VISHAY IRFBF20 Power Mosfet Owner’s Manual
- June 12, 2024
- VISHAY
Table of Contents
www.vishay.com
IRFBF20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
| Vds (V) | 900 |
|---|---|
| Ros(on) (n) | VGs = 10 V |
| Qg max. (nC) | 38 |
| Qgs (nC) | 4.7 |
| Qgd (nC) | 21 |
| Configuration | Single |
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching · Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRFBF20PbF |
| Lead (Pb)-free and halogen-free | IRFBF20PbF-BE3 |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
| PARA METER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-source voltage | Vos | 900 | V |
| Gate-source voltage | VGs | ± 20 | |
| Continuous drain current | VGs at 10 V | Tc = 25 °C | lD |
| Tc = 100 °C | 1.1 | ||
| Pulsed drain current a | lDM | 6.8 | |
| Linear derating factor | 0.43 | W/°C | |
| Single pulse avalanche energy b | EAs | 180 | mJ |
| Repetitive avalanche current a | IAR | 1.7 | A |
| Repetitive avalanche energy a | EAR | 5.4 | mJ |
| Maximum power dissipation | Tc = 25 °C | Po | 54 |
| Peak diode recovery dV/dt c | dV/dt | 1.5 | V/ns |
| Operating junction and storage temperature range | TJ,Tstg | -55 to +150 | °C |
| Soldering recommendations (peak temperature) d | For 10 s | 300 | |
| Mounting torque | 6-32 or M3 screw | 10 | |
| 1.1 | N·m |
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 117 mH, Rg = 25 , IAS = 1.7 A (see
fig. 12)
c. ISD ≤ 1.7 A, dI/dt ≤ 70 A/s, VDD 600, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
| PARAMETER SYMBOL | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum junction-to-ambient | RthJA | -6 | -62 | °C/W |
| Case-to-sink, flat, greased surface | RthCS | 0.5 | – | |
| Maximum junction-to-case (drain) | RthJC | -2 | 2.3 |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91120.
TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4.24 | 4.65 |
| b | 0.69 | 1.02 |
| b(1) | 1.14 | 1.78 |
| c | 0.36 | 0.61 |
| D | 14.33 | 15.85 |
| E | 9.96 | 10.52 |
| e | 2.41 | 2.67 |
| e(1) | 4.88 | 5.28 |
| F | 1.14 | 1.40 |
| H(1) | 6.10 | 6.71 |
| J(1) | 2.41 | 2.92 |
| L | 13.36 | 14.40 |
| L(1) | 3.33 | 4.04 |
| ø P | 3.53 | 3.94 |
| Q | 2.54 | 3.00 |
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink
hole for HVM
Disclaimer
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HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Revision: 01-Jan-2022
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Document Number: 91000
References
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