VISHAY IRF840A Power MOSFET Owner’s Manual

VISHAY IRF840A Power MOSFET

Power MOSFET

FEATURES

• Low gate charge Qg results in simple drive requirement

• Improved gate, avalanche, and dynamic dV/d t ruggedness

• Fully characterized capacitance and avalanch e voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note

  • • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)
• Uninterruptable power supply
• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two transistor forward
• Half bridge
• Full bridge

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
• ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case

SPECIFICATION

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Package Information

Disclaimer

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For technical questions, contact: hvm@vishay.com 
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References

• applications.no
• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF840A MOSFETs | Vishay
• IRF840A MOSFETs | Vishay

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