAX.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0605-Rev. B, 25-Oct-2021 DWG: 5968

Notes

Dimensioning and tolerancing per ASME 5M-1994
All dimension are in millimeters, angles are in degrees
Heat sink side flash is 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Recommended Minimum Pads
Dimensions in Inches/(mm)

Disclaimer

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