VISHAY Si9926CDY Dual N Channel 20 V (D-S) MOSFET Owner’s Manual
- June 1, 2024
- VISHAY
Table of Contents
VISHAY Si9926CDY Dual N Channel 20 V (D-S) MOSFET
Specifications
- Product Name: Si9926CDY
- Brand: Vishay Siliconix
- Type: Dual N-Channel MOSFET
- Drain-Source Voltage (VDS): 20V
- RDS(on) max. at VGS = 4.5V: 0.018 Ω
- RDS(on) max. at VGS = 2.5V: 0.022 Ω
- Gate Charge (Qg): 10nC (typical)
- Continuous Drain Current (ID): 8A
- Package: SO-8 Dual
Product Usage Instructions
Features
This Dual N-Channel MOSFET is lead (Pb)-free and halogen-free, suitable for
various applications including game machines and PCs.
Parameter Summary
The MOSFET has a maximum drain-source voltage of 20V, with low RDS(on)
values at different gate-source voltage levels. It has a typical gate charge
of 10nC and can handle a continuous drain current of 8A.
Thermal Resistance Ratings
The MOSFET has a maximum junction-to-ambient thermal resistance of 50°C/W
for steady-state conditions and 32°C/W for transient (<10s) conditions.
Detailed Electrical Characteristics
The MOSFET has various electrical characteristics including input/output
capacitances, gate charge, on/off delay times, and body diode characteristics.
Make sure to refer to the provided specifications for detailed values.
FAQ
-
Q: What are the typical applications of this MOSFET?
A: The MOSFET is commonly used in game machines and PCs due to its performance characteristics. -
Q: What is the maximum drain-source voltage supported by this MOSFET?
A: The MOSFET can handle a maximum drain-source voltage of 20V. -
Q: Is the MOSFET lead (Pb)-free and halogen-free?
A: Yes, the MOSFET is available in lead (Pb)-free and halogen-free packages.
FEATURES
- TrenchFET® power MOSFET
- 100 % UIS tested
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- DC/DC converter
- Game machine
- PC
PRODUCT SUMMARY
| VDS (V) | 20 |
|---|---|
| RDS(on) max. (W) at VGS = 4.5 V | 0.018 |
| RDS(on) max. (W) at VGS = 2.5 V | 0.022 |
| Qg typ. (nC) | 10 |
| ID (A) a | 8 |
| Configuration | Dual |
ORDERING INFORMATION
| Package | SO-8 |
|---|---|
| Lead (Pb)-free | Si9926CDY-T1-E3 |
| Lead (Pb)-free and halogen-free | Si9926CDY-T1-GE3 |
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 20| V
Gate-source voltage| VGS| ± 12
Continuous drain current (TJ = 150 °C)
| TC = 25 °C|
ID
| 8 a|
A
TC = 70 °C| 8 a
TA = 25 °C| 8 a, b, c
TA = 70 °C| 6.7 b, c
Pulsed drain current| IDM| 30
Continuous source-drain diode current| TC = 25 °C| IS| 2.6
TA = 25 °C| 1.7 b, c
Single pulse avalanche current| L = 0.1 mH| IAS| 5
Single pulse avalanche energy| EAS| 1.25| mJ
Maximum power dissipation
| TC = 25 °C|
PD
| 3.1|
W
TC = 70 °C| 2
TA = 25 °C| 2 b, c
TA = 70 °C| 1.3 b, c
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYPICAL| MAXIMUM| UNIT
Maximum junction-to-ambient a, c, d| t £ 10 s| RthJA| 50| 62.5| °C/W
Maximum junction-to-foot (drain)| Steady state| RthJF| 32| 40
Notes
- Package limited, TC = 25 °C
- Surface mounted on 1″ x 1″ FR4 board
- t = 10 s
- Maximum under steady state conditions is 110 °C/W
