VISHAY IRFD120 Power MOSFET Owner’s Manual

: June 9, 2024
: VISHAY

Table of Contents

Power MOSFET
FEATURES
- DESCRIPTION
TYPICAL CHARACTERISTICS
- Peak Diode Recovery dV/dt Test Circuit
HVM DIP
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRFD120 Power MOSFET

Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
For automatic insertion
End stackable
175 °C operating temperature
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertab le case style which can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION

Package| HVMDIP
Lead (Pb)-free| IRFD120PbF
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TA = 25 °C| ID| 1.3| A
TA = 100 °C| 0.94
Pulsed drain current a| IDM| 10
Linear derating factor| | 0.0083| W/°C
Single pulse avalanche energy b| EAS| 100| mJ
Repetitive avalanche current a| IAR| 1.3| A
Repetitive avalanche energy a| EAR| 0.13| mJ
Maximum power dissipation| TA = 25 °C| PD| 1.3| W
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature)| For 10 s| | 300d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 22 mH, Rg = 25 Ω, IAS = 2.6 A (see fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 120| °C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 100| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.13| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 100 V, VGS = 0 V| –| –| 25| μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 0.78 Ab| –| –| 0.27| W
Forward Transconductance| gfs| VDS = 50 V, ID = 0.78 Ab| 0.80| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5| –| 360| –| pF
Output Capacitance| Coss| –| 150| –
Reverse Transfer Capacitance| Crss| –| 34| –
Total Gate Charge| Qg| VGS = 10 V| ID = 9.2 A, VDS = 80 V see fig. 6 and 13b| –| –| 16| nC
Gate-Source Charge| Qgs| –| –| 4.4
Gate-Drain Charge| Qgd| –| –| 7.7
Turn-On Delay Time| td(on)| VDD = 50 V, ID = 9.2 A Rg = 18 W, RD = 5.2 W, see fig. 10b| –| 6.8| –| ns
Rise Time| tr| –| 27| –
Turn-Off Delay Time| td(off)| –| 18| –
Fall Time| tf| –| 17| –
Internal Drain Inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact
| –| 4.0| –| nH
Internal Source Inductance| LS| –| 6.0| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode
| –| –| 1.3| A
Pulsed Diode Forward Currenta| ISM| –| –| 10
Body Diode Voltage| VSD| TJ = 25 °C, IS = 1.3 A, VGS = 0 Vb| –| –| 2.5| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb| –| 130| 260| ns
Body Diode Reverse Recovery Charge| Qrr| –| 0.65| 1.3| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Typical Characteristics

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91128.

HVM DIP

(High voltage)

Hvm Dip

| INCHES| MILLIMETERS
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 0.310| 0.330| 7.87| 8.38
E| 0.300| 0.425| 7.62| 10.79
L| 0.270| 0.290| 6.86| 7.36
ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974

Note

Package length does not include mold flash, protrusions or gate burrs. Package width does not include interplead flash or protrusions.

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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