VISHAY IRFR210 Power MOSFET Owner’s Manual

VISHAY IRFR210 Power MOSFET

Product Information

• Product Name: IRFR210, IRFU210, SiHFR210, SiHFU210
• Manufacturer: Vishay Siliconix
• Product Type: Power MOSFET
• Package Types: DPAK (TO-252), IPAK (TO-251)

Features:

• Fast switching
• Ruggedized device design
• Low on-resistance
• Cost-effectiveness

Description:

The IRFR210, IRFU210, SiHFR210, SiHFU210 are third-generation power MOSFETs from Vishay Siliconix. They are designed to provide a combination of fast switching, ruggedized device design, low on-resistance, and cost- effectiveness. The DPAK package is suitable for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is designed for through-hole mounting applications. These MOSFETs can handle power dissipation levels up to 1.5 W in typical surface mount applications.

Thermal Resistance Ratings:

• Maximum junction-to-ambient: 110 °C/W
• Maximum junction-to-ambient (PCB mount): 50 °C/W
• Maximum junction-to-case (drain): 5.0 °C/W

Product Usage Instructions

To use the IRFR210, IRFU210, SiHFR210, SiHFU210 Power MOSFETs, follow these instructions:

1. Select the appropriate package type (DPAK or IPAK) based on your mounting requirements.
2. Ensure that the device is lead (Pb)-free and halogen-free if required.
3. Refer to the ordering information section to select the specific part number based on your needs.
4. Take note of the device orientation if specified in the ordering information.
5. Consider the maximum ratings and limitations provided in the parameter section when designing your circuit.
6. Follow the recommended thermal resistance ratings when mounting the MOSFET on a PCB.
7. Refer to the technical questions contact provided for any further assistance or inquiries.

Note : This product documentation is subject to change without notice. For detailed disclaimers and specific information, please refer to the official documentation available at www.vishay.com/doc?91000.

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR210, SiHFR210)
• Straight lead (IRFU210, SiHFU210)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

PACKAGE| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK (TO-251)
---|---|---|---|---|---
Lead (Pb)-free and halogen-free| SiHFR210-GE3| SiHFR210TRL-GE3 a| –| SiHFR210TRR-GE3 a| SiHFU210-GE3
Lead (Pb)-free| IRFR210PbF| IRFR210TRLPbF a| IRFR210TRPbF a| IRFR210TRRPbF| IRFU210PbF
Lead (Pb)-free and halogen-free| IRFR210PbF-BE3 ab| IRFR210TRLPbF-BE3 ab| IRFR210TRPbF-BE3 ab| –| –

Notes

• See device orientation
• “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS

A

TC = 100 °C| 1.7
Pulsed drain current a| IDM| 10
Linear derating factor|  | 0.20| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche Energy b| EAS| 95| mJ
Avalanche current a| IAR| 2.7| A
Repetitive avalanche energy a| EAR| 2.5| mJ
Maximum power dissipation| TC = 25 °C| PD| 25| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)d| for 10 s|  | 260

(TC = 25 °C, unless otherwise noted)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 50 V, starting TJ = 25 °C, L = 28 mH, Rg = 25 Ω, IAS = 2.6 A (see fig. 12)
• ISD ≤ 2.6 A, dI/dt ≤ 70 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case
• When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 5.0

Note
When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 200| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.30| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 200 V, VGS = 0 V| –| –| 25| μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 1.6 A b| –| –| 1.5| Ù
Forward transconductance| gfs| VDS = 50 V, ID = 1.6 A b| 0.80| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 140| –|

pF

Output capacitance| Coss| –| 53| –
Reverse transfer capacitance| Crss| –| 15| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 3.3 A, VDS = 160 V,

see fig. 6 and 13 b

| –| –| 8.2|

nC

Gate-source charge| Qgs| –| –| 1.8
Gate-drain charge| Qgd| –| –| 4.5
Turn-on delay time| td(on)|

VDD = 100 V, ID = 3.3 A,

Rg = 24 Ù, RD = 30 Ù, see fig. 10 b

| –| 8.2| –|

ns

Rise time| tr| –| 17| –
Turn-off delay time| td(off)| –| 14| –
Fall time| tf| –| 8.9| –
Internal drain inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact| –| 4.5| –|

nH

Internal source inductance

|

LS

|

–

|

7.5

|

–

Drain-source body diode characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the

integral reverse  p – n junction diode

| –| –| 2.6|

A

Pulsed diode forward current a| ISM|

–

|

–

|

10

Body diode voltage| VSD| TJ = 25 °C, IS = 2.6 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b| –| 150| 310| ns
Body diode reverse recovery charge| Qrr| –| 0.60| 1.4| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91268

Case Outline

VERSION 1: FACILITY CODE = Y

Note
Dimension L3 is for reference only

VERSION 2: FACILITY CODE = N

Notes

• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional

RECOMMENDED MINIMUM PADS FOR DPAK

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
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References

• applications.no
• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFR210, IRFU210, SiHFR210, SiHFU210 MOSFETs | Vishay
• IRFR210, IRFU210, SiHFR210, SiHFU210 MOSFETs | Vishay

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