VISHAY IRFP32N50K Power MOSFET Owner’s Manual
- June 17, 2024
- VISHAY
Table of Contents
VISHAY IRFP32N50K Power MOSFET
Product Information
Specifications
- Brand: Vishay Siliconix
- Product Name: IRFP32N50K
- Type: Power MOSFET
- Package Type: TO-247AC
- Channel Type: N-Channel
- Drain-Source Voltage (VDS): 500V
- On-State Resistance (RDS(on)): 190 Ohms (at VGS = 10V)
- Total Gate Charge (Qg max): 84nC
- Gate-Source Charge (Qgs): 59nC
- Gate-Drain Charge (Qgd): 135nC
Features
- RoHS-compliant
- Single configuration
- Lead (Pb)-free package available
Applications
This product is suitable for various applications in electronics and power
systems.
Thermal Resistance Ratings
- Maximum Junction-to-Ambient: 40°C/W
- Case-to-Sink, flat, greased surface: 0.26°C/W
- Maximum Junction-to-Case: 0.24°C/W
Datasheet Notes
For detailed technical questions and updated information, contact Vishay at
hvm@vishay.com .
Product Usage Instructions
Static Parameters
Ensure the following parameters are within the specified range for optimal
performance:
- Drain-Source Breakdown Voltage: Above 500V
- Gate-Source Threshold Voltage: Between 3.0V and 5.0V
- Zero Gate Voltage Drain Current: Less than 50A
Dynamic Parameters
Consider the dynamic parameters for efficient operation:
- Input Capacitance: 5280pF
- Output Capacitance: 5630pF
Frequently Asked Questions (FAQ)
Q: Is this product RoHS-compliant?
A: Yes, this product is available in RoHS-compliant versions. Refer to the
datasheet for details.
IRFP32N50K Vishay Siliconix
www.vishay.com
Power MOSFET
PRODUCT SUMMARY
VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.135
Qg (max.) (nC)| 190
Qgs (nC)| 59
Qgd (nC)| 84
Configuration| Single
FEATURES
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/d t ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
- Low RDS(on)
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
APPLICATIONS
- Switch mode power supply (SMPS)
- Uninterruptible power supply
- High speed power switching
- Hard switching and high frequency circuits
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| IRFP32N50KPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 32| A
TC = 100 °C| 20
Pulsed drain Current a| IDM| 130
Linear derating factor| | 3.7| W/°C
Single pulse avalanche energy b| EAS| 450| mJ
Repetitive avalanche current a| IAR| 32| A
Repetitive avalanche energy a| EAR| 46| mJ
Maximum power dissipation| TC = 25 °C| PD| 460| W
Peak diode recovery dV/dt c| dV/dt| 13| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| for 10 s| | 300d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- Repetitive rating; pulse width limited by maximum junction temperature
- Starting TJ = 25 °C, L = 0.87 mH, Rg = 25 Ω, IAS = 32 A
- ISD ≤ 32 A, dI/dt ≤ 197 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.26
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.54|
–| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 50| μA
VDS = 400 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 32 A b| –| 0.135|
0.16| W
Forward transconductance| gfs| VDS = 50 V, ID = 32 A| 14| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 5280| –|
pF
Output capacitance| Coss| –| 550| –
Reverse transfer capacitance| Crss| –| 45| –
Output capacitance| Coss|
VGS = 0 V
| VDS = 1.0 V, f = 1.0 MHz| –| 5630| –
VDS = 400 V, f = 1.0 MHz| –| 155| –
Effective output capacitance| Coss eff.| VDS = 0 V to 400 V c| –| 265| –
Total Gate charge| Qg|
VGS = 10 V
|
ID = 32 A, VDS = 400 V b
| –| –| 190|
nC
Gate-source charge| Qgs| –| –| 59
Gate-drain charge| Qgd| –| –| 84
Turn-on delay time| td(on)|
VDD = 250 V, ID = 32 A, Rg = 4.3 W, VGS = 10 V b
| –| 28| –|
ns
Rise time| tr| –| 120| –
Turn-off delay time| td(off)| –| 48| –
Fall time| tf| –| 54| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
showing the
integral reverse
p – n junction diode
| –| –| 32|
A
Pulsed diode forward current a
|
ISM
|
–
|
–
|
130
Body diode voltage| VSD| TJ = 25 °C, IS = 32 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr|
TJ = 25 °C, IF = 32 A, dI/dt = 100 A/μs b
| –| 530| 800| ns
Body diode reverse recovery charge| Qrr| –| 9.0| 13.5| μC
Reverse recovery current| IRRM| –| 30| –| A
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature
- Pulse width ≤ 400 μs; duty cycle ≤ 2 %
- Cosseff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Package Information
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|
Notes
- Package reference: JEDEC® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b 4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Legal Disclaimer Notice
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References
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