VISHAY IRFIZ48GPBF Semiconductors Mouser Malaysia Instructions

: June 16, 2024
: VISHAY

Table of Contents

VISHAY IRFIZ48GPBF Semiconductors Mouser Malaysia
FAQ
Power MOSFET
FEATURES
DESCRIPTION
SPECIFICATIONS
TYPICAL CHARACTERISTICS
Package Information
Legal Disclaimer Notice
Documents / Resources

VISHAY IRFIZ48GPBF Semiconductors Mouser Malaysia

Specifications

Brand: Vishay Siliconix
Product Name: IRFIZ48G
Package Type: TO-220 FULL PACK
Type: N-Channel MOSFET
Drain-Source Voltage (VDS): 60V
Gate-Source Voltage (VGS): 10V
On-Resistance (RDS(on)): 29mΩ
Total Gate Charge (Qg): 29nC (Max.)
Gate-Source Charge (Qgs): 36nC
Gate-Drain Charge (Qgd): 8.1nC

Product Description

The Vishay IRFIZ48G is a third-generation power MOSFET that offers fast switching, ruggedized design, low on-resistance, and cost-effectiveness.
The TO-220 FULLPAK package eliminates the need for additional insulation hardware in commercial-industrial applications.

Features

Fast switching
Ruggedized device design
Low on-resistance
Cost-effective
High isolation capability
Low thermal resistance

Ordering Information

Lead (Pb)-free Package: TO-220 FULLPAK IRFIZ48GPbF

Thermal Resistance Ratings

Junction-to-Ambient : Max. 65°C/W
Junction-to-Case (Drain): Max. 3.0°C/W

FAQ

Q: What is the maximum drain-source voltage of the IRFIZ48G MOSFET?

A: The maximum drain-source voltage (VDS) is 60V.

Q: What is the gate-source voltage for the IRFIZ48G?

A: The gate-source voltage (VGS) is 10V.

Q: What is the on-resistance of the IRFIZ48G MOSFET?

A: The on-resistance (RDS(on)) is 29mΩ.

Q: Does the IRFIZ48G require additional insulating hardware?

A: No, the TO-220 FULLPAK package eliminates the need for additional insulating hardware.

Power MOSFET

PRODUCT SUMMARY

FEATURES

Isolated package
High voltage isolation = 2.5 kV RMS (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
175 °C operating temperature
Dynamic dV/dt rating
Low thermal resistance
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and the external heatsink.
This isolation is equivalent to using a 10 0 micron mica barrier with a standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or a single screw fixing.

ORDERING INFORMATION

Package| TO-220 FULLPAK
Lead (Pb)-free| IRFIZ48GPbF
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 37|

A

TC = 100 °C| 26
Pulsed drain current a| IDM| 150
Linear derating factor| | 0.40| W/°C
Single pulse avalanche energy b| EAS| 100| MJ
Maximum power dissipation| TC = 25 °C| PD| 50| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| M3 screw| | 0.6| Nm

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 85 μH, RG = 25 Ω, IAS = 37 A (see fig. 12)
c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from the case

SPECIFICATIONS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 65| °C/W
Maximum junction-to-case (drain)| RthJC| –| 3.0
SPECIFICATIONS T J = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-ssource breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.060| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero gate voltage drain current

| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 22 A b| –| –| 0.018| W
Forward transconductance| gs| VDS = 25 V, ID = 22 A b| 17| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 2400| –|

pF

Output capacitance| Coss| –| 1300| –
Reverse transfer capacitance| Cross| –| 190| –
Drain-to-sink capacitance| C| f = 1.0 MHz| –| 12| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 72 A, VDS = 48 V

See Fig. 6 and 13 b

| –| –| 110|

nC

Gate-source charge| Qgs| –| –| 29
Gate-drain charge| Qgd| –| –| 36
Turn-on delay time| td(on)|

VDD = 30 V, ID = 72 A RG = 9.1 W, RD= 0.34 W,

see fig. 10 b

| –| 8.1| –|

ns

Rise time| tr| –| 250| –
Turn-off delay time| td(off)| –| 210| –
Fall time| tf| –| 250| –
Internal drain inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode| –| –| 37|

A

Pulsed diode forward current a| ISM| –| –| 150
Body diode voltage| VSD| TJ = 25 °C, IS = 37 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| try| TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs b| –| 120| 180| ns
Body diode reverse recovery charge| Qrr| –| 0.50| 0.80| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted ****

Package Information

TO-220 FULLPAK (High Voltage)

OPTION 1: FACILITY CODE = 9

| MILLIMETERS
---|---
DIM.| MIN.| NOM.| MAX.
A| 4.60| 4.70| 4.80
b| 0.70| 0.80| 0.91
b1| 1.20| 1.30| 1.47
b2| 1.10| 1.20| 1.30
C| 0.45| 0.50| 0.63
D| 15.80| 15.87| 15.97
e| 2.54 BSC
E| 10.00| 10.10| 10.30
F| 2.44| 2.54| 2.64
G| 6.50| 6.70| 6.90
L| 12.90| 13.10| 13.30
L1| 3.13| 3.23| 3.33
Q| 2.65| 2.75| 2.85
Q1| 3.20| 3.30| 3.40
Ø R| 3.08| 3.18| 3.28

Notes

To be used only for process drawing
These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
All critical dimensions should C meet Cpk > 1.33
All dimensions include burrs and plating thickness
No chipping or package damage
The facility code will be the 1st character located at the 2nd row of the unit marking

OPTION 2: FACILITY CODE = Y

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.570| 4.830| 0.180| 0.190
A1| 2.570| 2.830| 0.101| 0.111
A2| 2.510| 2.850| 0.099| 0.112
b| 0.622| 0.890| 0.024| 0.035
b2| 1.229| 1.400| 0.048| 0.055
b3| 1.229| 1.400| 0.048| 0.055
c| 0.440| 0.629| 0.017| 0.025
D| 8.650| 9.800| 0.341| 0.386
d1| 15.88| 16.120| 0.622| 0.635
d3| 12.300| 12.920| 0.484| 0.509
E| 10.360| 10.630| 0.408| 0.419
e| 2.54 BSC| 0.100 BSC
L| 13.200| 13.730| 0.520| 0.541
L1| 3.100| 3.500| 0.122| 0.138
n| 6.050| 6.150| 0.238| 0.242
Ø P| 3.050| 3.450| 0.120| 0.136
u| 2.400| 2.500| 0.094| 0.098
V| 0.400| 0.500| 0.016| 0.020
ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972

Legal Disclaimer Notice

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies, or incompleteness contained in any datasheet or any other disclosure relating to any product.
Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential, or incidental damages, and (iii) any implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. The inclusion of these hyperlinks does not constitute an endorsement or approval by Vishay of any of the products, services, or opinions of the corporation, organization, or individual associated with the third-party website. Vishay disclaims any liability and bears no responsibility for the accuracy, legality, or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2024 1 Document Number: 91000

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Documents / Resources

| VISHAY IRFIZ48GPBF Semiconductors Mouser Malaysia [pdf] Instructions
IRFIZ48GPBF Semiconductors Mouser Malaysia, IRFIZ48GPBF, Semiconductors Mouser Malaysia, Mouser Malaysia, Malaysia
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