VISHAY IRFD9110 Power MOSFET Instruction Manual

VISHAY IRFD9110 Power MOSFET

Product Information

Product Name: IRFD9110 Vishay Siliconix Power MOSFET

Product Summary:

• VDS (V): -100
• RDS(on) (): 1.2
• Qg (Max.) (nC): 8.7
• Qgs (nC): 2.2
• Qgd (nC): 4.1
• Configuration: Single
• Package Type: HVMDIP
• P-Channel MOSFET

Features: Please see www.vishay.com/doc?99912 for features.

Description: The IRFD9110 is a third-generation power MOSFET that provides fast switching, ruggedized device design, low on-resistance and cost- effectiveness. This device comes in a low-cost machine-insertable case style with four pins in a DIP package. It can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Product Usage Instructions

Thermal Resistance Ratings: The device has a maximum junction-to-ambient thermal resistance
of 120°C/W.

Parameter Tests: The following parameters can be tested:

• Static Drain-Source Breakdown Voltage VDS
• Temperature Coefficient VDS/TJ
• Gate-Source Threshold Voltage VGS(th)
• Gate-Source Leakage IGSS
• Zero Gate Voltage Drain Current IDSS
• Drain-Source On-State Resistance RDS(on)
• Forward Transconductance gfs
• Input Capacitance Ciss
• Output Capacitance Coss
• Reverse Transfer Capacitance Crss
• Total Gate Charge Qg
• Gate-Source Charge Qgs
• Gate-Drain Charge Qgd
• Turn-On Delay Time td(on)
• Rise Time tr
• Turn-Off Delay Time td(off)
• Fall Time tf
• Internal Drain Inductance LD
• Internal Source Inductance LS
• Continuous Source-Drain Diode Current IS
• Pulsed Diode Forward Current ISM
• Body Diode Voltage VSD
• Body Diode Reverse Recovery Time trr
• Body Diode Reverse Recovery Charge Qrr

Please refer to the product manual for test conditions and limits.

Soldering Recommendations: The peak temperature for soldering should not exceed 260°C for 10 seconds.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| -100
RDS(on) (Ù)| VGS = -10 V| 1.2
Qg (Max.) (nC)| 8.7
Qgs (nC)| 2.2
Qgd (nC)| 4.1
Configuration| Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
• End stackable
• P-channel
• Fast switching
• 175 °C operating temperature
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-inserted le case style that can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION

Package| HVMDIP
Lead (Pb)-free| IRFD9110PbF
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -100|

V

Gate-source voltage| VGS| ± 20

Continuous drain current

| VGS at -10 V| TA = 25 °C| ID| -0.70|

A

TA = 100 °C| -0.49
Pulsed drain current a| IDM| -5.6
Linear derating factor|  | 0.0083| W/°C
Single pulse avalanche energy b| EAS| 140| MJ
Repetitive avalanche current a| IAR| -0.7| A
Repetitive avalanche energy a| EAR| 0.13| MJ
Maximum power dissipation| TA = 25 °C| PD| 1.3| W
Peak diode recovery dv/dt c| dV/dt| -5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to + 175|

°C

Soldering recommendations (peak temperature) d| For 10 s|  | 300d

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = -25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = -2.0 A (see fig. 12)
• ISD ≤ -4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
• 1.6 mm from case

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 120| °C/W

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = -250 μA| -100| –| –| V
VDS Temperature Coefficient| ÄVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.091| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero Gate Voltage Drain Current

| IDSS| VDS = -100 V, VGS = 0 V| –| –| -100|

μA

VDS = -80 V, VGS = 0 V, TJ = 150 °C| –| –| -500
Drain-Source On-State Resistance| RDS(on)| VGS = -10 V| ID = -0.42 Ab| –| –| 1.2| Ù
Forward Transconductance| gfs| VDS = -50 V, ID = -0.42 A| 0.60| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = -25 V,

f = 1.0 MHz, see fig. 5

| –| 200| –|

pF

Output Capacitance| Coss| –| 94| –
Reverse Transfer Capacitance| Cross| –| 18| –
Total Gate Charge| Qg|

VGS = -10 V

|

ID = -4.0 A, VDS = -80 V

see fig. 6 and 13b

| –| –| 8.7|

nC

Gate-Source Charge| Qgs| –| –| 2.2
Gate-Drain Charge| Qgd| –| –| 4.1
Turn-On Delay Time| td(on)|

VDD = -50 V, ID = -4.0 A Rg = 24 Ù, RD = 11 Ù,

see fig. 10b

| –| 10| –|

ns

Rise Time| tr| –| 27| –
Turn-Off Delay Time| td(off)| –| 15| –
Fall Time| tf| –| 17| –
Internal Drain Inductance| LD| Between lead,                                 D

6 mm (0.25″) from package and center of

G

die contact

S

| –| 4.0| –|

nH

Internal Source Inductance| LS| –| 6.0| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol D

showing the

integral reverse                    G

p – n junction diode                         S

| –| –| -0.70|

A

Pulsed Diode Forward Current| ISM| –| –| -5.6
Body Diode Voltage| VSD| TJ = 25 °C, IS = -0.7 A, VGS = 0 Vb| –| –| -5.5| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μsb| –| 82| 160| ns
Body Diode Reverse Recovery Charge| Qrr| –| 0.15| 0.30| μC

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Package Information

HVM DIP (High voltage)

ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for a particular purpose, non- infringement and merchantability.

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Documents / Resources

| VISHAY IRFD9110 Power MOSFET [pdf] Instruction Manual
IRFD9110PbF, IRFD9110 Power MOSFET, IRFD9110, Power MOSFET, MOSFET
---|---
| VISHAY IRFD9110 Power MOSFET [pdf] User Manual
IRFD9110 Power MOSFET, IRFD9110, Power MOSFET, MOSFET

References

• applications.no
• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFD9110 MOSFETs | Vishay
• IRFD9110 Power MOSFET | Vishay

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