SPECIFICATIONS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 20| –| –| V
VDS temperature coefficient| DVDS /TJ| ID = 250 μA| –| 25| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| -4| –
Gate-source threshold voltage| VGS(th)| VDS = VGS , ID = 250 μA| 0.6| –| 1.5|
V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 12 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 20 V, VGS = 0 V| –| –| 1| μA
VDS = 20 V, VGS = 0 V, TJ = 55 °C| –| –| 10
On-state drain current a| ID(on)| VDS ³ 5 V, VGS = 4.5 V| 30| –| –| A
Drain-source on-state resistance a| RDS(on)| VGS = 4.5 V, ID = 8.3 A| –|
0.015| 0.018| W
VGS = 2.5 V, ID = 4.5 A| –| 0.017| 0.022
Forward transconductance a| gfs| VDS = 10 V, ID = 8.3 A| –| 45| –| S
Dynamic b
Input capacitance| Ciss|
VDS = 10 V, VGS = 0 V, f = 1 MHz
| –| 1200| –|
pF
Output capacitance| Coss| –| 220| –
Reverse transfer capacitance| Crss| –| 100| –
Total gate charge| Qg| VDS = 10 V, VGS = 10 V, ID = 8.3 A| –| 22| 33|
nC
VDS = 10 V, VGS = 4.5 V, ID = 8.3 A
| –| 10| 15
Gate-source charge| Qgs| –| 2.5| –
Gate-drain charge| Qgd| –| 1.7| –
Gate resistance| Rg| f = 1 MHz| –| 2.4| –| W
Turn-on delay time| td(on)|
VDD = 10 V, RL = 1.5 W
ID @ 6.7 A, VGEN = 4.5 V, Rg = 1 W
| –| 15| 25|
ns
Rise time| tr| –| 10| 15
Turn-off delay time| td(off)| –| 35| 55
Fall time| tf| –| 12| 20
Turn-on delay time| td(on)|
VDD = 10 V, RL = 1.5 W
ID @ 6.7 A, VGEN = 10 V, Rg = 1 W
| –| 10| 15
Rise time| tr| –| 12| 20
Turn-off delay time| td(off)| –| 25| 40
Fall time| tf| –| 10| 15
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 2.6| A
Pulse diode forward current| ISM| | –| –| 30
Body diode voltage| VSD| IS = 6.7 A, VGS = 0 V| –| 0.8| 1.2| V
Body diode reverse recovery time| trr|
IF = 6.7 A, di/dt = 100 A/μs, TJ = 25 °C
| –| 20| 40| ns
Body diode reverse recovery charge| Qrr| –| 10| 20| nC
Reverse recovery fall time| ta| –| 10| –| ns
Reverse recovery rise time| tb| –| 10| –
Notes
- Pulse test; pulse width 300 μs, duty cycle 2 %
- Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
TYPICAL CHARACTERISTICS
Notes
The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case
thermal resistance, and is more useful in settling the upper dissipation limit
for cases where additional heatsinking is used. It is used to determine the
current rating, when this rating falls below the package limit
SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012
DIM
| MILLIMETERS| INCHES
---|---|---
Min| Max| Min| Max
A| 1.35| 1.75| 0.053| 0.069
A1| 0.10| 0.20| 0.004| 0.008
B| 0.35| 0.51| 0.014| 0.020
C| 0.19| 0.25| 0.0075| 0.010
D| 4.80| 5.00| 0.189| 0.196
E| 3.80| 4.00| 0.150| 0.157
e| 1.27 BSC| 0.050 BSC
H| 5.80| 6.20| 0.228| 0.244
h| 0.25| 0.50| 0.010| 0.020
L| 0.50| 0.93| 0.020| 0.037
q| 0°| 8°| 0°| 8°
S| 0.44| 0.64| 0.018| 0.026
ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498
RECOMMENDED MINIMUM PADS FOR SO-8
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Revision: 01-Jan-2024 1 Document Number: 91000
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References
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